AO3400-5.8A
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MDD AO3400-5.8A

Manufacturer No:
AO3400-5.8A
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
MOSFET SOT-23 N Channel 30V
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The AO3400 is a high-performance N-Channel enhancement mode power MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench MOSFET technology to provide extremely low on-state resistance (RDS(ON)) and high efficiency, making it suitable for various small power switching and load switch applications.

Key Specifications

CharacteristicSymbolMax Unit
Drain-Source VoltageVds30 V
Gate-Source VoltageVgs±12 V
Gate-Threshold VoltageVgs(th)1.45 V
Continuous Drain CurrentId5.8 A
Pulsed Drain CurrentId30 A
Maximum Power DissipationPd1.4 W
Maximum Junction TemperatureTj150 °C
On-State Resistance (RDS(ON)) at Vgs = 10VRds(ON)28 mΩ
Rise Timetr15 nS
Drain-Source CapacitanceCd115 pF
PackageSOT23-3

Key Features

  • Advanced Trench Technology: Utilizes high cell density trench MOSFET technology for ultra-low on-state resistance.
  • Low RDS(ON): Provides extremely low RDS(ON) of 28 mΩ at Vgs = 10V, 33 mΩ at Vgs = 4.5V, and 52 mΩ at Vgs = 2.5V.
  • High Efficiency: Suitable for small power switching and load switch applications due to its high efficiency.
  • Compact Package: Available in the SOT23-3 package, making it ideal for space-constrained designs.
  • RoHS Compliant: Meets RoHS and Green Product requirements for environmental sustainability.

Applications

The AO3400 MOSFET is commonly used in load switching, PWM applications, consumer electronics, and industrial control systems.

Q & A

  • Q: What is the maximum drain-source voltage of the AO3400 MOSFET?
    A: The maximum drain-source voltage (Vds) of the AO3400 MOSFET is 30 V.
  • Q: What is the maximum continuous drain current of the AO3400 MOSFET?
    A: The maximum continuous drain current (Id) of the AO3400 MOSFET is 5.8 A.
  • Q: What is the typical on-state resistance (RDS(ON)) of the AO3400 MOSFET at Vgs = 10V?
    A: The typical on-state resistance (RDS(ON)) of the AO3400 MOSFET at Vgs = 10V is 28 mΩ.
  • Q: What is the maximum junction temperature of the AO3400 MOSFET?
    A: The maximum junction temperature (Tj) of the AO3400 MOSFET is 150 °C.
  • Q: Is the AO3400 MOSFET RoHS compliant?
    A: Yes, the AO3400 MOSFET is RoHS compliant and meets Green Product requirements.
  • Q: What package type is the AO3400 MOSFET available in?
    A: The AO3400 MOSFET is available in the SOT23-3 package.
  • Q: What are some common applications of the AO3400 MOSFET?
    A: The AO3400 MOSFET is commonly used in load switching, PWM applications, consumer electronics, and industrial control systems.
  • Q: What is the gate-source threshold voltage (Vgs(th)) of the AO3400 MOSFET?
    A: The gate-source threshold voltage (Vgs(th)) of the AO3400 MOSFET is 1.45 V.
  • Q: What is the rise time (tr) of the AO3400 MOSFET?
    A: The rise time (tr) of the AO3400 MOSFET is 15 nS.
  • Q: What is the maximum power dissipation (Pd) of the AO3400 MOSFET?
    A: The maximum power dissipation (Pd) of the AO3400 MOSFET is 1.4 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3.3V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 15 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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