NDS7002A_NB9GGTXA
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onsemi NDS7002A_NB9GGTXA

Manufacturer No:
NDS7002A_NB9GGTXA
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NDS7002A_NB9GGTXA is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is part of the NDS7002A series, which is designed using onsemi’s proprietary high cell density DMOS technology. The NDS7002A_NB9GGTXA is optimized for low-voltage, low-current applications and is known for its rugged, reliable, and fast switching performance.

Key Specifications

Parameter Value Unit
VDSS (Drain-Source Voltage) 60 V
VDGR (Drain-Gate Voltage) 60 V
VGSS (Gate-Source Voltage) - Continuous ±20 V
VGSS (Gate-Source Voltage) - Non Repetitive (tp < 50 ms) ±40 V
ID (Maximum Drain Current) - Continuous 280 mA
ID (Maximum Drain Current) - Pulsed 1500 mA
PD (Maximum Power Dissipation) 300 mW
TJ, TSTG (Operating and Storage Temperature Range) -65 to 150 °C
VGS(th) (Gate Threshold Voltage) 1 to 2.5 V
RDS(on) (Static Drain-Source On-Resistance) 1.2 to 3.5 Ω
ton (Turn-On Time) 20 ns
toff (Turn-Off Time) 20 ns

Key Features

  • High Density Cell Design for Low RDS(on): Minimizes on-state resistance for efficient operation.
  • Voltage Controlled Small Signal Switch: Ideal for applications requiring precise voltage control.
  • Rugged and Reliable: Designed to provide durable performance in various environments.
  • High Saturation Current Capability: Supports high current requirements in applications.
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV for enhanced protection against electrostatic discharge.
  • Pb-Free and Halogen Free: Compliant with environmental regulations.

Applications

  • Small Servo Motor Control: Suitable for controlling small servo motors due to its low-voltage and low-current capabilities.
  • Power MOSFET Gate Drivers: Used to drive the gates of power MOSFETs efficiently.
  • Switching Applications: Ideal for various switching applications requiring fast and reliable performance.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the NDS7002A_NB9GGTXA?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous maximum drain current (ID) for the NDS7002A_NB9GGTXA?

    The continuous maximum drain current (ID) is 280 mA.

  3. What is the gate threshold voltage (VGS(th)) range for the NDS7002A_NB9GGTXA?

    The gate threshold voltage (VGS(th)) range is from 1 to 2.5 V.

  4. What is the typical turn-on time (ton) and turn-off time (toff) for the NDS7002A_NB9GGTXA?

    The typical turn-on time (ton) and turn-off time (toff) are both 20 ns.

  5. Is the NDS7002A_NB9GGTXA Pb-Free and Halogen Free?
  6. What are some common applications for the NDS7002A_NB9GGTXA?
  7. What is the operating and storage temperature range for the NDS7002A_NB9GGTXA?
  8. What is the maximum power dissipation (PD) for the NDS7002A_NB9GGTXA?
  9. Does the NDS7002A_NB9GGTXA have ESD protection? 100 V, CDM > 2 kV.

  10. What is the static drain-source on-resistance (RDS(on)) for the NDS7002A_NB9GGTXA?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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