BC860BE6327
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Infineon Technologies BC860BE6327

Manufacturer No:
BC860BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860BE6327 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is housed in a SOT23 plastic package, making it suitable for a variety of applications where space is limited. It is part of the BC860 series, which is known for its reliability and performance in low-current, low-voltage scenarios.

Key Specifications

Parameter Value Unit
Type PNP -
Package SOT23 -
Maximum Collector Current (I_C) 100 mA
Maximum Collector-Emitter Voltage (V_CE) 45 V
Maximum Power Dissipation (P_tot) 250 mW
Transition Frequency (f_T) 100 MHz
Current Gain (h_FE) 220 - 475 -
Noise Figure 4 dB
NPN Complement BC849, BC850 -
AEC-Q101 Qualified Yes -

Key Features

  • Low Current and Voltage: The BC860BE6327 operates with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it suitable for low-power applications.
  • Compact Package: The SOT23 package is small and efficient, ideal for designs where space is limited.
  • Low Noise: With a noise figure of 4 dB, this transistor is suitable for low noise input stages of audio frequency equipment.
  • AEC-Q101 Qualified: This transistor meets the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.
  • High Transition Frequency: A transition frequency of 100 MHz allows for high-frequency operation.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, the BC860BE6327 is suitable for use in automotive electronics, such as in audio systems, sensors, and control units.
  • Industrial Control: It can be used in various industrial control applications where reliability and low noise are crucial.
  • Consumer Electronics: This transistor is applicable in consumer electronics such as audio equipment, home appliances, and other low-power devices.
  • Mobile and Wearable Devices: Its compact size and low power consumption make it suitable for mobile and wearable devices.

Q & A

  1. What is the maximum collector current of the BC860BE6327?

    The maximum collector current is 100 mA.

  2. What is the package type of the BC860BE6327?

    The package type is SOT23.

  3. What is the maximum collector-emitter voltage of the BC860BE6327?

    The maximum collector-emitter voltage is 45 V.

  4. Is the BC860BE6327 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  5. What is the transition frequency of the BC860BE6327?

    The transition frequency is 100 MHz.

  6. What are the NPN complements of the BC860BE6327?

    The NPN complements are BC849 and BC850.

  7. What is the noise figure of the BC860BE6327?

    The noise figure is 4 dB.

  8. What are some common applications of the BC860BE6327?

    Common applications include automotive systems, industrial control, consumer electronics, and mobile/wearable devices.

  9. What is the maximum power dissipation of the BC860BE6327?

    The maximum power dissipation is 250 mW.

  10. Where can I find the datasheet for the BC860BE6327?

    You can find the datasheet on the official Nexperia website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC860BE6327 BC860BWE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23

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