Overview
The FQD2N80TM is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is particularly suited for applications in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | - | - | 800 |
| Continuous Drain Current (ID) at TC = 25°C | A | - | - | 1.8 |
| Continuous Drain Current (ID) at TC = 100°C | A | - | - | 1.14 |
| Pulsed Drain Current (IDM) | A | - | - | 7.2 |
| Gate-Source Voltage (VGSS) | V | - | - | ±30 |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 0.9 A | Ω | - | 4.9 | 6.3 |
| Gate Threshold Voltage (VGS(th)) | V | 3.0 | - | 5.0 |
| Thermal Resistance, Junction to Case (RθJC) | °C/W | - | - | 2.5 |
| Thermal Resistance, Junction to Ambient (RθJA) with 1 in2 Pad of 2-oz Copper | °C/W | - | - | 50 |
| Power Dissipation (PD) at TA = 25°C | W | - | - | 2.5 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 | - | 150 |
Key Features
- High voltage rating of 800 V and continuous drain current of 1.8 A at TC = 25°C.
- Low on-state resistance (RDS(on)) of 6.3 Ω (Max.) at VGS = 10 V, ID = 0.9 A.
- Low gate charge (Typ. 12 nC) for efficient switching.
- Low Crss (Typ. 5.5 pF) for reduced switching losses.
- 100% Avalanche tested for reliability.
- RoHS compliant.
- High avalanche energy strength and superior switching performance.
Applications
- Switched mode power supplies.
- Active power factor correction (PFC).
- Electronic lamp ballasts.
- Lighting applications.
Q & A
- What is the maximum drain-source voltage of the FQD2N80TM MOSFET?
The maximum drain-source voltage (VDSS) is 800 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 1.8 A.
- What is the typical gate charge of the FQD2N80TM?
The typical gate charge is 12 nC.
- What is the maximum on-state resistance (RDS(on))?
The maximum on-state resistance (RDS(on)) is 6.3 Ω at VGS = 10 V, ID = 0.9 A.
- Is the FQD2N80TM RoHS compliant?
Yes, the FQD2N80TM is RoHS compliant.
- What are the typical applications of the FQD2N80TM MOSFET?
The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- What is the thermal resistance, junction to case (RθJC)?
The thermal resistance, junction to case (RθJC), is 2.5 °C/W.
- What is the operating and storage temperature range?
The operating and storage temperature range is -55°C to +150°C.
- What is the maximum power dissipation at TA = 25°C?
The maximum power dissipation (PD) at TA = 25°C is 2.5 W.
- What package type is the FQD2N80TM available in?
The FQD2N80TM is available in the TO-252 (D-PAK) package.
