STL38N65M5
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STMicroelectronics STL38N65M5

Manufacturer No:
STL38N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V PWRFLAT HV
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STL38N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. It is packaged in a PowerFLAT™ 8x8 HV package, which is environmentally compliant and available in various ECOPACK® grades.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)650V
Gate-source voltage (VGS)±25V
Continuous drain current (ID) at TC = 25 °C22.5A
Continuous drain current (ID) at TC = 100 °C16A
Pulsed drain current (IDM)90A
On-resistance (RDS(on))0.090 (typ.)Ω
Gate threshold voltage (VGS(th))-V
Thermal resistance junction-case (Rthj-case)0.83°C/W
Thermal resistance junction-pcb (Rthj-pcb)45°C/W
Maximum operating junction temperature (Tj)150°C

Key Features

  • Extremely low on-resistance (RDS(on) = 0.090 Ω typ.)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • High power and superior efficiency
  • Environmentally compliant ECOPACK® packages

Applications

The STL38N65M5 is particularly suited for switching applications that require high power and superior efficiency. These include but are not limited to:

  • Power supplies
  • Motor control
  • Industrial automation
  • Renewable energy systems
  • High-efficiency power conversion systems

Q & A

  1. What is the maximum drain-source voltage of the STL38N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STL38N65M5?
    The typical on-resistance (RDS(on)) is 0.090 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 22.5 A.
  4. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150 °C.
  5. What package type is the STL38N65M5 available in?
    The STL38N65M5 is available in a PowerFLAT™ 8x8 HV package.
  6. Is the STL38N65M5 environmentally compliant?
    Yes, it is available in various ECOPACK® grades, which are environmentally compliant.
  7. What are the key features of the STL38N65M5?
    The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
  8. What are some typical applications for the STL38N65M5?
    Typical applications include power supplies, motor control, industrial automation, renewable energy systems, and high-efficiency power conversion systems.
  9. What is the thermal resistance junction-case (Rthj-case) of the STL38N65M5?
    The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.
  10. What is the maximum pulsed drain current (IDM) of the STL38N65M5?
    The maximum pulsed drain current (IDM) is 90 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL38N65M5 STL8N65M5 STL18N65M5 STL31N65M5 STL34N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 22.5A (Tc) 1.4A (Ta), 7A (Tc) 15A (Tc) 2.8A (Ta), 15A (Tc) 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 12.5A, 10V 600mOhm @ 3.5A, 10V 240mOhm @ 7.5A, 10V 162mOhm @ 11A, 10V 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 15 nC @ 10 V 31 nC @ 10 V 45 nC @ 10 V 62.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 100 V 690 pF @ 100 V 1240 pF @ 100 V 1865 pF @ 100 V 2700 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 150W (Tc) 2.5W (Ta), 70W (Tc) 57W (Tc) 2.8W (Ta), 125W (Tc) 2.8W (Ta), 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFLAT™ (5x5) PowerFlat™ (5x6) PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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