FQD13N10LTM_NBEL001
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onsemi FQD13N10LTM_NBEL001

Manufacturer No:
FQD13N10LTM_NBEL001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD13N10LTM_NBEL001 is a high-performance N-Channel MOSFET produced by onsemi. This component is part of the QFET® series and is known for its advanced planar stripe and DMOS technology, which reduces on-state resistance and provides superior switching performance and high avalanche energy strength. Although the product is currently listed as obsolete, it remains a versatile and reliable choice for various electronic applications. The MOSFET is packaged in a TO-252AA (TO-252-3, DPak) surface mount configuration, making it suitable for a wide range of power management and control systems.

Key Specifications

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 10 A
Pulsed Drain Current (Idm) 40 A
Gate-Source Voltage (Vgs) ±20 V
On-State Resistance (Rds On) @ Id, Vgs 180 mΩ @ 5 A, 10 V
Gate Threshold Voltage (Vgs(th)) @ Id 2 V @ 250 µA
Gate Charge (Qg) @ Vgs 12 nC @ 5 V
Input Capacitance (Ciss) @ Vds 520 pF @ 25 V
Power Dissipation (Max) 2.5 W (Ta), 40 W (Tc)
Operating Temperature Range -55°C to 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252AA (TO-252-3, DPak)

Key Features

  • High Performance: Utilizes advanced planar stripe and DMOS technology to reduce on-state resistance and enhance switching performance.
  • Low On-State Resistance: Rds On of 180 mΩ @ 5 A, 10 V.
  • Low Gate Charge: Typical gate charge of 8.7 nC, facilitating low level gate drive requirements.
  • High Avalanche Energy Strength: 100% avalanche tested with a single pulsed avalanche energy of 95 mJ.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C (TJ).
  • Surface Mount Package: Available in TO-252AA (TO-252-3, DPak) configuration for easy integration into surface mount designs.

Applications

  • Switched Mode Power Supplies: Ideal for use in SMPS due to its high efficiency and low on-state resistance.
  • Audio Amplifiers: Suitable for audio amplifier applications requiring high current handling and low distortion.
  • DC Motor Control: Used in DC motor control systems for efficient and reliable operation.
  • Variable Switching Power Applications: Applicable in various power management systems requiring variable switching capabilities.
  • Synchronous Rectification for ATX 1 Server and Telecom PSU: Effective in synchronous rectification for power supplies in server and telecom systems.
  • Motor Drives and Uninterruptible Power Supplies (UPS): Used in motor drives and UPS systems for reliable power management.
  • Micro Solar Inverter: Suitable for micro solar inverter applications due to its high efficiency and reliability.
  • DC/DC Converters: Used in DC/DC converter applications for efficient power conversion.
  • Power Tools: Applicable in power tools requiring high current handling and efficient power management.
  • Battery Protection Circuit: Used in battery protection circuits to ensure safe and efficient battery operation.

Q & A

  1. What is the drain to source voltage (Vdss) of the FQD13N10LTM_NBEL001 MOSFET?

    The drain to source voltage (Vdss) of the FQD13N10LTM_NBEL001 MOSFET is 100 V.

  2. What is the continuous drain current (Id) of the FQD13N10LTM_NBEL001 at 25°C?

    The continuous drain current (Id) of the FQD13N10LTM_NBEL001 at 25°C is 10 A.

  3. What is the on-state resistance (Rds On) of the FQD13N10LTM_NBEL001?

    The on-state resistance (Rds On) of the FQD13N10LTM_NBEL001 is 180 mΩ @ 5 A, 10 V.

  4. What is the gate charge (Qg) of the FQD13N10LTM_NBEL001?

    The gate charge (Qg) of the FQD13N10LTM_NBEL001 is 12 nC @ 5 V.

  5. What is the operating temperature range of the FQD13N10LTM_NBEL001?

    The operating temperature range of the FQD13N10LTM_NBEL001 is -55°C to 150°C (TJ).

  6. In what package is the FQD13N10LTM_NBEL001 available?

    The FQD13N10LTM_NBEL001 is available in the TO-252AA (TO-252-3, DPak) surface mount package.

  7. What are some common applications of the FQD13N10LTM_NBEL001?

    The FQD13N10LTM_NBEL001 is commonly used in switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  8. Is the FQD13N10LTM_NBEL001 still in production?

    No, the FQD13N10LTM_NBEL001 is listed as obsolete and is no longer in production.

  9. What is the maximum power dissipation of the FQD13N10LTM_NBEL001?

    The maximum power dissipation of the FQD13N10LTM_NBEL001 is 2.5 W (Ta) and 40 W (Tc).

  10. What is the input capacitance (Ciss) of the FQD13N10LTM_NBEL001?

    The input capacitance (Ciss) of the FQD13N10LTM_NBEL001 is 520 pF @ 25 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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