STL21N65M5
  • Share:

STMicroelectronics STL21N65M5

Manufacturer No:
STL21N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 17A PWRFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL21N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout structure. This device is renowned for its extremely low on-resistance, making it ideal for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 650 V
On-Resistance (RDS(ON)) 175 mΩ (typ.)
Continuous Drain Current (ID) 17 A A
Package PowerFLAT 8x8 HV
Operating Temperature Range -40°C to 150°C °C
RoHS Compliance Ecopack2

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

The STL21N65M5 is optimized for high-power applications, including:

  • Power Factor Correction (PFC)
  • Pulse Width Modulation (PWM) topologies in hard switching applications
  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STL21N65M5?

    The drain-source voltage (VDS) rating is 650 V.

  2. What is the typical on-resistance of the STL21N65M5?

    The typical on-resistance (RDS(ON)) is 175 mΩ.

  3. What is the continuous drain current rating of the STL21N65M5?

    The continuous drain current (ID) rating is 17 A.

  4. In what package is the STL21N65M5 available?

    The STL21N65M5 is available in the PowerFLAT 8x8 HV package.

  5. What is the operating temperature range of the STL21N65M5?

    The operating temperature range is -40°C to 150°C.

  6. Is the STL21N65M5 RoHS compliant?
  7. What are some key features of the STL21N65M5?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  8. What applications is the STL21N65M5 suited for?

    The STL21N65M5 is suited for high-power PFC, PWM topologies, SMPS, data centers, and solar microinverters.

  9. Where can I find CAD models and other resources for the STL21N65M5?

    CAD models, EDA symbols, footprints, and 3D models can be downloaded from the STMicroelectronics website.

  10. How can I purchase the STL21N65M5?

    The STL21N65M5 can be purchased through STMicroelectronics or authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:179mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$7.38
85

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL21N65M5 STL31N65M5 STL11N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 2.8A (Ta), 15A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 179mOhm @ 8.5A, 10V 162mOhm @ 11A, 10V 530mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 45 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 100 V 1865 pF @ 100 V 644 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta), 125W (Tc) 2.8W (Ta), 125W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFLAT™ (5x5)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA