2SK4177-DL-1E
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onsemi 2SK4177-DL-1E

Manufacturer No:
2SK4177-DL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1500V 2A TO263-2
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2SK4177-DL-1E is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications and features a robust set of specifications that make it suitable for various power management and switching tasks. The MOSFET is packaged in a TO-263-2L (D2PAK) package, which is known for its compact size and good thermal dissipation characteristics.

Although the 2SK4177-DL-1E is currently listed as obsolete, it remains a significant component in legacy systems and designs where high voltage and moderate current handling are required.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Breakdown Voltage VDSS Ta=25°C 1500 V
Gate-to-Source Voltage VGSS Ta=25°C ±20 V
Continuous Drain Current ID Tc=25°C 2 A
Pulse Drain Current IDP PW≤10μs, duty cycle≤1% 4 A
Allowable Power Dissipation PD Tc=25°C 80 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10-13 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 380 pF
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 40 pF
Turn-ON Delay Time td(on) 12 ns
Rise Time tr 37 ns
Turn-OFF Delay Time td(off) 152 ns
Fall Time tf 59 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC

Key Features

  • High Voltage Capability: The 2SK4177-DL-1E can handle a drain-to-source breakdown voltage of up to 1500V, making it suitable for high-voltage applications.
  • Low On-State Resistance: With a typical on-state resistance (RDS(on)) of 10Ω at VGS=10V, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast switching times, including a turn-on delay time of 12ns, rise time of 37ns, turn-off delay time of 152ns, and fall time of 59ns.
  • Compact Packaging: The TO-263-2L package is compact and offers good thermal dissipation, making it ideal for space-constrained designs.
  • High Current Handling: The MOSFET can handle continuous drain currents up to 2A and pulse currents up to 4A under specific conditions.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems where high reliability and performance are required.
  • Aerospace and Defense: Given its high voltage and current ratings, it can be used in aerospace and defense applications where robust performance is critical.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the 2SK4177-DL-1E?

    The maximum drain-to-source breakdown voltage is 1500V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 2A.

  3. What is the typical on-state resistance of the 2SK4177-DL-1E?

    The typical on-state resistance (RDS(on)) is 10Ω at VGS=10V.

  4. What is the package type of the 2SK4177-DL-1E?

    The package type is TO-263-2L (D2PAK).

  5. What are the fast switching times of this MOSFET?

    The turn-on delay time is 12ns, rise time is 37ns, turn-off delay time is 152ns, and fall time is 59ns.

  6. Is the 2SK4177-DL-1E still in production?

    No, the 2SK4177-DL-1E is listed as obsolete and is no longer manufactured.

  7. What is the input capacitance of the 2SK4177-DL-1E?

    The input capacitance (Ciss) is typically 380pF at VDS=30V and f=1MHz.

  8. What are the storage temperature limits for this MOSFET?

    The storage temperature range is -55°C to +150°C.

  9. What is the total gate charge of the 2SK4177-DL-1E?

    The total gate charge (Qg) is typically 37.5nC at VDS=200V, VGS=10V, and ID=2A.

  10. What are some common applications for the 2SK4177-DL-1E?

    Common applications include high-voltage power supplies, motor control, industrial automation, and aerospace and defense systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
2SK4177-DL-E
2SK4177-DL-E
MOSFET N-CH 1500V 2A SMP-FD
2SK4177-DL-1E
2SK4177-DL-1E
MOSFET N-CH 1500V 2A TO263-2

Similar Products

Part Number 2SK4177-DL-1E 2SK4177-DL-E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V 13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 30 V 380 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 80W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-2 SMP-FD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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