Overview
The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET produced by Infineon Technologies. This device utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speed and a ruggedized device design. These characteristics make the IRF3710PBF an extremely efficient and reliable device for a wide variety of applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N Channel |
| Drain Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 57 A |
| Drain Source On State Resistance (Rds(on)) | 0.023 Ω |
| Transistor Mounting | Through Hole |
| Power Dissipation (Pd) | 200 W |
| Gate Source Threshold Voltage Max | 4 V |
| No. of Pins | 3 Pins |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 175°C |
| Gate Source Voltage Max (Vgs) | ±20 V |
| Gate Charge (Qg) Max | 130 nC |
| Input Capacitance (Ciss) Max @ Vds | 3130 pF @ 25 V |
Key Features
- Advanced process technology for extremely low on-resistance per silicon area
- Ultra low on-resistance (Rds(on)) of 0.023 Ω
- Dynamic dV/dt rating
- Fully avalanche rated
- Fast switching speed with turn-on delay time of 12 ns, turn-off delay time of 45 ns, rise time of 58 ns, and fall time of 47 ns
- 175°C operating temperature
- Lead-free and RoHS compliant
- Planar cell structure for wide Safe Operating Area (SOA)
Applications
The IRF3710PBF is suitable for a wide range of applications, including:
- Power management
- DC motors
- Inverters
- Switch Mode Power Supplies (SMPS)
- Lighting systems
- Load switches
- Battery-powered applications
Q & A
- What is the drain-source voltage rating of the IRF3710PBF?
The drain-source voltage (Vds) rating is 100 V.
- What is the continuous drain current (Id) of the IRF3710PBF?
The continuous drain current (Id) is 57 A.
- What is the on-state resistance (Rds(on)) of the IRF3710PBF?
The on-state resistance (Rds(on)) is 0.023 Ω.
- What is the maximum operating temperature of the IRF3710PBF?
The maximum operating temperature is 175°C.
- What is the gate source threshold voltage of the IRF3710PBF?
The gate source threshold voltage is 4 V.
- What is the package style of the IRF3710PBF?
The package style is TO-220AB.
- Is the IRF3710PBF RoHS compliant?
Yes, the IRF3710PBF is RoHS compliant.
- What are the typical applications of the IRF3710PBF?
Typical applications include power management, DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.
- What is the input capacitance (Ciss) of the IRF3710PBF at 25 V?
The input capacitance (Ciss) at 25 V is 3130 pF.
- What is the gate charge (Qg) of the IRF3710PBF?
The gate charge (Qg) is 130 nC.
