2SK4177-DL-1E
  • Share:

onsemi 2SK4177-DL-1E

Manufacturer No:
2SK4177-DL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1500V 2A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK4177-DL-1E is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications and features a robust set of specifications that make it suitable for various power management and switching tasks. The MOSFET is packaged in a TO-263-2L (D2PAK) package, which is known for its compact size and good thermal dissipation characteristics.

Although the 2SK4177-DL-1E is currently listed as obsolete, it remains a significant component in legacy systems and designs where high voltage and moderate current handling are required.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Breakdown Voltage VDSS Ta=25°C 1500 V
Gate-to-Source Voltage VGSS Ta=25°C ±20 V
Continuous Drain Current ID Tc=25°C 2 A
Pulse Drain Current IDP PW≤10μs, duty cycle≤1% 4 A
Allowable Power Dissipation PD Tc=25°C 80 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10-13 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 380 pF
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 40 pF
Turn-ON Delay Time td(on) 12 ns
Rise Time tr 37 ns
Turn-OFF Delay Time td(off) 152 ns
Fall Time tf 59 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC

Key Features

  • High Voltage Capability: The 2SK4177-DL-1E can handle a drain-to-source breakdown voltage of up to 1500V, making it suitable for high-voltage applications.
  • Low On-State Resistance: With a typical on-state resistance (RDS(on)) of 10Ω at VGS=10V, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast switching times, including a turn-on delay time of 12ns, rise time of 37ns, turn-off delay time of 152ns, and fall time of 59ns.
  • Compact Packaging: The TO-263-2L package is compact and offers good thermal dissipation, making it ideal for space-constrained designs.
  • High Current Handling: The MOSFET can handle continuous drain currents up to 2A and pulse currents up to 4A under specific conditions.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems where high reliability and performance are required.
  • Aerospace and Defense: Given its high voltage and current ratings, it can be used in aerospace and defense applications where robust performance is critical.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the 2SK4177-DL-1E?

    The maximum drain-to-source breakdown voltage is 1500V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 2A.

  3. What is the typical on-state resistance of the 2SK4177-DL-1E?

    The typical on-state resistance (RDS(on)) is 10Ω at VGS=10V.

  4. What is the package type of the 2SK4177-DL-1E?

    The package type is TO-263-2L (D2PAK).

  5. What are the fast switching times of this MOSFET?

    The turn-on delay time is 12ns, rise time is 37ns, turn-off delay time is 152ns, and fall time is 59ns.

  6. Is the 2SK4177-DL-1E still in production?

    No, the 2SK4177-DL-1E is listed as obsolete and is no longer manufactured.

  7. What is the input capacitance of the 2SK4177-DL-1E?

    The input capacitance (Ciss) is typically 380pF at VDS=30V and f=1MHz.

  8. What are the storage temperature limits for this MOSFET?

    The storage temperature range is -55°C to +150°C.

  9. What is the total gate charge of the 2SK4177-DL-1E?

    The total gate charge (Qg) is typically 37.5nC at VDS=200V, VGS=10V, and ID=2A.

  10. What are some common applications for the 2SK4177-DL-1E?

    Common applications include high-voltage power supplies, motor control, industrial automation, and aerospace and defense systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
493

Please send RFQ , we will respond immediately.

Same Series
2SK4177-DL-E
2SK4177-DL-E
MOSFET N-CH 1500V 2A SMP-FD
2SK4177-DL-1E
2SK4177-DL-1E
MOSFET N-CH 1500V 2A TO263-2

Similar Products

Part Number 2SK4177-DL-1E 2SK4177-DL-E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V 13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 30 V 380 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 80W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-2 SMP-FD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5