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2N7002
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NTE Electronics, Inc 2N7002

Manufacturer No:
2N7002
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
MOSFET N-CHANNEL 60V 115MA SOT23
Delivery:
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Product Introduction

Overview

The 2N7002 is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications. The device is available in a small surface-mount package and is totally lead-free and fully RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 170 mA
Continuous Drain Current (VGS = 10V, TA = +85°C) ID 120 mA
Continuous Drain Current (VGS = 10V, TA = +100°C) ID 105 mA
Maximum Body Diode Forward Current IS 0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
Total Power Dissipation PD 370 mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT-23-3)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage of the 2N7002 MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current at 25°C with VGS = 10V?

    The continuous drain current (ID) at 25°C with VGS = 10V is 170mA.

  3. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 348°C/W.

  4. Is the 2N7002 MOSFET RoHS compliant?

    Yes, the 2N7002 MOSFET is totally lead-free and fully RoHS compliant.

  5. What are the typical applications of the 2N7002 MOSFET?

    The typical applications include motor control and power management functions.

  6. What is the maximum body diode forward current?

    The maximum body diode forward current (IS) is 0.5A.

  7. What is the pulsed drain current rating?

    The pulsed drain current (IDM) is 800mA for a 10µs pulse with a duty cycle of 1%.

  8. What is the operating and storage temperature range?

    The operating and storage temperature range is -55°C to +150°C.

  9. What is the gate-source voltage range?

    The gate-source voltage (VGSS) range is ±20V continuous and ±40V pulsed.

  10. What package types are available for the 2N7002 MOSFET?

    The 2N7002 MOSFET is available in SOT-23-3, TO-236-3, and SC-59 packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002 2N7002A 2N7002K 2N7002L 2N7002E 2N7000
Manufacturer NTE Electronics, Inc Diotec Semiconductor MDD onsemi Vishay Siliconix NTE Electronics, Inc
Product Status Active Active Active Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 280mA (Ta) 500mA (Ta) 115mA (Ta) 240mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 900mOhm @ 300mA, 10V 7.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - 0.31 nC @ 10 V - 0.6 nC @ 4.5 V -
Vgs (Max) ±20V ±30V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23.8 pF @ 10 V 50 pF @ 25 V 21 pF @ 5 V 60 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 500mW (Ta) 200mW (Ta) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package SOT-23-3 SOT-23-3 (TO-236) SOT-23 SOT-23-3 SOT-23-3 (TO-236) TO-92
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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