STW48NM60N
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STMicroelectronics STW48NM60N

Manufacturer No:
STW48NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 44A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW48NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. It is particularly suited for high-efficiency converters in demanding applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25 °C 44 A
Continuous Drain Current (ID) at TC = 100 °C 28 A
Pulsed Drain Current (IDM) 176 A
Total Dissipation at TC = 25 °C (PTOT) 330 W
Maximum Junction Temperature (Tj) 150 °C
Static Drain-Source On-Resistance (RDS(on)) 0.055 (typ.), 0.07 (max.) Ω
Thermal Resistance Junction-Case (Rthj-case) 0.38 °C/W
Package Type TO-247

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Suitable for demanding high-efficiency converters

Applications

The STW48NM60N is primarily used in switching applications, including but not limited to:

  • High-efficiency power converters
  • Switch-mode power supplies (SMPS)
  • Solar microinverters
  • Data center power systems

Q & A

  1. What is the maximum drain-source voltage of the STW48NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 44 A at 25 °C and 28 A at 100 °C.

  3. What is the typical on-resistance of the STW48NM60N?

    The typical static drain-source on-resistance (RDS(on)) is 0.055 Ω.

  4. What is the maximum junction temperature for the STW48NM60N?

    The maximum junction temperature (Tj) is 150 °C.

  5. What package type is the STW48NM60N available in?

    The STW48NM60N is available in a TO-247 package.

  6. What are the key features of the STW48NM60N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  7. In what applications is the STW48NM60N commonly used?

    The STW48NM60N is commonly used in switching applications, including high-efficiency power converters and switch-mode power supplies.

  8. What is the thermal resistance junction-case for the STW48NM60N?

    The thermal resistance junction-case (Rthj-case) is 0.38 °C/W.

  9. Is the STW48NM60N RoHS compliant?

    Yes, the STW48NM60N is RoHS compliant with an Ecopack2 grade.

  10. Where can I find SPICE models and other design resources for the STW48NM60N?

    SPICE models, EDA symbols, footprints, and 3D models can be downloaded from the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4285 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW48NM60N STW43NM60N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 10V 88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4285 pF @ 50 V 4200 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 330W (Tc) 255W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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