English
2N7002
  • Share:

NTE Electronics, Inc 2N7002

Manufacturer No:
2N7002
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
MOSFET N-CHANNEL 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002 is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications. The device is available in a small surface-mount package and is totally lead-free and fully RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 170 mA
Continuous Drain Current (VGS = 10V, TA = +85°C) ID 120 mA
Continuous Drain Current (VGS = 10V, TA = +100°C) ID 105 mA
Maximum Body Diode Forward Current IS 0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
Total Power Dissipation PD 370 mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT-23-3)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage of the 2N7002 MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current at 25°C with VGS = 10V?

    The continuous drain current (ID) at 25°C with VGS = 10V is 170mA.

  3. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 348°C/W.

  4. Is the 2N7002 MOSFET RoHS compliant?

    Yes, the 2N7002 MOSFET is totally lead-free and fully RoHS compliant.

  5. What are the typical applications of the 2N7002 MOSFET?

    The typical applications include motor control and power management functions.

  6. What is the maximum body diode forward current?

    The maximum body diode forward current (IS) is 0.5A.

  7. What is the pulsed drain current rating?

    The pulsed drain current (IDM) is 800mA for a 10µs pulse with a duty cycle of 1%.

  8. What is the operating and storage temperature range?

    The operating and storage temperature range is -55°C to +150°C.

  9. What is the gate-source voltage range?

    The gate-source voltage (VGSS) range is ±20V continuous and ±40V pulsed.

  10. What package types are available for the 2N7002 MOSFET?

    The 2N7002 MOSFET is available in SOT-23-3, TO-236-3, and SC-59 packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.28
2,384

Please send RFQ , we will respond immediately.

Same Series
2N7000BU
2N7000BU
MOSFET N-CH 60V 200MA TO92-3
2N7000
2N7000
MOSFET N-CHANNEL 60V 200MA TO92
NDS7002A
NDS7002A
MOSFET N-CH 60V 280MA SOT-23
2N7000TA
2N7000TA
MOSFET N-CH 60V 200MA TO92-3
2N7000-D75Z
2N7000-D75Z
MOSFET N-CH 60V 200MA TO92-3
2N7000-D26Z
2N7000-D26Z
MOSFET N-CH 60V 200MA TO92-3
2N7000-D74Z
2N7000-D74Z
MOSFET N-CH 60V 200MA TO92-3
2N7002MTF
2N7002MTF
MOSFET N-CH 60V 115MA SOT23-3
2N7002_L99Z
2N7002_L99Z
MOSFET N-CH 60V 115MA SOT-23
2N7002_NB9G002
2N7002_NB9G002
MOSFET N-CH 60V 115MA SOT-23
NDS7002A_D87Z
NDS7002A_D87Z
MOSFET N-CH 60V 280MA SOT-23
NDS7002A_NB9GGTXA
NDS7002A_NB9GGTXA
MOSFET N-CH 60V 280MA SOT-23

Similar Products

Part Number 2N7002 2N7002A 2N7002K 2N7002L 2N7002E 2N7000
Manufacturer NTE Electronics, Inc Diotec Semiconductor MDD onsemi Vishay Siliconix NTE Electronics, Inc
Product Status Active Active Active Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 280mA (Ta) 500mA (Ta) 115mA (Ta) 240mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 900mOhm @ 300mA, 10V 7.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - 0.31 nC @ 10 V - 0.6 nC @ 4.5 V -
Vgs (Max) ±20V ±30V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23.8 pF @ 10 V 50 pF @ 25 V 21 pF @ 5 V 60 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 500mW (Ta) 200mW (Ta) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package SOT-23-3 SOT-23-3 (TO-236) SOT-23 SOT-23-3 SOT-23-3 (TO-236) TO-92
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

1N5352B
1N5352B
NTE Electronics, Inc
DIODE ZENER 15V 5W AXIAL
1N5347B
1N5347B
NTE Electronics, Inc
DIODE ZENER 10V 5W AXIAL
1N5363B
1N5363B
NTE Electronics, Inc
DIODE ZENER 30V 5W AXIAL
1N5383B
1N5383B
NTE Electronics, Inc
DIODE ZENER 150V 5W AXIAL
MMBT2222A
MMBT2222A
NTE Electronics, Inc
TRANS NPN 40V 1A SOT23-3
2N5416
2N5416
NTE Electronics, Inc
TRANS PNP 300V 1A TO39
2N3055
2N3055
NTE Electronics, Inc
TRANS NPN 60V 15A TO204
TIP147
TIP147
NTE Electronics, Inc
TRANS PNP 100V 10A TO218
BUX48A
BUX48A
NTE Electronics, Inc
TRANS NPN 450V 15A TO3
TIP120
TIP120
NTE Electronics, Inc
TRANS NPN DARL 60V TO220-3
TIP41C
TIP41C
NTE Electronics, Inc
TRANS NPN 100V 6A TO220-3
LM317T
LM317T
NTE Electronics, Inc
IC REG LIN POS ADJ 1.5A TO220-3