SCTWA50N120
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STMicroelectronics SCTWA50N120

Manufacturer No:
SCTWA50N120
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 1200V 65A HIP247
Delivery:
Payment:
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Product Introduction

Overview

The SCTWA50N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device leverages the advanced properties of wide bandgap materials, resulting in unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SiC material used in this MOSFET offers outstanding thermal properties, allowing for high-efficiency and high power density applications within an industry-standard package outline.

Key Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage 1200 V
VGS Gate-source voltage -10 to 25 V
ID Drain current (continuous) at TC = 25 °C 65 A
ID Drain current (continuous) at TC = 100 °C 50 A
IDM Drain current (pulsed) 130 A
PTOT Total dissipation at TC = 25 °C 318 W
Tstg Storage temperature range -55 to 200 °C
Tj Operating junction temperature range -55 to 200 °C
RDS(on) Static drain-source on-resistance 59 mΩ (typ., TJ = 150 °C)
Rthj-case Thermal resistance junction-case 0.55 °C/W
Rthj-amb Thermal resistance junction-ambient 40 °C/W

Key Features

  • Very tight variation of on-resistance vs. temperature.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.
  • Excellent switching performance almost independent of temperature.
  • Outstanding thermal properties of the SiC material.

Applications

  • Solar inverters.
  • UPS (Uninterruptible Power Supplies).
  • Motor drives.
  • High voltage DC-DC converters.
  • Switch mode power supplies.

Q & A

  1. What is the maximum drain-source voltage of the SCTWA50N120?

    The maximum drain-source voltage is 1200 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 65 A at 25 °C and 50 A at 100 °C.

  3. What is the typical on-resistance at TJ = 150 °C?

    The typical on-resistance at TJ = 150 °C is 59 mΩ.

  4. What is the maximum operating junction temperature?

    The maximum operating junction temperature is 200 °C.

  5. What are the key applications of the SCTWA50N120?

    The key applications include solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.

  6. What package type is the SCTWA50N120 available in?

    The SCTWA50N120 is available in the HiP247™ long leads package.

  7. What is the thermal resistance junction-case of the SCTWA50N120?

    The thermal resistance junction-case is 0.55 °C/W.

  8. What is the storage temperature range for the SCTWA50N120?

    The storage temperature range is -55 to 200 °C.

  9. What is the total dissipation at TC = 25 °C?

    The total dissipation at TC = 25 °C is 318 W.

  10. Does the SCTWA50N120 have a robust intrinsic body diode?

    Yes, the SCTWA50N120 has a very fast and robust intrinsic body diode.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):318W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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$37.80
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Similar Products

Part Number SCTWA50N120 SCTWA10N120 SCTWA20N120 SCTWA30N120
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 12A (Tc) 20A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V 690mOhm @ 6A, 20V 239mOhm @ 10A, 20V 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA 3.5V @ 250µA (Typ) 3.5V @ 1mA (Typ) 3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V 21 nC @ 20 V 45 nC @ 20 V 105 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V 300 pF @ 1000 V 650 pF @ 400 V 1700 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 318W (Tc) 110W (Tc) 175W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package HiP247™ HiP247™ Long Leads HiP247™ Long Leads HiP247™ Long Leads
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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