Overview
The STL11N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. It is packaged in a PowerFLAT™ 5x5 package, enhancing thermal performance and reducing footprint.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 650 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25°C | 8.5 | A |
| Continuous Drain Current (ID) at TC = 100°C | 4.9 | A |
| Pulsed Drain Current (IDM) | 34 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.475 (typ), 0.530 (max) | Ω |
| Total Dissipation at TC = 25°C | 70 | W |
| Thermal Resistance Junction-Case | 1.78 | °C/W |
| Thermal Resistance Junction-PCB | 58.5 | °C/W |
| Gate Threshold Voltage (VGS(th)) | 3-5 | V |
| Input Capacitance (Ciss) | 644 pF | pF |
| Output Capacitance (Coss) | 18 pF | pF |
| Reverse Transfer Capacitance (Crss) | 2.5 pF | pF |
Key Features
- Extremely low RDS(on) of 0.475 Ω (typical) and 0.530 Ω (maximum)
- Low gate charge and input capacitance for excellent switching performance
- 100% avalanche tested for robustness and reliability
- High power handling capability with a continuous drain current of up to 8.5 A at 25°C
- Compact PowerFLAT™ 5x5 package for improved thermal management and reduced footprint
- Wide operating temperature range from -55°C to 150°C
Applications
The STL11N65M5 is particularly suited for various switching applications that require high power and superior efficiency. These include:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial automation and control systems
- High-frequency switching circuits
- Aerospace and defense applications where high reliability is critical
Q & A
- What is the maximum drain-source voltage (VDS) of the STL11N65M5?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STL11N65M5?
The typical on-resistance (RDS(on)) is 0.475 Ω.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 8.5 A.
- What is the thermal resistance junction-case (Rthj-case) of the STL11N65M5?
The thermal resistance junction-case (Rthj-case) is 1.78 °C/W.
- What is the package type of the STL11N65M5?
The package type is PowerFLAT™ 5x5.
- What are the key features of the MDmesh™ M5 technology used in the STL11N65M5?
The MDmesh™ M5 technology offers extremely low RDS(on), low gate charge, and excellent switching performance.
- What are some typical applications for the STL11N65M5?
Typical applications include power supplies, DC-DC converters, motor control, industrial automation, and high-frequency switching circuits.
- What is the maximum operating junction temperature (Tj) of the STL11N65M5?
The maximum operating junction temperature (Tj) is 150°C.
- What is the total dissipation at TC = 25°C for the STL11N65M5?
The total dissipation at TC = 25°C is 70 W.
- Is the STL11N65M5 100% avalanche tested?
