IRF100B201
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Infineon Technologies IRF100B201

Manufacturer No:
IRF100B201
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 100V 192A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The IRF100B201 is a high-performance N-Channel power MOSFET from Infineon Technologies, part of the StrongIRFET™ family. This device is optimized for low RDS(on) and high current capability, making it ideal for low-frequency applications. The IRF100B201 is designed to provide efficient power management and is widely used in various industrial and automotive systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)100V
Current Rating (Id)192A
Threshold Voltage (Vth)4V @ 250μA
On-Resistance (Rds(on))4.2mΩ @ 115A, 10V
Power Dissipation (Pd)441W
Package TypeTO-220(TO-220-3)

Key Features

  • Low RDS(on) for high efficiency
  • High current capability
  • Ideal for low-frequency applications
  • TO-220 package for easy mounting and heat dissipation
  • High power dissipation capability

Applications

  • Industrial power supplies
  • Automotive systems
  • Motor control and drive systems
  • Power conversion and switching applications
  • High-power DC-DC converters

Q & A

  1. What is the voltage rating of the IRF100B201 MOSFET? The voltage rating of the IRF100B201 MOSFET is 100V.
  2. What is the current rating of the IRF100B201 MOSFET? The current rating of the IRF100B201 MOSFET is 192A.
  3. What is the on-resistance (Rds(on)) of the IRF100B201 MOSFET? The on-resistance (Rds(on)) of the IRF100B201 MOSFET is 4.2mΩ @ 115A, 10V.
  4. In what package is the IRF100B201 MOSFET available? The IRF100B201 MOSFET is available in the TO-220(TO-220-3) package.
  5. What are the typical applications of the IRF100B201 MOSFET? The IRF100B201 MOSFET is typically used in industrial power supplies, automotive systems, motor control and drive systems, power conversion and switching applications, and high-power DC-DC converters.
  6. What is the power dissipation capability of the IRF100B201 MOSFET? The power dissipation capability of the IRF100B201 MOSFET is 441W.
  7. Why is the IRF100B201 MOSFET part of the StrongIRFET™ family? The IRF100B201 MOSFET is part of the StrongIRFET™ family due to its optimized performance for low RDS(on) and high current capability.
  8. What is the threshold voltage of the IRF100B201 MOSFET? The threshold voltage of the IRF100B201 MOSFET is 4V @ 250μA.
  9. Is the IRF100B201 MOSFET suitable for high-frequency applications? No, the IRF100B201 MOSFET is more suitable for low-frequency applications.
  10. Where can I find detailed specifications and datasheets for the IRF100B201 MOSFET? Detailed specifications and datasheets for the IRF100B201 MOSFET can be found on the official Infineon Technologies website, as well as on distributor websites like Mouser, Future Electronics, and Heisener.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:192A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):441W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Same Series
IRF100S201
IRF100S201
MOSFET N-CH 100V 192A D2PAK

Similar Products

Part Number IRF100B201 IRF100B202 IRF100S201
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 192A (Tc) 97A (Tc) 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 115A, 10V 8.6mOhm @ 58A, 10V 4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 150µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V 116 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 50 V 4476 pF @ 50 V 9500 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 441W (Tc) 221W (Tc) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-220AB PG-TO263-3
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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