BCX5116E6327HTSA1
  • Share:

Infineon Technologies BCX5116E6327HTSA1

Manufacturer No:
BCX5116E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 1A SOT89-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5116E6327HTSA1 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for small signal applications and is known for its reliability and efficiency. It is packaged in a SOT-89 format, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce) 45 V
Collector Current (Ic) 1 A
Transition Frequency (fT) 125 MHz
Power Dissipation (Pd) 2 W
Package Type SOT-89 (4-pin with tab)
Operating Temperature -55°C to 150°C
RoHS Compliance Yes

Key Features

  • High Transition Frequency: The BCX5116E6327HTSA1 has a transition frequency of 125 MHz, making it suitable for high-frequency applications.
  • Low Power Consumption: With a power dissipation of 2 W, this transistor is energy-efficient and suitable for applications where power consumption is a concern.
  • Compact Packaging: The SOT-89 package is compact and ideal for space-constrained designs.
  • Wide Operating Temperature Range: The transistor can operate over a wide temperature range from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • Audio Amplifiers: The high transition frequency and low power consumption make this transistor suitable for audio amplifier circuits.
  • Switching Circuits: It can be used in switching applications due to its high collector current and low saturation voltage.
  • General Purpose Amplification: The BCX5116E6327HTSA1 is suitable for general-purpose amplification in various electronic circuits.
  • Automotive and Industrial Electronics: Its wide operating temperature range makes it a good choice for automotive and industrial electronic applications.

Q & A

  1. What is the collector-emitter voltage rating of the BCX5116E6327HTSA1?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current of this transistor?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCX5116E6327HTSA1?

    The transition frequency is 125 MHz.

  4. What type of package does the BCX5116E6327HTSA1 come in?

    The transistor is packaged in a SOT-89 format.

  5. Is the BCX5116E6327HTSA1 RoHS compliant?

    Yes, it is RoHS compliant.

  6. What is the operating temperature range of this transistor?

    The operating temperature range is from -55°C to 150°C.

  7. What are some common applications for the BCX5116E6327HTSA1?

    Common applications include audio amplifiers, switching circuits, general-purpose amplification, and automotive and industrial electronics.

  8. How much power can the BCX5116E6327HTSA1 dissipate?

    The transistor can dissipate up to 2 W of power.

  9. Where can I purchase the BCX5116E6327HTSA1?

    You can purchase this transistor from various electronic component distributors such as Digi-Key, Mouser, and Lisleapex Electronic.

  10. What is the minimum order quantity for the BCX5116E6327HTSA1?

    The minimum order quantity can vary depending on the distributor, but it is often available in quantities as low as 1 piece.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89-4-2
0 Remaining View Similar

In Stock

$0.09
5,669

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCX5116E6327HTSA1 BCX5516E6327HTSA1 BCX5216E6327HTSA1 BCX5316E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89-4-2 PG-SOT89-4-2 PG-SOT89 PG-SOT89

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC856BE6327
BC856BE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCX 55-16 E6327
BCX 55-16 E6327
Infineon Technologies
TRANS NPN 60V 1A SOT-89
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC