Overview
The 2N7002_NB9G002, produced by onsemi, is an N-Channel enhancement mode field effect transistor (FET) designed using onsemi’s proprietary high cell density DMOS technology. This product is optimized to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and can handle continuous drain currents up to 200 mA and pulsed currents up to 800 mA.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 60 | V |
| Gate-Source Voltage (VGSS) - Continuous | ±20 | V |
| Gate-Source Voltage (VGSS) - Non-Repetitive (tp < 50 ms) | ±40 | V |
| Maximum Drain Current - Continuous | 200 | mA |
| Maximum Drain Current - Pulsed | 800 | mA |
| Maximum Power Dissipation | 200 | mW |
| Operating and Storage Temperature Range | -55 to 150 | °C |
| Gate Threshold Voltage (VGS(th)) | 1 to 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mA | 1.2 to 7.5 | mΩ |
Key Features
- High density cell design for low RDS(on)
- Voltage controlled small signal switch
- Rugged and reliable performance
- High saturation current capability
- ESD protection level: HBM > 100 V, CDM > 2 kV
- Pb-free and halogen-free package
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Other switching applications
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002_NB9G002?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous gate-source voltage (VGSS) rating?
The continuous gate-source voltage (VGSS) rating is ±20 V.
- What is the maximum continuous drain current?
The maximum continuous drain current is 200 mA.
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 800 mA.
- What is the operating temperature range?
The operating temperature range is -55 to 150 °C.
- What is the typical gate threshold voltage (VGS(th))?
The typical gate threshold voltage (VGS(th)) is between 1 to 2.5 V.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 500 mA?
The static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 500 mA is between 1.2 to 7.5 mΩ.
- Is the 2N7002_NB9G002 Pb-free and halogen-free?
Yes, the 2N7002_NB9G002 is Pb-free and halogen-free.
- What are some common applications for the 2N7002_NB9G002?
Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the ESD protection level of the 2N7002_NB9G002?
The ESD protection level is HBM > 100 V, CDM > 2 kV.
