2N7002BKM,315
  • Share:

Nexperia USA Inc. 2N7002BKM,315

Manufacturer No:
2N7002BKM,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 450MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKM,315 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS™ series, known for its advanced technology and reliability. It is designed for surface mount applications and is packaged in the SOT-883 (SC-101) package. The MOSFET is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. With its robust specifications and compact package, it is an ideal choice for a variety of electronic circuits requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Manufacturer Part Number 2N7002BKM,315
Manufacturer Nexperia USA Inc.
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 450 mA
Drive Voltage (Max Rds On, Min Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 360 mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-883
RoHS Status ROHS3 Compliant

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other demanding environments.
  • High Drain to Source Voltage: 60V, making it robust for various applications.
  • Continuous Drain Current: 450mA at 25°C, ensuring high current handling capability.
  • Low On-Resistance: Rds On (Max) of 1.6 Ohm @ 500mA, 10V, enhancing efficiency.
  • Compact Package: SOT-883 (SC-101) package, ideal for space-constrained designs.
  • High Operating Temperature: Up to 150°C (TJ), suitable for high-temperature applications.
  • Low Gate Charge: 0.6 nC @ 4.5 V, reducing switching losses.
  • ROHS3 Compliant: Environmentally friendly and compliant with RoHS regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Power Management: Used in power management circuits requiring high efficiency and reliability.
  • Industrial Control: Ideal for industrial control systems, motor control, and power switching applications.
  • Consumer Electronics: Can be used in consumer electronics for power switching and voltage regulation.
  • Medical Devices: Suitable for medical devices requiring high reliability and low power consumption.

Q & A

  1. What is the drain to source voltage (Vdss) of the 2N7002BKM,315 MOSFET?

    The drain to source voltage (Vdss) of the 2N7002BKM,315 MOSFET is 60V.

  2. What is the continuous drain current (Id) of the 2N7002BKM,315 at 25°C?

    The continuous drain current (Id) of the 2N7002BKM,315 at 25°C is 450mA.

  3. What is the maximum on-resistance (Rds On) of the 2N7002BKM,315?

    The maximum on-resistance (Rds On) of the 2N7002BKM,315 is 1.6 Ohm @ 500mA, 10V.

  4. What is the gate-source threshold voltage (Vgs(th)) of the 2N7002BKM,315?

    The gate-source threshold voltage (Vgs(th)) of the 2N7002BKM,315 is 2.1V @ 250µA.

  5. What is the maximum gate-source voltage (Vgs) of the 2N7002BKM,315?

    The maximum gate-source voltage (Vgs) of the 2N7002BKM,315 is ±20V.

  6. What is the operating temperature range of the 2N7002BKM,315?

    The operating temperature range of the 2N7002BKM,315 is up to 150°C (TJ).

  7. Is the 2N7002BKM,315 RoHS compliant?

    Yes, the 2N7002BKM,315 is ROHS3 compliant.

  8. What package type does the 2N7002BKM,315 come in?

    The 2N7002BKM,315 comes in the SOT-883 (SC-101) package.

  9. What is the power dissipation (Pd) of the 2N7002BKM,315?

    The power dissipation (Pd) of the 2N7002BKM,315 is 360mW (Ta).

  10. Is the 2N7002BKM,315 suitable for automotive applications?

    Yes, the 2N7002BKM,315 is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

-
526

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002BKM,315 2N7002BKM315 2N7002BKMB,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-883 SOT-883 DFN1006B-3
Package / Case SC-101, SOT-883 SC-101, SOT-883 3-XFDFN

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BC857CQAZ
BC857CQAZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO