FQD2N90TM
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onsemi FQD2N90TM

Manufacturer No:
FQD2N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 1.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N90TM is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. With its robust specifications and features, it is well-suited for demanding environments that require high voltage and current handling capabilities.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)900 V
Continuous Drain Current (Id)1.7 A
Maximum Drain Current (Idm)6.8 A
Power Dissipation (Pd)50 W
Package TypeTO-252 (DPAK)

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Continuous drain current of 1.7 A and maximum drain current of 6.8 A.
  • Low on-resistance, enhancing efficiency in power management.
  • Robust DPAK (TO-252) package for reliable thermal performance.
  • High power dissipation capability of 50 W.

Applications

The FQD2N90TM is suitable for a variety of applications, including:

  • Switched mode power supplies.
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.
  • Other high-voltage power management systems.

Q & A

  1. What is the drain-source voltage rating of the FQD2N90TM?
    The drain-source voltage rating is 900 V.
  2. What is the continuous drain current of the FQD2N90TM?
    The continuous drain current is 1.7 A.
  3. What is the maximum drain current of the FQD2N90TM?
    The maximum drain current is 6.8 A.
  4. What package type does the FQD2N90TM use?
    The FQD2N90TM uses the TO-252 (DPAK) package.
  5. What are some common applications for the FQD2N90TM?
    Common applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the power dissipation capability of the FQD2N90TM?
    The power dissipation capability is 50 W.
  7. Why is the FQD2N90TM suitable for high-voltage applications?
    The FQD2N90TM is suitable due to its high voltage rating and robust specifications.
  8. What is the transistor polarity of the FQD2N90TM?
    The transistor polarity is N Channel.
  9. Where can I find detailed specifications for the FQD2N90TM?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Newark, and TME.
  10. Is the FQD2N90TM available in stock?
    Yes, the FQD2N90TM is available in stock from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQU2N90TU
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MOSFET N-CH 900V 1.7A IPAK
FQD2N90TF
FQD2N90TF
MOSFET N-CH 900V 1.7A DPAK

Similar Products

Part Number FQD2N90TM FQD2N30TM FQD2N40TM FQD2N50TM FQD2N60TM FQD2N80TM FQD2N90TF
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 300 V 400 V 500 V 600 V 800 V 900 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc) 1.4A (Tc) 1.6A (Tc) 2A (Tc) 1.8A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 850mA, 10V 3.7Ohm @ 850mA, 10V 5.8Ohm @ 700mA, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V 6.3Ohm @ 900mA, 10V 7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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