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2N7002K
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MDD 2N7002K

Manufacturer No:
2N7002K
Manufacturer:
MDD
Package:
Tape & Reel (TR)
Description:
MOSFET SOT-23 N Channel 60V
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The 2N7002K is an N-channel enhancement mode field-effect transistor (FET) designed for high-efficiency power management applications. It is manufactured by companies such as Onsemi and Diodes Incorporated, not MDD. This MOSFET is known for its low on-state resistance, fast switching speed, and low input/output leakage, making it suitable for a variety of electronic systems.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Gate-Source Voltage (VGS)±20V
Drain Current (ID)300 mA
Gate Threshold Voltage (VGS(th))1.0 - 2.5V
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10V2 Ω
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 4.5V3 Ω
Input Capacitance (Ciss)50 pF
Output Capacitance (Coss)15 pF
Reverse Transfer Capacitance (Crss)6 pF
Turn-On Delay Time (tD(ON))5 ns
Turn-Off Delay Time (tD(OFF))30 ns

Key Features

  • Low on-state resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • ESD protection up to 2kV (HBM) and 2kV (CDM)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free
  • Ultra-small surface mount package (SOT-23)

Applications

  • Motor controls
  • Power management functions
  • Backlighting
  • Logic level translators
  • DC-DC converters
  • Battery-operated systems
  • Solid-state relays and drivers
  • Displays, lamps, solenoids, and memories

Q & A

  1. What is the maximum drain-source voltage of the 2N7002K MOSFET?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the gate-source threshold voltage range of the 2N7002K?
    The gate-source threshold voltage (VGS(th)) ranges from 1.0 to 2.5 V.
  3. What is the maximum continuous drain current of the 2N7002K?
    The maximum continuous drain current (ID) is 300 mA.
  4. What is the typical on-state resistance of the 2N7002K at VGS = 10V?
    The typical on-state resistance (RDS(ON)) at VGS = 10V is 2 Ω.
  5. Is the 2N7002K ESD protected?
    Yes, the 2N7002K is ESD protected up to 2kV (HBM) and 2kV (CDM).
  6. What package type is the 2N7002K available in?
    The 2N7002K is available in a SOT-23 package.
  7. What are some common applications of the 2N7002K?
    Common applications include motor controls, power management functions, backlighting, logic level translators, DC-DC converters, and battery-operated systems.
  8. Is the 2N7002K RoHS compliant?
    Yes, the 2N7002K is totally lead-free and fully RoHS compliant.
  9. What is the maximum junction temperature of the 2N7002K?
    The maximum junction temperature (Tj) is 150°C.
  10. How fast is the switching speed of the 2N7002K?
    The 2N7002K has a fast switching speed with a turn-on delay time of 5 ns and a turn-off delay time of 30 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:900mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.8 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Part Number 2N7002K 2N7002W 2N7002KW 2N7002L 2N7002T 2N7002KA 2N7002 2N7002A 2N7002CK 2N7002E
Manufacturer MDD Diotec Semiconductor onsemi onsemi onsemi Rectron USA NTE Electronics, Inc Diotec Semiconductor Nexperia USA Inc. Vishay Siliconix
Product Status Active Active Active Active Active Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V - 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 115mA (Ta) 310mA (Ta) 115mA (Ta) 115mA (Ta) 115mA (Ta) 115mA (Ta) 280mA (Ta) - 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 300mA, 10V 13.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 3Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V - 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.1V @ 250µA 2.5V @ 250µA 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.31 nC @ 10 V - - - - - - - - 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±30V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.8 pF @ 10 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V - 21 pF @ 5 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 500mW (Ta) 200mW (Ta) 350mW (Ta) 200mW (Ta) 200mW (Ta) 225mW (Ta) 200mW (Ta) 350mW (Ta) - 350mW (Ta)
Operating Temperature -55°C ~ 150°C 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package SOT-23 SOT-323 SOT-323 SOT-23-3 SC-89-3 SOT-23 SOT-23-3 SOT-23-3 (TO-236) - SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3

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