IRF9530NPBF
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Infineon Technologies IRF9530NPBF

Manufacturer No:
IRF9530NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 14A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF9530NPBF is a 100V single P-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and ruggedness.

Key Specifications

Specification Value
VDS (Drain-Source Voltage) 100V
VGS (Gate-Source Voltage) ±20V
ID (Continuous Drain Current) 6.3A
RDS(on) (On-Resistance) 0.18Ω
PD (Power Dissipation) 80W
Package TO-220

Key Features

The IRF9530NPBF features a planar cell structure for a wide Safe Operating Area (SOA). It is optimized for broadest availability from distribution partners and is qualified according to JEDEC standards. The silicon is optimized for applications switching below 100kHz, making it suitable for low-frequency applications. The device offers high-current rating, increased ruggedness, and standard pin-out allowing for drop-in replacement.

Applications

The IRF9530NPBF is versatile and can be used in a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications. Its high performance in low-frequency applications and high current capability make it a reliable choice for these use cases.

Q & A

  1. What is the drain-source voltage (VDS) of the IRF9530NPBF?

    The drain-source voltage (VDS) of the IRF9530NPBF is 100V.

  2. What is the package type of the IRF9530NPBF?

    The IRF9530NPBF is packaged in a TO-220 package.

  3. What is the continuous drain current (ID) of the IRF9530NPBF?

    The continuous drain current (ID) of the IRF9530NPBF is 6.3A.

  4. What are the typical applications of the IRF9530NPBF?

    The IRF9530NPBF is typically used in DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.

  5. What is the on-resistance (RDS(on)) of the IRF9530NPBF?

    The on-resistance (RDS(on)) of the IRF9530NPBF is 0.18Ω.

  6. Is the IRF9530NPBF qualified according to any industry standards?

    Yes, the IRF9530NPBF is qualified according to JEDEC standards.

  7. What is the power dissipation (PD) of the IRF9530NPBF?

    The power dissipation (PD) of the IRF9530NPBF is 80W.

  8. Does the IRF9530NPBF have a standard pin-out?

    Yes, the IRF9530NPBF has a standard pin-out, allowing for drop-in replacement.

  9. What is the gate-source voltage (VGS) of the IRF9530NPBF?

    The gate-source voltage (VGS) of the IRF9530NPBF is ±20V.

  10. Is the IRF9530NPBF optimized for high-frequency applications?

    No, the IRF9530NPBF is optimized for applications switching below 100kHz, making it more suitable for low-frequency applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF9530NPBF IRF9540NPBF IRF9530PBF IRF9530SPBF IRF9530NSPBF IRF9520NPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Last Time Buy
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 23A (Tc) 12A (Tc) 12A (Tc) 14A (Tc) 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 200mOhm @ 8.4A, 10V 117mOhm @ 11A, 10V 300mOhm @ 7.2A, 10V 300mOhm @ 7.2A, 10V 200mOhm @ 8.4A, 10V 480mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 97 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 58 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V 1300 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V 760 pF @ 25 V 350 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 79W (Tc) 140W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 79W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

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