Overview
The BCP53-10E6327 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BCP53 series, known for its high performance and reliability in various electronic applications. It is particularly suited for use in amplifier and switching circuits due to its robust specifications and compact surface mount package.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500 mV @ 50 mA, 500 mA |
| Current - Collector Cutoff (Max) | 100 nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150 mA, 2 V |
| Power - Max | 2 W |
| Frequency - Transition | 125 MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PG-SOT223-4 |
Key Features
- High collector current up to 1 A.
- High collector-emitter voltage up to 80 V.
- Low Vce saturation voltage of 500 mV.
- High DC current gain (hFE) of 40 at 150 mA and 2 V.
- Compact surface mount package (PG-SOT223-4) for efficient space usage.
- Wide operating temperature range from -55°C to 150°C.
- High transition frequency of 125 MHz, suitable for high-frequency applications.
Applications
The BCP53-10E6327 transistor is versatile and can be used in a variety of applications, including:
- Amplifier circuits: Due to its high current gain and low Vce saturation, it is suitable for amplifier applications.
- Switching circuits: Its high transition frequency and robust collector-emitter breakdown voltage make it ideal for switching applications.
- Automotive electronics: The wide operating temperature range and high reliability make it suitable for automotive applications.
- Industrial control systems: It can be used in various industrial control systems requiring high performance and reliability.
Q & A
- What is the maximum collector current of the BCP53-10E6327 transistor?
The maximum collector current is 1 A.
- What is the collector-emitter breakdown voltage of the BCP53-10E6327?
The collector-emitter breakdown voltage is 80 V.
- What is the Vce saturation voltage of the BCP53-10E6327?
The Vce saturation voltage is 500 mV at 50 mA and 500 mA.
- What is the DC current gain (hFE) of the BCP53-10E6327?
The DC current gain (hFE) is 40 at 150 mA and 2 V.
- What is the maximum power dissipation of the BCP53-10E6327?
The maximum power dissipation is 2 W.
- What is the transition frequency of the BCP53-10E6327?
The transition frequency is 125 MHz.
- What is the operating temperature range of the BCP53-10E6327?
The operating temperature range is from -55°C to 150°C (TJ).
- What type of package does the BCP53-10E6327 come in?
The transistor comes in a PG-SOT223-4 surface mount package.
- Is the BCP53-10E6327 suitable for high-frequency applications?
Yes, it is suitable due to its high transition frequency of 125 MHz.
- Can the BCP53-10E6327 be used in automotive applications?
Yes, it can be used in automotive applications due to its wide operating temperature range and high reliability.
