FQD2N90TM
  • Share:

onsemi FQD2N90TM

Manufacturer No:
FQD2N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 1.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N90TM is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. With its robust specifications and features, it is well-suited for demanding environments that require high voltage and current handling capabilities.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)900 V
Continuous Drain Current (Id)1.7 A
Maximum Drain Current (Idm)6.8 A
Power Dissipation (Pd)50 W
Package TypeTO-252 (DPAK)

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Continuous drain current of 1.7 A and maximum drain current of 6.8 A.
  • Low on-resistance, enhancing efficiency in power management.
  • Robust DPAK (TO-252) package for reliable thermal performance.
  • High power dissipation capability of 50 W.

Applications

The FQD2N90TM is suitable for a variety of applications, including:

  • Switched mode power supplies.
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.
  • Other high-voltage power management systems.

Q & A

  1. What is the drain-source voltage rating of the FQD2N90TM?
    The drain-source voltage rating is 900 V.
  2. What is the continuous drain current of the FQD2N90TM?
    The continuous drain current is 1.7 A.
  3. What is the maximum drain current of the FQD2N90TM?
    The maximum drain current is 6.8 A.
  4. What package type does the FQD2N90TM use?
    The FQD2N90TM uses the TO-252 (DPAK) package.
  5. What are some common applications for the FQD2N90TM?
    Common applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the power dissipation capability of the FQD2N90TM?
    The power dissipation capability is 50 W.
  7. Why is the FQD2N90TM suitable for high-voltage applications?
    The FQD2N90TM is suitable due to its high voltage rating and robust specifications.
  8. What is the transistor polarity of the FQD2N90TM?
    The transistor polarity is N Channel.
  9. Where can I find detailed specifications for the FQD2N90TM?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Newark, and TME.
  10. Is the FQD2N90TM available in stock?
    Yes, the FQD2N90TM is available in stock from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.35
12

Please send RFQ , we will respond immediately.

Same Series
FQU2N90TU
FQU2N90TU
MOSFET N-CH 900V 1.7A IPAK
FQD2N90TF
FQD2N90TF
MOSFET N-CH 900V 1.7A DPAK

Similar Products

Part Number FQD2N90TM FQD2N30TM FQD2N40TM FQD2N50TM FQD2N60TM FQD2N80TM FQD2N90TF
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 300 V 400 V 500 V 600 V 800 V 900 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc) 1.4A (Tc) 1.6A (Tc) 2A (Tc) 1.8A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 850mA, 10V 3.7Ohm @ 850mA, 10V 5.8Ohm @ 700mA, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V 6.3Ohm @ 900mA, 10V 7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC