BCV62BE6327HTSA1
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Infineon Technologies BCV62BE6327HTSA1

Manufacturer No:
BCV62BE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 30V 0.1A SOT143
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV62BE6327HTSA1 is a bipolar junction transistor (BJT) array produced by Infineon Technologies. This component is specifically designed as a dual 2PNP transistor array, making it suitable for a variety of electronic applications that require multiple transistors in a compact package. The device is housed in a PG-SOT-143-3D surface mount package, which is ideal for space-constrained designs and high-density circuit boards.

Key Specifications

ParameterValue
Transistor TypeDual 2PNP BJT Array
Collector-Emitter Voltage (Vce)30V
DC Collector Current (Ic)100mA
Peak Collector Current (Icm)200mA
Emitter-Base Voltage (Veb)6V
Transition Frequency (ft)250MHz
Power Dissipation (Ptot)300mW
Package TypePG-SOT-143-3D Surface Mount

Key Features

  • Dual 2PNP transistor configuration in a single package, reducing board space and increasing design efficiency.
  • High collector-emitter voltage of 30V, suitable for applications requiring moderate to high voltage handling.
  • Low DC collector current of 100mA, making it energy-efficient for various applications.
  • High transition frequency of 250MHz, enabling the device to operate effectively in high-frequency circuits.
  • Compact PG-SOT-143-3D surface mount package, ideal for high-density circuit boards.

Applications

The BCV62BE6327HTSA1 is versatile and can be used in a variety of electronic applications, including:

  • Audio amplifiers and audio signal processing circuits.
  • Switching and amplification stages in electronic devices.
  • Automotive electronics, such as in-car audio systems and other vehicle control systems.
  • Industrial control systems and automation.
  • Consumer electronics, such as home appliances and personal devices.

Q & A

  1. What is the BCV62BE6327HTSA1?

    The BCV62BE6327HTSA1 is a dual 2PNP bipolar junction transistor (BJT) array produced by Infineon Technologies.

  2. What is the collector-emitter voltage of the BCV62BE6327HTSA1?

    The collector-emitter voltage (Vce) is 30V.

  3. What is the DC collector current of the BCV62BE6327HTSA1?

    The DC collector current (Ic) is 100mA.

  4. What is the transition frequency of the BCV62BE6327HTSA1?

    The transition frequency (ft) is 250MHz.

  5. What is the power dissipation of the BCV62BE6327HTSA1?

    The power dissipation (Ptot) is 300mW.

  6. What package type does the BCV62BE6327HTSA1 use?

    The BCV62BE6327HTSA1 is housed in a PG-SOT-143-3D surface mount package.

  7. What are some common applications of the BCV62BE6327HTSA1?

    Common applications include audio amplifiers, switching and amplification stages, automotive electronics, industrial control systems, and consumer electronics.

  8. Why is the BCV62BE6327HTSA1 beneficial for high-density circuit boards?

    The compact PG-SOT-143-3D surface mount package makes it ideal for high-density circuit boards, reducing board space and increasing design efficiency.

  9. What is the peak collector current of the BCV62BE6327HTSA1?

    The peak collector current (Icm) is 200mA.

  10. What is the emitter-base voltage of the BCV62BE6327HTSA1?

    The emitter-base voltage (Veb) is 6V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
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Similar Products

Part Number BCV62BE6327HTSA1 BCV62CE6327HTSA1 BCV62AE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 300mW 300mW 300mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package PG-SOT-143-3D PG-SOT-143-3D PG-SOT-143-3D

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