BC860BWE6327
  • Share:

Infineon Technologies BC860BWE6327

Manufacturer No:
BC860BWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC860BWE6327 is a small signal PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in a surface-mount PG-SOT23 format, making it suitable for a wide range of electronic circuits where space is a concern.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce)45 V
Collector Current (Ic)100 mA
Frequency (fT)250 MHz
Power Dissipation (Pd)330 mW
Vce Saturation (Vce(sat)) @ Ib, Ic650 mV @ 5 mA, 100 mA
Package TypePG-SOT23 (Surface Mount)

Key Features

  • High Frequency Capability: With a transition frequency (fT) of 250 MHz, this transistor is suitable for high-frequency applications.
  • Low Saturation Voltage: The Vce saturation voltage is as low as 650 mV, which helps in reducing power consumption.
  • Compact Packaging: The PG-SOT23 package makes it ideal for space-constrained designs.
  • General-Purpose Use: Suitable for both amplification and switching applications.

Applications

The BC860BWE6327 is versatile and can be used in various electronic circuits, including:

  • Audio Amplifiers: Due to its high frequency response, it is suitable for audio amplification.
  • Switching Circuits: Its low saturation voltage and high current handling make it a good choice for switching applications.
  • Signal Processing: It can be used in active filters and other signal processing circuits.
  • Automotive and Industrial Electronics: Its robust specifications make it suitable for use in automotive and industrial environments.

Q & A

  1. What is the collector-emitter voltage rating of the BC860BWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current of the BC860BWE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency (fT) of the BC860BWE6327?
    The transition frequency is 250 MHz.
  4. What is the power dissipation of the BC860BWE6327?
    The power dissipation is 330 mW.
  5. What is the package type of the BC860BWE6327?
    The package type is PG-SOT23 (Surface Mount).
  6. What is the Vce saturation voltage of the BC860BWE6327?
    The Vce saturation voltage is 650 mV @ 5 mA, 100 mA.
  7. Is the BC860BWE6327 suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its high transition frequency.
  8. Can the BC860BWE6327 be used in switching circuits?
    Yes, it can be used in switching circuits due to its low saturation voltage and high current handling.
  9. What are some common applications of the BC860BWE6327?
    Common applications include audio amplifiers, switching circuits, signal processing, and automotive and industrial electronics.
  10. Who is the manufacturer of the BC860BWE6327?
    The manufacturer is Infineon Technologies.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.02
16,922

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC860BWE6327 BC860CWE6327 BC860BWH6327 BC860BE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 420 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT323-3-1 PG-SOT23-3-11

Related Product By Categories

PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAV199E6327HTSA1
BAV199E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BCP54-16E6433
BCP54-16E6433
Infineon Technologies
TRANS NPN 45V 1A SOT223
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
ITS716GFUMA1
ITS716GFUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I