BSS138LT1
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onsemi BSS138LT1

Manufacturer No:
BSS138LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 50V 200MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138LT1 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. The BSS138LT1 is particularly suited for low voltage and low current applications, making it an ideal choice for various electronic systems.

Key Specifications

Parameter Unit Min Typ Max Test Conditions
Drain-Source Voltage (VDS) V - - 50 -
Gate-Source Voltage (VGS) V - - 20 -
Gate Threshold Voltage (VGS(th)) V 0.85 - 1.5 VDS = VGS, ID = 1 mA
Static Drain-Source On-Resistance (RDS(on)) Ω - 3.5 6.0 VGS = 10 V, ID = 0.22 A
On-State Drain Current (ID(on)) A - - 0.22 VGS = 10 V, VDS = 5 V
Input Capacitance (Ciss) pF - 27 - VDS = 25 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance (Coss) pF - 13 - VDS = 25 V, VGS = 0 V, f = 1.0 MHz
Reverse Transfer Capacitance (Crss) pF - 6 - VDS = 25 V, VGS = 0 V, f = 1.0 MHz

Key Features

  • Low Threshold Voltage: The BSS138LT1 has a low gate threshold voltage (VGS(th): 0.85 V - 1.5 V), making it ideal for low voltage applications.
  • Miniature SOT-23 Package: The device is packaged in a compact SOT-23 surface mount package, which saves board space.
  • High Reliability: The device is HBM Class 0A, MM Class M1A, and CDM Class IV qualified, ensuring high reliability in various applications.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and Halogen-Free: The device is lead-free and halogen-free, complying with environmental regulations.

Applications

  • DC-DC Converters: The BSS138LT1 is commonly used in DC-DC converters due to its low on-state resistance and fast switching capabilities.
  • Power Management in Portable Devices: It is used in power management circuits for portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
  • Small Servo Motor Control: Suitable for controlling small servo motors due to its low voltage and low current handling capabilities.
  • Power MOSFET Gate Drivers: Often used as gate drivers for power MOSFETs in various switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138LT1?

    The maximum drain-source voltage (VDS) of the BSS138LT1 is 50 V.

  2. What is the typical on-state resistance (RDS(on)) of the BSS138LT1?

    The typical on-state resistance (RDS(on)) of the BSS138LT1 is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138LT1?

    The gate threshold voltage (VGS(th)) range of the BSS138LT1 is 0.85 V to 1.5 V.

  4. What package type is the BSS138LT1 available in?

    The BSS138LT1 is available in a miniature SOT-23 surface mount package.

  5. Is the BSS138LT1 AEC-Q101 qualified?

    Yes, the BSS138LT1 is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

  6. What are some common applications of the BSS138LT1?

    The BSS138LT1 is commonly used in DC-DC converters, power management in portable devices, small servo motor control, and as power MOSFET gate drivers.

  7. Is the BSS138LT1 Pb-free and halogen-free?

    Yes, the BSS138LT1 is lead-free and halogen-free, complying with environmental regulations.

  8. What is the input capacitance (Ciss) of the BSS138LT1?

    The input capacitance (Ciss) of the BSS138LT1 is typically 27 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz.

  9. What is the turn-on delay time (td(on)) of the BSS138LT1?

    The turn-on delay time (td(on)) of the BSS138LT1 is typically 2.5 ns to 5 ns at VDD = 30 V, ID = 0.29 A, and VGS = 10 V.

  10. What is the maximum on-state drain current (ID(on)) of the BSS138LT1?

    The maximum on-state drain current (ID(on)) of the BSS138LT1 is 0.22 A at VGS = 10 V and VDS = 5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS138LT1 BSS138LT1G BSS138LT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 5V 5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 225mW (Ta) 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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