BCX5116E6327HTSA1
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Infineon Technologies BCX5116E6327HTSA1

Manufacturer No:
BCX5116E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 1A SOT89-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5116E6327HTSA1 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for small signal applications and is known for its reliability and efficiency. It is packaged in a SOT-89 format, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce) 45 V
Collector Current (Ic) 1 A
Transition Frequency (fT) 125 MHz
Power Dissipation (Pd) 2 W
Package Type SOT-89 (4-pin with tab)
Operating Temperature -55°C to 150°C
RoHS Compliance Yes

Key Features

  • High Transition Frequency: The BCX5116E6327HTSA1 has a transition frequency of 125 MHz, making it suitable for high-frequency applications.
  • Low Power Consumption: With a power dissipation of 2 W, this transistor is energy-efficient and suitable for applications where power consumption is a concern.
  • Compact Packaging: The SOT-89 package is compact and ideal for space-constrained designs.
  • Wide Operating Temperature Range: The transistor can operate over a wide temperature range from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • Audio Amplifiers: The high transition frequency and low power consumption make this transistor suitable for audio amplifier circuits.
  • Switching Circuits: It can be used in switching applications due to its high collector current and low saturation voltage.
  • General Purpose Amplification: The BCX5116E6327HTSA1 is suitable for general-purpose amplification in various electronic circuits.
  • Automotive and Industrial Electronics: Its wide operating temperature range makes it a good choice for automotive and industrial electronic applications.

Q & A

  1. What is the collector-emitter voltage rating of the BCX5116E6327HTSA1?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current of this transistor?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCX5116E6327HTSA1?

    The transition frequency is 125 MHz.

  4. What type of package does the BCX5116E6327HTSA1 come in?

    The transistor is packaged in a SOT-89 format.

  5. Is the BCX5116E6327HTSA1 RoHS compliant?

    Yes, it is RoHS compliant.

  6. What is the operating temperature range of this transistor?

    The operating temperature range is from -55°C to 150°C.

  7. What are some common applications for the BCX5116E6327HTSA1?

    Common applications include audio amplifiers, switching circuits, general-purpose amplification, and automotive and industrial electronics.

  8. How much power can the BCX5116E6327HTSA1 dissipate?

    The transistor can dissipate up to 2 W of power.

  9. Where can I purchase the BCX5116E6327HTSA1?

    You can purchase this transistor from various electronic component distributors such as Digi-Key, Mouser, and Lisleapex Electronic.

  10. What is the minimum order quantity for the BCX5116E6327HTSA1?

    The minimum order quantity can vary depending on the distributor, but it is often available in quantities as low as 1 piece.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89-4-2
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Similar Products

Part Number BCX5116E6327HTSA1 BCX5516E6327HTSA1 BCX5216E6327HTSA1 BCX5316E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89-4-2 PG-SOT89-4-2 PG-SOT89 PG-SOT89

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