Overview
The PH1930AL,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is designed for use in a variety of applications that require high current handling and efficient power management. With its robust design and advanced features, it is well-suited for modern electronic systems that demand reliability and efficiency.
Key Specifications
Parameter | Value |
---|---|
VDS (Drain-Source Voltage) | 30 V |
ID (Continuous Drain Current) | 100 A |
RDS(on) (On-State Drain-Source Resistance) | Typically 1.3 mΩ at VGS = 10 V, ID = 50 A |
VGS(th) (Gate-Source Threshold Voltage) | Typically 2.5 V |
PD (Power Dissipation) | Dependent on package and thermal conditions |
Package | LFPAK56, Power-SO8 |
Key Features
- High continuous drain current of 100 A, making it suitable for high-power applications.
- Low on-state drain-source resistance (RDS(on)) of typically 1.3 mΩ, enhancing efficiency and reducing power losses.
- Compact LFPAK56 and Power-SO8 packaging, which offers excellent thermal performance and space-saving design.
- Robust and reliable operation, suitable for a wide range of applications including automotive, industrial, and consumer electronics.
Applications
The PH1930AL,115 MOSFET is versatile and can be used in various applications, including:
- Automotive systems: For power management in electric vehicles, hybrid vehicles, and other automotive electronics.
- Industrial systems: In motor drives, power supplies, and other high-power industrial equipment.
- Consumer electronics: In power supplies, battery chargers, and other high-current applications.
- Power management systems: For efficient power switching and control in various electronic devices.
Q & A
- What is the maximum continuous drain current of the PH1930AL,115 MOSFET?
The maximum continuous drain current is 100 A. - What is the typical on-state drain-source resistance (RDS(on)) of the PH1930AL,115?
The typical on-state drain-source resistance is 1.3 mΩ at VGS = 10 V, ID = 50 A. - What package types are available for the PH1930AL,115?
The PH1930AL,115 is available in LFPAK56 and Power-SO8 packages. - What are the typical applications for the PH1930AL,115 MOSFET?
It is used in automotive, industrial, and consumer electronics for high-power applications. - What is the maximum drain-source voltage (VDS) for the PH1930AL,115?
The maximum drain-source voltage is 30 V. - What is the gate-source threshold voltage (VGS(th)) for the PH1930AL,115?
The typical gate-source threshold voltage is 2.5 V. - How does the PH1930AL,115 contribute to energy efficiency in electronic systems?
It contributes through its low on-state resistance, which reduces power losses and enhances overall system efficiency. - Is the PH1930AL,115 suitable for high-temperature environments?
Yes, it is designed to operate reliably under various thermal conditions, but specific temperature limits should be checked in the datasheet. - Can the PH1930AL,115 be used in power supply applications?
Yes, it is suitable for use in power supplies due to its high current handling and low on-state resistance. - Where can I find detailed specifications and datasheets for the PH1930AL,115?
Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, and other authorized distributors.