STL31N65M5
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STMicroelectronics STL31N65M5

Manufacturer No:
STL31N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 15A PWRFLAT88
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STL31N65M5 is an N-channel MDmesh™ V Power MOSFET manufactured by STMicroelectronics. This device utilizes an innovative proprietary vertical process technology, combining it with STMicroelectronics' advanced manufacturing capabilities. The STL31N65M5 is designed to offer high performance and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))0.135 Ω (typ.)
Continuous Drain Current (Id)15 A (Tc), 2.8 A (Ta)
Power Dissipation (Pd)2.8 W (Ta), 125 W (Tc)
Package TypeSurface Mount PowerFlat™ (8x8) HV

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.135 Ω (typ.), reducing power losses and improving efficiency.
  • High continuous drain current of 15 A (Tc) and 2.8 A (Ta), enabling robust performance in demanding environments.
  • Advanced MDmesh™ V technology for enhanced reliability and performance.
  • Compact PowerFlat™ (8x8) HV package for efficient thermal management and space-saving design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the voltage rating of the STL31N65M5 MOSFET?
    The STL31N65M5 has a voltage rating of 650 V.
  2. What is the typical on-resistance of the STL31N65M5?
    The typical on-resistance (Rds(on)) is 0.135 Ω.
  3. What is the continuous drain current of the STL31N65M5?
    The continuous drain current is 15 A (Tc) and 2.8 A (Ta).
  4. What package type does the STL31N65M5 use?
    The STL31N65M5 uses a Surface Mount PowerFlat™ (8x8) HV package.
  5. What technology is used in the STL31N65M5?
    The STL31N65M5 uses STMicroelectronics' advanced MDmesh™ V technology.
  6. What are some common applications for the STL31N65M5?
    Common applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-power audio amplifiers.
  7. How much power can the STL31N65M5 dissipate?
    The STL31N65M5 can dissipate up to 2.8 W (Ta) and 125 W (Tc).
  8. Is the STL31N65M5 suitable for high-power applications?
    Yes, the STL31N65M5 is designed for high-power applications due to its high voltage and current ratings.
  9. Where can I find detailed specifications for the STL31N65M5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.
  10. What are the benefits of using the MDmesh™ V technology in the STL31N65M5?
    The MDmesh™ V technology enhances the device's reliability and performance by reducing power losses and improving thermal management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:162mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1865 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL31N65M5 STL38N65M5 STL34N65M5 STL11N65M5 STL21N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta), 15A (Tc) 3.5A (Ta), 22.5A (Tc) 22.5A (Tc) 8.5A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 162mOhm @ 11A, 10V 105mOhm @ 12.5A, 10V 120mOhm @ 12A, 10V 530mOhm @ 4.25A, 10V 179mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 71 nC @ 10 V 62.5 nC @ 10 V 17 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1865 pF @ 100 V 3000 pF @ 100 V 2700 pF @ 100 V 644 pF @ 100 V 1950 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 125W (Tc) 2.8W (Ta), 150W (Tc) 2.8W (Ta), 150W (Tc) 70W (Tc) 3W (Ta), 125W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFLAT™ (5x5) PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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