Overview
The SCTWA50N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device leverages the advanced properties of wide bandgap materials, resulting in unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SiC material used in this MOSFET offers outstanding thermal properties, allowing for high-efficiency and high power density applications within an industry-standard package outline.
Key Specifications
Symbol | Parameter | Value | Unit |
---|---|---|---|
VDS | Drain-source voltage | 1200 | V |
VGS | Gate-source voltage | -10 to 25 | V |
ID | Drain current (continuous) at TC = 25 °C | 65 | A |
ID | Drain current (continuous) at TC = 100 °C | 50 | A |
IDM | Drain current (pulsed) | 130 | A |
PTOT | Total dissipation at TC = 25 °C | 318 | W |
Tstg | Storage temperature range | -55 to 200 | °C |
Tj | Operating junction temperature range | -55 to 200 | °C |
RDS(on) | Static drain-source on-resistance | 59 mΩ (typ., TJ = 150 °C) | mΩ |
Rthj-case | Thermal resistance junction-case | 0.55 | °C/W |
Rthj-amb | Thermal resistance junction-ambient | 40 | °C/W |
Key Features
- Very tight variation of on-resistance vs. temperature.
- Very high operating junction temperature capability (TJ = 200 °C).
- Very fast and robust intrinsic body diode.
- Low capacitance.
- Excellent switching performance almost independent of temperature.
- Outstanding thermal properties of the SiC material.
Applications
- Solar inverters.
- UPS (Uninterruptible Power Supplies).
- Motor drives.
- High voltage DC-DC converters.
- Switch mode power supplies.
Q & A
- What is the maximum drain-source voltage of the SCTWA50N120?
The maximum drain-source voltage is 1200 V.
- What is the continuous drain current at 25 °C and 100 °C?
The continuous drain current is 65 A at 25 °C and 50 A at 100 °C.
- What is the typical on-resistance at TJ = 150 °C?
The typical on-resistance at TJ = 150 °C is 59 mΩ.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 200 °C.
- What are the key applications of the SCTWA50N120?
The key applications include solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.
- What package type is the SCTWA50N120 available in?
The SCTWA50N120 is available in the HiP247™ long leads package.
- What is the thermal resistance junction-case of the SCTWA50N120?
The thermal resistance junction-case is 0.55 °C/W.
- What is the storage temperature range for the SCTWA50N120?
The storage temperature range is -55 to 200 °C.
- What is the total dissipation at TC = 25 °C?
The total dissipation at TC = 25 °C is 318 W.
- Does the SCTWA50N120 have a robust intrinsic body diode?
Yes, the SCTWA50N120 has a very fast and robust intrinsic body diode.