2N7002BKM,315
  • Share:

Nexperia USA Inc. 2N7002BKM,315

Manufacturer No:
2N7002BKM,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 450MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKM,315 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS™ series, known for its advanced technology and reliability. It is designed for surface mount applications and is packaged in the SOT-883 (SC-101) package. The MOSFET is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. With its robust specifications and compact package, it is an ideal choice for a variety of electronic circuits requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Manufacturer Part Number 2N7002BKM,315
Manufacturer Nexperia USA Inc.
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 450 mA
Drive Voltage (Max Rds On, Min Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 360 mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-883
RoHS Status ROHS3 Compliant

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other demanding environments.
  • High Drain to Source Voltage: 60V, making it robust for various applications.
  • Continuous Drain Current: 450mA at 25°C, ensuring high current handling capability.
  • Low On-Resistance: Rds On (Max) of 1.6 Ohm @ 500mA, 10V, enhancing efficiency.
  • Compact Package: SOT-883 (SC-101) package, ideal for space-constrained designs.
  • High Operating Temperature: Up to 150°C (TJ), suitable for high-temperature applications.
  • Low Gate Charge: 0.6 nC @ 4.5 V, reducing switching losses.
  • ROHS3 Compliant: Environmentally friendly and compliant with RoHS regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Power Management: Used in power management circuits requiring high efficiency and reliability.
  • Industrial Control: Ideal for industrial control systems, motor control, and power switching applications.
  • Consumer Electronics: Can be used in consumer electronics for power switching and voltage regulation.
  • Medical Devices: Suitable for medical devices requiring high reliability and low power consumption.

Q & A

  1. What is the drain to source voltage (Vdss) of the 2N7002BKM,315 MOSFET?

    The drain to source voltage (Vdss) of the 2N7002BKM,315 MOSFET is 60V.

  2. What is the continuous drain current (Id) of the 2N7002BKM,315 at 25°C?

    The continuous drain current (Id) of the 2N7002BKM,315 at 25°C is 450mA.

  3. What is the maximum on-resistance (Rds On) of the 2N7002BKM,315?

    The maximum on-resistance (Rds On) of the 2N7002BKM,315 is 1.6 Ohm @ 500mA, 10V.

  4. What is the gate-source threshold voltage (Vgs(th)) of the 2N7002BKM,315?

    The gate-source threshold voltage (Vgs(th)) of the 2N7002BKM,315 is 2.1V @ 250µA.

  5. What is the maximum gate-source voltage (Vgs) of the 2N7002BKM,315?

    The maximum gate-source voltage (Vgs) of the 2N7002BKM,315 is ±20V.

  6. What is the operating temperature range of the 2N7002BKM,315?

    The operating temperature range of the 2N7002BKM,315 is up to 150°C (TJ).

  7. Is the 2N7002BKM,315 RoHS compliant?

    Yes, the 2N7002BKM,315 is ROHS3 compliant.

  8. What package type does the 2N7002BKM,315 come in?

    The 2N7002BKM,315 comes in the SOT-883 (SC-101) package.

  9. What is the power dissipation (Pd) of the 2N7002BKM,315?

    The power dissipation (Pd) of the 2N7002BKM,315 is 360mW (Ta).

  10. Is the 2N7002BKM,315 suitable for automotive applications?

    Yes, the 2N7002BKM,315 is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

-
526

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002BKM,315 2N7002BKM315 2N7002BKMB,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-883 SOT-883 DFN1006B-3
Package / Case SC-101, SOT-883 SC-101, SOT-883 3-XFDFN

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP