PHT6NQ10T,135
  • Share:

Nexperia USA Inc. PHT6NQ10T,135

Manufacturer No:
PHT6NQ10T,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHT6NQ10T,135 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic SOT-223 package. It is designed for high efficiency and reliability in various electronic applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)100 V
Vgs (Gate-Source Voltage)20 V
ID (Continuous Drain Current)3 A
Ptot (Total Power Dissipation at Ta=25°C)1.8 W
Ptot (Total Power Dissipation at Tc=25°C)8.3 W
PackageSOT-223

Key Features

  • Standard level N-channel enhancement mode FET
  • TrenchMOS technology for high efficiency and low on-state resistance
  • High continuous drain current of 3 A
  • High total power dissipation capabilities
  • Compact SOT-223 package for space-saving designs

Applications

  • Power switching and power management in various electronic devices
  • Automotive systems
  • Industrial control and automation
  • Consumer electronics
  • Power supplies and DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the PHT6NQ10T,135? The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of this transistor? The continuous drain current rating is 3 A.
  3. What type of package does the PHT6NQ10T,135 use? It uses a SOT-223 package.
  4. What technology is used in the PHT6NQ10T,135? It uses TrenchMOS technology.
  5. What is the total power dissipation at Ta=25°C? The total power dissipation at Ta=25°C is 1.8 W.
  6. What is the total power dissipation at Tc=25°C? The total power dissipation at Tc=25°C is 8.3 W.
  7. What are some common applications of the PHT6NQ10T,135? Common applications include power switching, automotive systems, industrial control, consumer electronics, and power supplies.
  8. What is the maximum gate-source voltage of the PHT6NQ10T,135? The maximum gate-source voltage is 20 V.
  9. Why is TrenchMOS technology beneficial in this transistor? TrenchMOS technology provides high efficiency and low on-state resistance.
  10. Where can I find detailed specifications for the PHT6NQ10T,135? Detailed specifications can be found on the official Nexperia website or through distributors like Digi-Key and LCSC Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 8.3W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.88
886

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHT6NQ10T,135 PHT2NQ10T,135 PHT4NQ10T,135
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.5A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V 430mOhm @ 1.75A, 10V 250mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 5.1 nC @ 10 V 7.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V 160 pF @ 25 V 300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) 6.25W (Tc) 6.9W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SC-73 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN