FQD2N90TM
  • Share:

onsemi FQD2N90TM

Manufacturer No:
FQD2N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 1.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N90TM is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. With its robust specifications and features, it is well-suited for demanding environments that require high voltage and current handling capabilities.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)900 V
Continuous Drain Current (Id)1.7 A
Maximum Drain Current (Idm)6.8 A
Power Dissipation (Pd)50 W
Package TypeTO-252 (DPAK)

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Continuous drain current of 1.7 A and maximum drain current of 6.8 A.
  • Low on-resistance, enhancing efficiency in power management.
  • Robust DPAK (TO-252) package for reliable thermal performance.
  • High power dissipation capability of 50 W.

Applications

The FQD2N90TM is suitable for a variety of applications, including:

  • Switched mode power supplies.
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.
  • Other high-voltage power management systems.

Q & A

  1. What is the drain-source voltage rating of the FQD2N90TM?
    The drain-source voltage rating is 900 V.
  2. What is the continuous drain current of the FQD2N90TM?
    The continuous drain current is 1.7 A.
  3. What is the maximum drain current of the FQD2N90TM?
    The maximum drain current is 6.8 A.
  4. What package type does the FQD2N90TM use?
    The FQD2N90TM uses the TO-252 (DPAK) package.
  5. What are some common applications for the FQD2N90TM?
    Common applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the power dissipation capability of the FQD2N90TM?
    The power dissipation capability is 50 W.
  7. Why is the FQD2N90TM suitable for high-voltage applications?
    The FQD2N90TM is suitable due to its high voltage rating and robust specifications.
  8. What is the transistor polarity of the FQD2N90TM?
    The transistor polarity is N Channel.
  9. Where can I find detailed specifications for the FQD2N90TM?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Newark, and TME.
  10. Is the FQD2N90TM available in stock?
    Yes, the FQD2N90TM is available in stock from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.35
12

Please send RFQ , we will respond immediately.

Same Series
FQU2N90TU
FQU2N90TU
MOSFET N-CH 900V 1.7A IPAK
FQD2N90TF
FQD2N90TF
MOSFET N-CH 900V 1.7A DPAK

Similar Products

Part Number FQD2N90TM FQD2N30TM FQD2N40TM FQD2N50TM FQD2N60TM FQD2N80TM FQD2N90TF
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 300 V 400 V 500 V 600 V 800 V 900 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc) 1.4A (Tc) 1.6A (Tc) 2A (Tc) 1.8A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 850mA, 10V 3.7Ohm @ 850mA, 10V 5.8Ohm @ 700mA, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V 6.3Ohm @ 900mA, 10V 7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK