FQD2N80TM_WS
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onsemi FQD2N80TM_WS

Manufacturer No:
FQD2N80TM_WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 1.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N80TM_WS is an N-Channel MOSFET produced by onsemi, designed for high-performance applications. Although this product is currently obsolete and no longer manufactured, it remains relevant for understanding advanced MOSFET technology. This device was particularly suited for applications requiring low on-state resistance and superior switching performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Current Rating (Id)1.8 A (Tc), 2.5 W (Ta), 50 W (Tc)
Package TypeTO-252AA (DPAK)
On-State Resistance (Rds(on))Reduced for high efficiency
Avalanche CapabilityHigh

Key Features

  • Advanced MOSFET technology with reduced on-state resistance for high efficiency.
  • Superior switching performance.
  • High avalanche capability.
  • Surface mount TO-252AA (DPAK) package for ease of integration.

Applications

  • Switched mode power supplies.
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.

Q & A

  1. What is the voltage rating of the FQD2N80TM_WS MOSFET?
    The voltage rating is 800 V.
  2. What is the current rating of the FQD2N80TM_WS MOSFET?
    The current rating is 1.8 A (Tc), with power ratings of 2.5 W (Ta) and 50 W (Tc).
  3. What package type does the FQD2N80TM_WS use?
    The package type is TO-252AA (DPAK).
  4. Is the FQD2N80TM_WS still in production?
    No, the FQD2N80TM_WS is obsolete and no longer manufactured.
  5. What are some alternative products for the FQD2N80TM_WS?
    Alternatives include the IRFR1N60ATRPBF from Vishay Siliconix.
  6. What are the key applications for the FQD2N80TM_WS?
    Key applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  7. What is the on-state resistance of the FQD2N80TM_WS?
    The on-state resistance is reduced for high efficiency.
  8. Does the FQD2N80TM_WS have high avalanche capability?
    Yes, it has high avalanche capability.
  9. What is the significance of the TO-252AA (DPAK) package?
    The TO-252AA (DPAK) package is a surface mount type, making it easy to integrate into various designs.
  10. Where can I find detailed specifications for the FQD2N80TM_WS?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Same Series
FQD2N80TF
FQD2N80TF
MOSFET N-CH 800V 1.8A DPAK
FQD2N80TM_WS
FQD2N80TM_WS
MOSFET N-CH 800V 1.8A DPAK

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