2N7002_L99Z
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onsemi 2N7002_L99Z

Manufacturer No:
2N7002_L99Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002_L99Z is an N-channel enhancement-mode field effect transistor (FET) produced by onsemi. This device is part of the 2N7002 series, known for its high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 60 V
Drain-Gate Voltage (VDGR) 60 V
Gate-Source Voltage (VGSS) - Continuous ±20 V
Gate-Source Voltage (VGSS) - Non-Repetitive (tp < 50 ms) ±40 V
Maximum Drain Current - Continuous 115 mA
Maximum Drain Current - Pulsed 800 mA
Maximum Power Dissipation 200 mW
Operating and Storage Temperature Range -65 to 150 °C
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mA 1.2 - 7.5 Ω
Forward Transconductance (gFS) at VDS = 10 V, ID = 200 mA 80 - 320 mS
Input Capacitance (Ciss) at VDS = 25 V, VGS = 0 V, f = 1.0 MHz 20 - 50 pF

Key Features

  • High density cell design for low RDS(on)
  • Voltage controlled small signal switch
  • Rugged and reliable with high saturation current capability
  • ESD protection level: HBM > 100 V, CDM > 2 kV
  • Pb-free and halogen-free package, RoHS compliant
  • Low input capacitance and fast switching speeds
  • Integral source-drain diode
  • High input impedance and high gain

Applications

  • Motor controls and small servo motor control
  • Power MOSFET gate drivers
  • Switching applications
  • Converters and amplifiers
  • Power supply circuits
  • Drivers for relays, solenoids, lamps, hammers, displays, memories, and bipolar transistors
  • Battery operated systems and solid-state relays

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002_L99Z?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous maximum drain current of the 2N7002_L99Z?

    The continuous maximum drain current is 115 mA.

  3. What is the typical static drain-source on-resistance (RDS(on)) of the 2N7002_L99Z?

    The typical static drain-source on-resistance (RDS(on)) is between 1.2 and 7.5 Ω at VGS = 10 V, ID = 500 mA.

  4. Is the 2N7002_L99Z Pb-free and halogen-free?
  5. What are the typical applications of the 2N7002_L99Z?

    The 2N7002_L99Z is typically used in motor controls, power MOSFET gate drivers, switching applications, converters, amplifiers, power supply circuits, and drivers for various devices.

  6. What is the operating temperature range of the 2N7002_L99Z?

    The operating and storage temperature range is -65 to 150°C.

  7. Does the 2N7002_L99Z have ESD protection? 100 V and CDM > 2 kV.

  8. What is the forward transconductance (gFS) of the 2N7002_L99Z?

    The forward transconductance (gFS) is between 80 and 320 mS at VDS = 10 V, ID = 200 mA.

  9. Is the 2N7002_L99Z suitable for high-speed circuits?
  10. What package types are available for the 2N7002_L99Z?

    The 2N7002_L99Z is available in various packages, including TO-92 and SOT-23.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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