Overview
The 2N7000-D26Z is an N-channel enhancement mode field effect transistor (FET) produced by onsemi. This device is part of the 2N7000 series, which includes the 2N7000, 2N7002, and NDS7002A models. The 2N7000-D26Z is fabricated using onsemi's proprietary high cell density DMOS technology, designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
This transistor is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage (RGS ≤ 1 MΩ) | VDGR | 60 | V |
| Gate-Source Voltage - Continuous | VGSS | ±20 | V |
| Gate-Source Voltage - Non-Repetitive (tp < 50 ms) | VGSS | ±40 | V |
| Maximum Drain Current - Continuous | ID | 200 | mA |
| Maximum Drain Current - Pulsed | ID | 500 | mA |
| Maximum Power Dissipation Derated above 25°C | PD | 400 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 312.5 | °C/W |
| Gate Threshold Voltage | VGS(th) | 0.8 - 3 | V |
| Static Drain-Source On-Resistance | RDS(on) | 1.2 - 5 | Ω |
| Drain-Source On-Voltage | VDS(on) | 0.6 - 2.5 | V |
| Forward Transconductance | gFS | 100 - 320 | mS |
Key Features
- High Density Cell Design for Low RDS(on): Minimizes on-state resistance for efficient operation.
- Voltage Controlled Small Signal Switch: Suitable for various switching applications.
- Rugged and Reliable: Ensures long-term performance and durability.
- High Saturation Current Capability: Supports high current requirements.
- ESD Protection Level: HBM > 100 V, CDM > 2 kV for enhanced protection against electrostatic discharge.
- Pb-Free and Halogen Free: Compliant with environmental regulations.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors in various applications.
- Power MOSFET Gate Drivers: Used to drive the gates of power MOSFETs in power management circuits.
- Switching Applications: Suitable for general-purpose switching in electronic circuits.
- Low-Voltage, Low-Current Applications: Applicable in scenarios requiring low voltage and current, such as in consumer electronics and automotive systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) for the 2N7000-D26Z?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the gate-source voltage threshold (VGS(th)) for this transistor?
The gate-source voltage threshold (VGS(th)) ranges from 0.8 V to 3 V.
- What is the maximum continuous drain current (ID) for the 2N7000-D26Z?
The maximum continuous drain current (ID) is 200 mA.
- What is the thermal resistance, junction to ambient (RθJA), for this device?
The thermal resistance, junction to ambient (RθJA), is 312.5 °C/W.
- Is the 2N7000-D26Z Pb-Free and Halogen Free?
- What are some common applications for the 2N7000-D26Z?
- What is the maximum power dissipation for the 2N7000-D26Z?
The maximum power dissipation is 400 mW, derated above 25°C.
- What is the forward transconductance (gFS) for this transistor?
The forward transconductance (gFS) ranges from 100 mS to 320 mS.
- Does the 2N7000-D26Z have ESD protection?
- What is the package type for the 2N7000-D26Z?
The package type is TO-92.
