2N7002BKMB,315
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Nexperia USA Inc. 2N7002BKMB,315

Manufacturer No:
2N7002BKMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 450MA DFN1006B-3
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002BKMB,315 is a 60 V, 350 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This device is part of the enhancement mode Field-Effect Transistor (FET) family and is packaged in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. The 2N7002BKMB,315 is designed using Trench MOSFET technology, which offers high performance and reliability in various electronic applications.

Key Specifications

Parameter Value
Drain-Source Voltage (Vds) 60 V
Drain Current (Id) 350 mA
Gate-Source Voltage (Vgs) -20 V to +20 V
Gate Threshold Voltage (Vgs(th)) 1.1 V to 2.1 V
Package Type SOT23 (TO-236AB)
Operating Temperature -55°C to +150°C
ESD Protection Up to 2 kV
Qualification AEC-Q101 qualified

Key Features

  • Logic-level compatible, allowing easy drive by low voltage devices
  • Very fast switching due to Trench MOSFET technology
  • ESD protection up to 2 kV for enhanced reliability
  • AEC-Q101 qualified, suitable for automotive applications
  • Compact SOT23 package for space-efficient designs
  • High current density and excellent thermal stability

Applications

  • General-purpose switching and amplification
  • Low-voltage logic level conversion
  • High-frequency amplification and power management solutions
  • Relay drivers and motor drivers
  • High-speed switching circuits
  • Load control and power management in portable electronics and battery-powered devices

Q & A

  1. What is the maximum drain-source voltage of the 2N7002BKMB,315?

    The maximum drain-source voltage is 60 V.

  2. What is the maximum drain current of the 2N7002BKMB,315?

    The maximum drain current is 350 mA.

  3. What is the gate-source voltage range for the 2N7002BKMB,315?

    The gate-source voltage range is -20 V to +20 V.

  4. What is the gate threshold voltage range for the 2N7002BKMB,315?

    The gate threshold voltage range is 1.1 V to 2.1 V.

  5. What type of package does the 2N7002BKMB,315 use?

    The 2N7002BKMB,315 is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  6. Is the 2N7002BKMB,315 AEC-Q101 qualified?

    Yes, the 2N7002BKMB,315 is AEC-Q101 qualified, making it suitable for automotive applications.

  7. What is the ESD protection level of the 2N7002BKMB,315?

    The 2N7002BKMB,315 has ESD protection up to 2 kV.

  8. What are some common applications of the 2N7002BKMB,315?

    Common applications include general-purpose switching, low-voltage logic level conversion, high-frequency amplification, relay drivers, motor drivers, and high-speed switching circuits.

  9. What is the operating temperature range of the 2N7002BKMB,315?

    The operating temperature range is -55°C to +150°C.

  10. Why is the 2N7002BKMB,315 preferred in modern electronic systems?

    The 2N7002BKMB,315 is preferred due to its excellent thermal stability, high current density, and reliable performance, making it an ideal choice for modern electronic systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
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Similar Products

Part Number 2N7002BKMB,315 2N7002BKM,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 450mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883
Package / Case 3-XFDFN SC-101, SOT-883

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