IRF9530NPBF
  • Share:

Infineon Technologies IRF9530NPBF

Manufacturer No:
IRF9530NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 14A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF9530NPBF is a 100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Specification Value
VDS (Drain-Source Voltage) 100V
VGS (Gate-Source Voltage) ±20V
ID (Continuous Drain Current) 6.3A
RDS(on) (On-Resistance) 0.18Ω
PD (Power Dissipation) 80W
Package TO-220

Key Features

The IRF9530NPBF features a planar cell structure for a wide Safe Operating Area (SOA). It is optimized for broadest availability from distribution partners and is qualified according to JEDEC standards. The silicon is optimized for applications switching below 100kHz, making it suitable for low-frequency applications. The device offers high-current rating, increased ruggedness, and standard pin-out allowing for drop-in replacement.

Applications

The IRF9530NPBF is versatile and can be used in a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications. Its high performance in low-frequency applications and high current capability make it a reliable choice for these use cases.

Q & A

  1. What is the drain-source voltage (VDS) of the IRF9530NPBF?

    The drain-source voltage (VDS) of the IRF9530NPBF is 100V.

  2. What is the package type of the IRF9530NPBF?

    The IRF9530NPBF is packaged in a TO-220 package.

  3. What is the continuous drain current (ID) of the IRF9530NPBF?

    The continuous drain current (ID) of the IRF9530NPBF is 6.3A.

  4. What are the typical applications of the IRF9530NPBF?

    The IRF9530NPBF is typically used in DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.

  5. What is the on-resistance (RDS(on)) of the IRF9530NPBF?

    The on-resistance (RDS(on)) of the IRF9530NPBF is 0.18Ω.

  6. Is the IRF9530NPBF qualified according to any industry standards?

    Yes, the IRF9530NPBF is qualified according to JEDEC standards.

  7. What is the power dissipation (PD) of the IRF9530NPBF?

    The power dissipation (PD) of the IRF9530NPBF is 80W.

  8. Does the IRF9530NPBF have a standard pin-out?

    Yes, the IRF9530NPBF has a standard pin-out, allowing for drop-in replacement.

  9. What is the gate-source voltage (VGS) of the IRF9530NPBF?

    The gate-source voltage (VGS) of the IRF9530NPBF is ±20V.

  10. Is the IRF9530NPBF optimized for high-frequency applications?

    No, the IRF9530NPBF is optimized for applications switching below 100kHz, making it more suitable for low-frequency applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.08
545

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF9530NPBF IRF9540NPBF IRF9530PBF IRF9530SPBF IRF9530NSPBF IRF9520NPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Last Time Buy
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 23A (Tc) 12A (Tc) 12A (Tc) 14A (Tc) 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 200mOhm @ 8.4A, 10V 117mOhm @ 11A, 10V 300mOhm @ 7.2A, 10V 300mOhm @ 7.2A, 10V 200mOhm @ 8.4A, 10V 480mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 97 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 58 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V 1300 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V 760 pF @ 25 V 350 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 79W (Tc) 140W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 79W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
XDPE12284C0000XUMA1
XDPE12284C0000XUMA1
Infineon Technologies
IC REG LINEAR VOLTAGE NEG
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC