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STL15N65M5
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STMicroelectronics STL15N65M5

Manufacturer No:
STL15N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 10A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STL15N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer high performance and reliability in various power management applications. It features a high voltage rating of 650 V and a low on-resistance (RDS(on)) of 0.335 Ohm typical, making it suitable for high-power switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 10 A
RDS(on) (On-Resistance) 0.335 Ω
VGS(th) (Gate-Source Threshold Voltage) 2 - 4 V
PD (Power Dissipation) 52 W
Package PowerFLAT 5x6 HV

Key Features

  • Extremely low RDS(on) of 0.335 Ohm typical, ensuring minimal power loss during operation.
  • Low gate charge and input capacitance, which enhances switching performance.
  • Excellent switching characteristics, making it ideal for high-frequency applications.
  • 100% avalanche tested, ensuring robustness and reliability under various operating conditions.
  • High voltage rating of 650 V, suitable for applications requiring high voltage handling.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability.
  • Automotive systems, including electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain-source voltage of the STL15N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STL15N65M5?

    The typical on-resistance (RDS(on)) is 0.335 Ohm.

  3. What is the maximum drain current (ID) of the STL15N65M5?

    The maximum drain current (ID) is 10 A.

  4. What package type is the STL15N65M5 available in?

    The STL15N65M5 is available in the PowerFLAT 5x6 HV package.

  5. What are the key features of the STL15N65M5?

    The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.

  6. What are some typical applications of the STL15N65M5?

    Typical applications include power supplies, motor control systems, industrial automation, aerospace, and automotive systems.

  7. What is the gate-source threshold voltage (VGS(th)) of the STL15N65M5?

    The gate-source threshold voltage (VGS(th)) is between 2 and 4 V.

  8. What is the maximum power dissipation (PD) of the STL15N65M5?

    The maximum power dissipation (PD) is 52 W.

  9. Is the STL15N65M5 suitable for high-frequency applications?
  10. Is the STL15N65M5 tested for avalanche robustness?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:375mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Part Number STL15N65M5 STL19N65M5 STL16N65M5 STL17N65M5 STL18N65M5 STL45N65M5 STL11N65M5 STL12N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 2.3A (Ta), 12.5A (Tc) 12A (Tc) 1.8A (Ta), 10A (Tc) 15A (Tc) 3.8A (Ta), 22.5A (Tc) 8.5A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 375mOhm @ 5A, 10V 240mOhm @ 7.5A, 10V 299mOhm @ 6A, 10V 374mOhm @ 5.5A, 10V 240mOhm @ 7.5A, 10V 86mOhm @ 14.5A, 10V 530mOhm @ 4.25A, 10V 530mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 31 nC @ 10 V 31 nC @ 10 V 22 nC @ 10 V 31 nC @ 10 V 82 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 100 V 1240 pF @ 100 V 1250 pF @ 100 V 816 pF @ 100 V 1240 pF @ 100 V 3470 pF @ 100 V 644 pF @ 100 V 644 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 52W (Tc) 2.8W (Ta), 90W (Tc) 3W (Ta), 90W (Tc) 2.8W (Ta), 70W (Tc) 57W (Tc) 2.8W (Ta), 160W (Tc) 70W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) PowerFLAT™ (8x8) PowerFLAT™ (5x5) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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