Overview
The 2N7002MTF is an N-Channel Small Signal MOSFET produced by Fairchild Semiconductor, now part of onsemi. This device is designed for general-purpose switching and amplification applications. It features a low on-state resistance, fast switching times, and an extended safe operating area, making it suitable for a variety of electronic circuits.
Key Specifications
| Characteristic | Symbol | Max. | Typ. | Units | Test Condition |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | - | V | VGS = 0V, ID = 250µA |
| Gate Threshold Voltage | VGS(th) | 1.2 | - | V | VDS = VGS, ID = 250µA |
| Continuous Drain Current (TC=25℃) | ID | 115 | - | mA | - |
| Continuous Drain Current (TC=100℃) | ID | 73 | - | mA | - |
| Drain Current-Pulsed | IDM | 800 | - | mA | - |
| Gate-to-Source Voltage | VGS | ±20 | - | V | - |
| Total Power Dissipation (TC=25℃) | PD | 625 | - | mW | - |
| On-State Drain-Source Resistance | RDS(on) | 5.0 | - | Ω | VGS = 10V, ID = 0.5A |
| Forward Transconductance | gfs | 25 | - | S | VDS = 15V, VGS = 10V |
| Input Capacitance | Ciss | 50 | - | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
Key Features
- Low on-state resistance (RDS(on) = 5.0 Ω)
- Fast switching times
- Extended safe operating area
- Improved inductive ruggedness
- Lower input capacitance
- Improved high temperature reliability
Applications
The 2N7002MTF is suitable for a variety of applications including general-purpose switching, amplification, and as a discrete component in electronic circuits. It is particularly useful in low-power switching circuits, audio amplifiers, and other small signal applications.
Q & A
- What is the maximum drain-to-source breakdown voltage of the 2N7002MTF?
The maximum drain-to-source breakdown voltage is 60 V. - What is the typical on-state resistance of the 2N7002MTF?
The typical on-state resistance (RDS(on)) is 5.0 Ω. - What is the continuous drain current at 25°C for the 2N7002MTF?
The continuous drain current at 25°C is 115 mA. - What is the gate threshold voltage of the 2N7002MTF?
The gate threshold voltage (VGS(th)) is typically 1.2 V. - What are the key features of the 2N7002MTF?
The key features include low on-state resistance, fast switching times, extended safe operating area, improved inductive ruggedness, lower input capacitance, and improved high temperature reliability. - What are some common applications of the 2N7002MTF?
Common applications include general-purpose switching, amplification, and use in low-power switching circuits and audio amplifiers. - What is the maximum total power dissipation at 25°C for the 2N7002MTF?
The maximum total power dissipation at 25°C is 625 mW. - What is the input capacitance of the 2N7002MTF?
The input capacitance (Ciss) is typically 50 pF. - Is the 2N7002MTF suitable for high-temperature applications?
Yes, it has improved high temperature reliability. - What is the package type of the 2N7002MTF?
The package type is SOT-23.
