STL38N65M5
  • Share:

STMicroelectronics STL38N65M5

Manufacturer No:
STL38N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V PWRFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL38N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. It is packaged in a PowerFLAT™ 8x8 HV package, which is environmentally compliant and available in various ECOPACK® grades.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)650V
Gate-source voltage (VGS)±25V
Continuous drain current (ID) at TC = 25 °C22.5A
Continuous drain current (ID) at TC = 100 °C16A
Pulsed drain current (IDM)90A
On-resistance (RDS(on))0.090 (typ.)Ω
Gate threshold voltage (VGS(th))-V
Thermal resistance junction-case (Rthj-case)0.83°C/W
Thermal resistance junction-pcb (Rthj-pcb)45°C/W
Maximum operating junction temperature (Tj)150°C

Key Features

  • Extremely low on-resistance (RDS(on) = 0.090 Ω typ.)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • High power and superior efficiency
  • Environmentally compliant ECOPACK® packages

Applications

The STL38N65M5 is particularly suited for switching applications that require high power and superior efficiency. These include but are not limited to:

  • Power supplies
  • Motor control
  • Industrial automation
  • Renewable energy systems
  • High-efficiency power conversion systems

Q & A

  1. What is the maximum drain-source voltage of the STL38N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STL38N65M5?
    The typical on-resistance (RDS(on)) is 0.090 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 22.5 A.
  4. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150 °C.
  5. What package type is the STL38N65M5 available in?
    The STL38N65M5 is available in a PowerFLAT™ 8x8 HV package.
  6. Is the STL38N65M5 environmentally compliant?
    Yes, it is available in various ECOPACK® grades, which are environmentally compliant.
  7. What are the key features of the STL38N65M5?
    The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
  8. What are some typical applications for the STL38N65M5?
    Typical applications include power supplies, motor control, industrial automation, renewable energy systems, and high-efficiency power conversion systems.
  9. What is the thermal resistance junction-case (Rthj-case) of the STL38N65M5?
    The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.
  10. What is the maximum pulsed drain current (IDM) of the STL38N65M5?
    The maximum pulsed drain current (IDM) is 90 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$6.82
62

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL38N65M5 STL8N65M5 STL18N65M5 STL31N65M5 STL34N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 22.5A (Tc) 1.4A (Ta), 7A (Tc) 15A (Tc) 2.8A (Ta), 15A (Tc) 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 12.5A, 10V 600mOhm @ 3.5A, 10V 240mOhm @ 7.5A, 10V 162mOhm @ 11A, 10V 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 15 nC @ 10 V 31 nC @ 10 V 45 nC @ 10 V 62.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 100 V 690 pF @ 100 V 1240 pF @ 100 V 1865 pF @ 100 V 2700 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 150W (Tc) 2.5W (Ta), 70W (Tc) 57W (Tc) 2.8W (Ta), 125W (Tc) 2.8W (Ta), 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFLAT™ (5x5) PowerFlat™ (5x6) PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP