PH1930AL,115
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Nexperia USA Inc. PH1930AL,115

Manufacturer No:
PH1930AL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The PH1930AL,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is designed for use in a variety of applications that require high current handling and efficient power management. With its robust design and advanced features, it is well-suited for modern electronic systems that demand reliability and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)100 A
RDS(on) (On-State Drain-Source Resistance)Typically 1.3 mΩ at VGS = 10 V, ID = 50 A
VGS(th) (Gate-Source Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageLFPAK56, Power-SO8

Key Features

  • High continuous drain current of 100 A, making it suitable for high-power applications.
  • Low on-state drain-source resistance (RDS(on)) of typically 1.3 mΩ, enhancing efficiency and reducing power losses.
  • Compact LFPAK56 and Power-SO8 packaging, which offers excellent thermal performance and space-saving design.
  • Robust and reliable operation, suitable for a wide range of applications including automotive, industrial, and consumer electronics.

Applications

The PH1930AL,115 MOSFET is versatile and can be used in various applications, including:

  • Automotive systems: For power management in electric vehicles, hybrid vehicles, and other automotive electronics.
  • Industrial systems: In motor drives, power supplies, and other high-power industrial equipment.
  • Consumer electronics: In power supplies, battery chargers, and other high-current applications.
  • Power management systems: For efficient power switching and control in various electronic devices.

Q & A

  1. What is the maximum continuous drain current of the PH1930AL,115 MOSFET?
    The maximum continuous drain current is 100 A.
  2. What is the typical on-state drain-source resistance (RDS(on)) of the PH1930AL,115?
    The typical on-state drain-source resistance is 1.3 mΩ at VGS = 10 V, ID = 50 A.
  3. What package types are available for the PH1930AL,115?
    The PH1930AL,115 is available in LFPAK56 and Power-SO8 packages.
  4. What are the typical applications for the PH1930AL,115 MOSFET?
    It is used in automotive, industrial, and consumer electronics for high-power applications.
  5. What is the maximum drain-source voltage (VDS) for the PH1930AL,115?
    The maximum drain-source voltage is 30 V.
  6. What is the gate-source threshold voltage (VGS(th)) for the PH1930AL,115?
    The typical gate-source threshold voltage is 2.5 V.
  7. How does the PH1930AL,115 contribute to energy efficiency in electronic systems?
    It contributes through its low on-state resistance, which reduces power losses and enhances overall system efficiency.
  8. Is the PH1930AL,115 suitable for high-temperature environments?
    Yes, it is designed to operate reliably under various thermal conditions, but specific temperature limits should be checked in the datasheet.
  9. Can the PH1930AL,115 be used in power supply applications?
    Yes, it is suitable for use in power supplies due to its high current handling and low on-state resistance.
  10. Where can I find detailed specifications and datasheets for the PH1930AL,115?
    Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PH1930AL,115 PH1330AL,115 PH1730AL,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 2mOhm @ 15A, 10V 1.3mOhm @ 15A, 10V 1.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 100 nC @ 10 V 77.9 nC @ 10 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 12 V 6227 pF @ 12 V 5057 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SOT-1023, 4-LFPAK SC-100, SOT-669

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