FQD2N90TM
  • Share:

onsemi FQD2N90TM

Manufacturer No:
FQD2N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 1.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N90TM is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. With its robust specifications and features, it is well-suited for demanding environments that require high voltage and current handling capabilities.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)900 V
Continuous Drain Current (Id)1.7 A
Maximum Drain Current (Idm)6.8 A
Power Dissipation (Pd)50 W
Package TypeTO-252 (DPAK)

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Continuous drain current of 1.7 A and maximum drain current of 6.8 A.
  • Low on-resistance, enhancing efficiency in power management.
  • Robust DPAK (TO-252) package for reliable thermal performance.
  • High power dissipation capability of 50 W.

Applications

The FQD2N90TM is suitable for a variety of applications, including:

  • Switched mode power supplies.
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.
  • Other high-voltage power management systems.

Q & A

  1. What is the drain-source voltage rating of the FQD2N90TM?
    The drain-source voltage rating is 900 V.
  2. What is the continuous drain current of the FQD2N90TM?
    The continuous drain current is 1.7 A.
  3. What is the maximum drain current of the FQD2N90TM?
    The maximum drain current is 6.8 A.
  4. What package type does the FQD2N90TM use?
    The FQD2N90TM uses the TO-252 (DPAK) package.
  5. What are some common applications for the FQD2N90TM?
    Common applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the power dissipation capability of the FQD2N90TM?
    The power dissipation capability is 50 W.
  7. Why is the FQD2N90TM suitable for high-voltage applications?
    The FQD2N90TM is suitable due to its high voltage rating and robust specifications.
  8. What is the transistor polarity of the FQD2N90TM?
    The transistor polarity is N Channel.
  9. Where can I find detailed specifications for the FQD2N90TM?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Newark, and TME.
  10. Is the FQD2N90TM available in stock?
    Yes, the FQD2N90TM is available in stock from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.35
12

Please send RFQ , we will respond immediately.

Same Series
FQU2N90TU
FQU2N90TU
MOSFET N-CH 900V 1.7A IPAK
FQD2N90TF
FQD2N90TF
MOSFET N-CH 900V 1.7A DPAK

Similar Products

Part Number FQD2N90TM FQD2N30TM FQD2N40TM FQD2N50TM FQD2N60TM FQD2N80TM FQD2N90TF
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 300 V 400 V 500 V 600 V 800 V 900 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc) 1.4A (Tc) 1.6A (Tc) 2A (Tc) 1.8A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 850mA, 10V 3.7Ohm @ 850mA, 10V 5.8Ohm @ 700mA, 10V 5.3Ohm @ 800mA, 10V 4.7Ohm @ 1A, 10V 6.3Ohm @ 900mA, 10V 7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD