BSS138LT3
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onsemi BSS138LT3

Manufacturer No:
BSS138LT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSS138LT3 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi. This device is fabricated using onsemi’s proprietary high cell density DMOS technology, designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS - - 50 Vdc
Gate-to-Source Voltage - Continuous VGS - - ±20 Vdc
Drain Current - Continuous ID - - 200 mA
Pulsed Drain Current (tp ≤ 10 μs) IDM - - 800 mA
Total Power Dissipation @ TA = 25°C PD - - 225 mW
Operating and Storage Temperature Range TJ, Tstg -55 - 150 °C
Thermal Resistance, Junction-to-Ambient RθJA - - 556 °C/W
On-State Resistance @ VGS = 10 V, ID = 0.22 A RDS(on) 0.7 3.5 - Ω
On-State Resistance @ VGS = 4.5 V, ID = 0.22 A RDS(on) 1.0 6.0 - Ω
Gate Threshold Voltage VGS(th) 0.8 1.3 1.5 V

Key Features

  • High density cell design for extremely low RDS(on)
  • Rugged and reliable performance
  • Compact industry standard SOT-23 surface mount package
  • Pb-free and halogen-free, RoHS compliant
  • Low threshold voltage (VGS(th): 0.85 V - 1.5 V) ideal for low voltage applications
  • Fast switching performance
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications

Applications

The BSS138LT3 is suitable for a variety of low voltage, low current applications, including:

  • Small servo motor control
  • Power MOSFET gate drivers
  • DC-DC converters
  • Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones
  • Other switching applications

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the BSS138LT3?

    The maximum drain-to-source breakdown voltage is 50 Vdc.

  2. What is the continuous drain current rating of the BSS138LT3?

    The continuous drain current rating is 200 mA.

  3. What is the typical on-state resistance at VGS = 10 V and ID = 0.22 A?

    The typical on-state resistance is 3.5 Ω.

  4. What is the gate threshold voltage range of the BSS138LT3?

    The gate threshold voltage range is 0.8 V to 1.5 V).

  5. Is the BSS138LT3 RoHS compliant?
  6. What is the thermal resistance, junction-to-ambient, of the BSS138LT3?

    The thermal resistance, junction-to-ambient, is 556 °C/W).

  7. What are the typical applications of the BSS138LT3?

    Typical applications include small servo motor control, power MOSFET gate drivers, DC-DC converters, and power management in portable and battery-powered products).

  8. What is the package type of the BSS138LT3?

    The package type is SOT-23 (TO-236)).

  9. Is the BSS138LT3 suitable for automotive applications?
  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C for 10 seconds).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS138LT3G
BSS138LT3G
MOSFET N-CH 50V 200MA SOT23-3
BVSS138LT1G
BVSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
BSS138LT3
BSS138LT3
MOSFET N-CH 50V 200MA SOT23-3

Similar Products

Part Number BSS138LT3 BSS138LT3G BSS138LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V -
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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