2SK4177-DL-1E
  • Share:

onsemi 2SK4177-DL-1E

Manufacturer No:
2SK4177-DL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1500V 2A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK4177-DL-1E is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications and features a robust set of specifications that make it suitable for various power management and switching tasks. The MOSFET is packaged in a TO-263-2L (D2PAK) package, which is known for its compact size and good thermal dissipation characteristics.

Although the 2SK4177-DL-1E is currently listed as obsolete, it remains a significant component in legacy systems and designs where high voltage and moderate current handling are required.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Breakdown Voltage VDSS Ta=25°C 1500 V
Gate-to-Source Voltage VGSS Ta=25°C ±20 V
Continuous Drain Current ID Tc=25°C 2 A
Pulse Drain Current IDP PW≤10μs, duty cycle≤1% 4 A
Allowable Power Dissipation PD Tc=25°C 80 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10-13 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 380 pF
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 40 pF
Turn-ON Delay Time td(on) 12 ns
Rise Time tr 37 ns
Turn-OFF Delay Time td(off) 152 ns
Fall Time tf 59 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC

Key Features

  • High Voltage Capability: The 2SK4177-DL-1E can handle a drain-to-source breakdown voltage of up to 1500V, making it suitable for high-voltage applications.
  • Low On-State Resistance: With a typical on-state resistance (RDS(on)) of 10Ω at VGS=10V, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast switching times, including a turn-on delay time of 12ns, rise time of 37ns, turn-off delay time of 152ns, and fall time of 59ns.
  • Compact Packaging: The TO-263-2L package is compact and offers good thermal dissipation, making it ideal for space-constrained designs.
  • High Current Handling: The MOSFET can handle continuous drain currents up to 2A and pulse currents up to 4A under specific conditions.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems where high reliability and performance are required.
  • Aerospace and Defense: Given its high voltage and current ratings, it can be used in aerospace and defense applications where robust performance is critical.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the 2SK4177-DL-1E?

    The maximum drain-to-source breakdown voltage is 1500V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 2A.

  3. What is the typical on-state resistance of the 2SK4177-DL-1E?

    The typical on-state resistance (RDS(on)) is 10Ω at VGS=10V.

  4. What is the package type of the 2SK4177-DL-1E?

    The package type is TO-263-2L (D2PAK).

  5. What are the fast switching times of this MOSFET?

    The turn-on delay time is 12ns, rise time is 37ns, turn-off delay time is 152ns, and fall time is 59ns.

  6. Is the 2SK4177-DL-1E still in production?

    No, the 2SK4177-DL-1E is listed as obsolete and is no longer manufactured.

  7. What is the input capacitance of the 2SK4177-DL-1E?

    The input capacitance (Ciss) is typically 380pF at VDS=30V and f=1MHz.

  8. What are the storage temperature limits for this MOSFET?

    The storage temperature range is -55°C to +150°C.

  9. What is the total gate charge of the 2SK4177-DL-1E?

    The total gate charge (Qg) is typically 37.5nC at VDS=200V, VGS=10V, and ID=2A.

  10. What are some common applications for the 2SK4177-DL-1E?

    Common applications include high-voltage power supplies, motor control, industrial automation, and aerospace and defense systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
493

Please send RFQ , we will respond immediately.

Same Series
2SK4177-DL-E
2SK4177-DL-E
MOSFET N-CH 1500V 2A SMP-FD
2SK4177-E
2SK4177-E
MOSFET N-CH 1500V 2A SMP-FD

Similar Products

Part Number 2SK4177-DL-1E 2SK4177-DL-E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V 13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 30 V 380 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 80W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-2 SMP-FD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC