STW48NM60N
  • Share:

STMicroelectronics STW48NM60N

Manufacturer No:
STW48NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 44A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW48NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. It is particularly suited for high-efficiency converters in demanding applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25 °C 44 A
Continuous Drain Current (ID) at TC = 100 °C 28 A
Pulsed Drain Current (IDM) 176 A
Total Dissipation at TC = 25 °C (PTOT) 330 W
Maximum Junction Temperature (Tj) 150 °C
Static Drain-Source On-Resistance (RDS(on)) 0.055 (typ.), 0.07 (max.) Ω
Thermal Resistance Junction-Case (Rthj-case) 0.38 °C/W
Package Type TO-247

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Suitable for demanding high-efficiency converters

Applications

The STW48NM60N is primarily used in switching applications, including but not limited to:

  • High-efficiency power converters
  • Switch-mode power supplies (SMPS)
  • Solar microinverters
  • Data center power systems

Q & A

  1. What is the maximum drain-source voltage of the STW48NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 44 A at 25 °C and 28 A at 100 °C.

  3. What is the typical on-resistance of the STW48NM60N?

    The typical static drain-source on-resistance (RDS(on)) is 0.055 Ω.

  4. What is the maximum junction temperature for the STW48NM60N?

    The maximum junction temperature (Tj) is 150 °C.

  5. What package type is the STW48NM60N available in?

    The STW48NM60N is available in a TO-247 package.

  6. What are the key features of the STW48NM60N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  7. In what applications is the STW48NM60N commonly used?

    The STW48NM60N is commonly used in switching applications, including high-efficiency power converters and switch-mode power supplies.

  8. What is the thermal resistance junction-case for the STW48NM60N?

    The thermal resistance junction-case (Rthj-case) is 0.38 °C/W.

  9. Is the STW48NM60N RoHS compliant?

    Yes, the STW48NM60N is RoHS compliant with an Ecopack2 grade.

  10. Where can I find SPICE models and other design resources for the STW48NM60N?

    SPICE models, EDA symbols, footprints, and 3D models can be downloaded from the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4285 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$16.33
41

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW48NM60N STW43NM60N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 10V 88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4285 pF @ 50 V 4200 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 330W (Tc) 255W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK

Related Product By Brand

STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT