STL45N65M5
  • Share:

STMicroelectronics STL45N65M5

Manufacturer No:
STL45N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 22.5A PWRFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL45N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)650V
On-Resistance (RDS(on))0.075 (typ.), 0.086 (max.)Ω
Maximum Drain Current (ID)22.5A
Maximum Power Dissipation (PTOT)160W
Gate to Source Voltage (VGS)25V
Input Capacitance3.47nF
Maximum Operating Temperature150°C
Gate Threshold Voltage (VGS(th))3 - 5V

Key Features

  • Extremely low on-resistance (RDS(on)) of 0.075 Ω (typ.) and 0.086 Ω (max.)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • High power handling capability with a maximum drain current of 22.5 A

Applications

The STL45N65M5 is particularly suited for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and automotive electronics
  • High-efficiency power management systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STL45N65M5?
    The maximum drain-source breakdown voltage is 650 V.
  2. What is the typical on-resistance of the STL45N65M5?
    The typical on-resistance is 0.075 Ω.
  3. What is the maximum drain current of the STL45N65M5?
    The maximum drain current is 22.5 A.
  4. What is the maximum power dissipation of the STL45N65M5?
    The maximum power dissipation is 160 W.
  5. What is the maximum operating temperature of the STL45N65M5?
    The maximum operating temperature is 150 °C.
  6. What technology is used in the STL45N65M5?
    The STL45N65M5 uses the MDmesh™ M5 innovative vertical process technology combined with the PowerMESH™ horizontal layout.
  7. Is the STL45N65M5 100% avalanche tested?
    Yes, the STL45N65M5 is 100% avalanche tested.
  8. What are some common applications of the STL45N65M5?
    Common applications include power supplies, DC-DC converters, motor control systems, and high-efficiency power management systems.
  9. What is the gate threshold voltage range of the STL45N65M5?
    The gate threshold voltage range is 3 to 5 V.
  10. What is the input capacitance of the STL45N65M5?
    The input capacitance is 3.47 nF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:86mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3470 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFLAT™ (8x8)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$9.18
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL45N65M5 STL15N65M5 STL42N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 22.5A (Tc) 10A (Tc) 4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 86mOhm @ 14.5A, 10V 375mOhm @ 5A, 10V 79mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 22 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3470 pF @ 100 V 816 pF @ 100 V 4650 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta), 160W (Tc) 52W (Tc) 3W (Ta), 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFLAT™ (8x8) PowerFlat™ (5x6) PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3