Overview
The SCTWA30N120 is a high-performance silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device is designed to operate at high voltages and currents, making it suitable for a variety of power electronics applications. The SCTWA30N120 features a drain-source voltage of 1200 V and a continuous drain current of 45 A, with a typical on-resistance of 90 mOhm at a junction temperature of 150°C. It is packaged in an HiP247 long leads package, which provides excellent thermal and electrical performance.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 1200 V |
| Continuous Drain Current (Id) | 45 A |
| Pulsed Drain Current (Idp) | 90 A |
| Typical On-Resistance (Rds(on)) at TJ = 150°C | 90 mOhm |
| Power Dissipation (Pd) | 270 W |
| Package | HiP247 long leads |
Key Features
- High voltage rating of 1200 V, suitable for high-power applications.
- High continuous drain current of 45 A and pulsed drain current of 90 A.
- Low on-resistance of 90 mOhm at TJ = 150°C, reducing power losses.
- HiP247 long leads package for improved thermal and electrical performance.
- Silicon carbide technology offering superior efficiency and reliability compared to traditional silicon devices.
Applications
- Power supplies and DC-DC converters.
- Motor drives and control systems.
- Renewable energy systems, such as solar and wind power inverters.
- Electric vehicle charging infrastructure and onboard chargers.
- Industrial power systems, including UPS and power factor correction (PFC) circuits.
Q & A
- What is the maximum drain-source voltage of the SCTWA30N120?
The maximum drain-source voltage is 1200 V. - What is the continuous drain current rating of the SCTWA30N120?
The continuous drain current rating is 45 A. - What is the typical on-resistance of the SCTWA30N120 at TJ = 150°C?
The typical on-resistance is 90 mOhm. - In what package is the SCTWA30N120 available?
The SCTWA30N120 is available in an HiP247 long leads package. - What are the benefits of using silicon carbide technology in the SCTWA30N120?
Silicon carbide technology offers superior efficiency, higher switching frequencies, and improved reliability compared to traditional silicon devices. - What are some typical applications for the SCTWA30N120?
Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and industrial power systems. - What is the power dissipation rating of the SCTWA30N120?
The power dissipation rating is 270 W. - Can the SCTWA30N120 be used in high-temperature environments?
Yes, the device is rated for operation at high junction temperatures, making it suitable for high-temperature environments. - How does the SCTWA30N120 compare to other STMicroelectronics SiC MOSFETs?
The SCTWA30N120 offers a balance of high voltage, current, and low on-resistance, making it a versatile option within STMicroelectronics' range of SiC MOSFETs. - Where can I find detailed datasheets and technical documentation for the SCTWA30N120?
Detailed datasheets and technical documentation can be found on the STMicroelectronics official website and through authorized distributors.
