AO3400-5.8A
  • Share:

MDD AO3400-5.8A

Manufacturer No:
AO3400-5.8A
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
MOSFET SOT-23 N Channel 30V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AO3400 is a high-performance N-Channel enhancement mode power MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench MOSFET technology to provide extremely low on-state resistance (RDS(ON)) and high efficiency, making it suitable for various small power switching and load switch applications.

Key Specifications

CharacteristicSymbolMax Unit
Drain-Source VoltageVds30 V
Gate-Source VoltageVgs±12 V
Gate-Threshold VoltageVgs(th)1.45 V
Continuous Drain CurrentId5.8 A
Pulsed Drain CurrentId30 A
Maximum Power DissipationPd1.4 W
Maximum Junction TemperatureTj150 °C
On-State Resistance (RDS(ON)) at Vgs = 10VRds(ON)28 mΩ
Rise Timetr15 nS
Drain-Source CapacitanceCd115 pF
PackageSOT23-3

Key Features

  • Advanced Trench Technology: Utilizes high cell density trench MOSFET technology for ultra-low on-state resistance.
  • Low RDS(ON): Provides extremely low RDS(ON) of 28 mΩ at Vgs = 10V, 33 mΩ at Vgs = 4.5V, and 52 mΩ at Vgs = 2.5V.
  • High Efficiency: Suitable for small power switching and load switch applications due to its high efficiency.
  • Compact Package: Available in the SOT23-3 package, making it ideal for space-constrained designs.
  • RoHS Compliant: Meets RoHS and Green Product requirements for environmental sustainability.

Applications

The AO3400 MOSFET is commonly used in load switching, PWM applications, consumer electronics, and industrial control systems.

Q & A

  • Q: What is the maximum drain-source voltage of the AO3400 MOSFET?
    A: The maximum drain-source voltage (Vds) of the AO3400 MOSFET is 30 V.
  • Q: What is the maximum continuous drain current of the AO3400 MOSFET?
    A: The maximum continuous drain current (Id) of the AO3400 MOSFET is 5.8 A.
  • Q: What is the typical on-state resistance (RDS(ON)) of the AO3400 MOSFET at Vgs = 10V?
    A: The typical on-state resistance (RDS(ON)) of the AO3400 MOSFET at Vgs = 10V is 28 mΩ.
  • Q: What is the maximum junction temperature of the AO3400 MOSFET?
    A: The maximum junction temperature (Tj) of the AO3400 MOSFET is 150 °C.
  • Q: Is the AO3400 MOSFET RoHS compliant?
    A: Yes, the AO3400 MOSFET is RoHS compliant and meets Green Product requirements.
  • Q: What package type is the AO3400 MOSFET available in?
    A: The AO3400 MOSFET is available in the SOT23-3 package.
  • Q: What are some common applications of the AO3400 MOSFET?
    A: The AO3400 MOSFET is commonly used in load switching, PWM applications, consumer electronics, and industrial control systems.
  • Q: What is the gate-source threshold voltage (Vgs(th)) of the AO3400 MOSFET?
    A: The gate-source threshold voltage (Vgs(th)) of the AO3400 MOSFET is 1.45 V.
  • Q: What is the rise time (tr) of the AO3400 MOSFET?
    A: The rise time (tr) of the AO3400 MOSFET is 15 nS.
  • Q: What is the maximum power dissipation (Pd) of the AO3400 MOSFET?
    A: The maximum power dissipation (Pd) of the AO3400 MOSFET is 1.4 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3.3V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 15 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.41
447

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SM712
SM712
MDD
TVS DIODE 12V/7V, 20V/12V SOT23
1N4148W T4
1N4148W T4
MDD
SWITCHING SOD-123, 100V
BAV21W
BAV21W
MDD
SWITCHING 250V 250MA SOD-123
1N4007WS
1N4007WS
MDD
RECTIFIER DIODE 1KV 1A SOD-323
1N4007-T/B
1N4007-T/B
MDD
General Diode DO-41 1KV 1A
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
S8050
S8050
MDD
TRANS NPN 25V 0.5A SOT23
BC848B
BC848B
MDD
TRANS NPN 30V 0.1A SOT23
SS8050
SS8050
MDD
TRANS NPN 25V 1.5A SOT23
BC846B
BC846B
MDD
TRANS NPN 65V 0.1A SOT23
2N7002K
2N7002K
MDD
MOSFET SOT-23 N Channel 60V
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V