Overview
The 2SK4177-DL-1E is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications and features a robust set of specifications that make it suitable for various power management and switching tasks. The MOSFET is packaged in a TO-263-2L (D2PAK) package, which is known for its compact size and good thermal dissipation characteristics.
Although the 2SK4177-DL-1E is currently listed as obsolete, it remains a significant component in legacy systems and designs where high voltage and moderate current handling are required.
Key Specifications
Parameter | Symbol | Conditions | Ratings | Unit |
---|---|---|---|---|
Drain-to-Source Breakdown Voltage | VDSS | Ta=25°C | 1500 | V |
Gate-to-Source Voltage | VGSS | Ta=25°C | ±20 | V |
Continuous Drain Current | ID | Tc=25°C | 2 | A |
Pulse Drain Current | IDP | PW≤10μs, duty cycle≤1% | 4 | A |
Allowable Power Dissipation | PD | Tc=25°C | 80 | W |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C | |
Static Drain-to-Source On-State Resistance | RDS(on) | ID=1A, VGS=10V | 10-13 | Ω |
Input Capacitance | Ciss | VDS=30V, f=1MHz | 380 | pF |
Output Capacitance | Coss | 70 | pF | |
Reverse Transfer Capacitance | Crss | 40 | pF | |
Turn-ON Delay Time | td(on) | 12 | ns | |
Rise Time | tr | 37 | ns | |
Turn-OFF Delay Time | td(off) | 152 | ns | |
Fall Time | tf | 59 | ns | |
Total Gate Charge | Qg | VDS=200V, VGS=10V, ID=2A | 37.5 | nC |
Key Features
- High Voltage Capability: The 2SK4177-DL-1E can handle a drain-to-source breakdown voltage of up to 1500V, making it suitable for high-voltage applications.
- Low On-State Resistance: With a typical on-state resistance (RDS(on)) of 10Ω at VGS=10V, this MOSFET minimizes power losses during operation.
- Fast Switching Times: The device features fast switching times, including a turn-on delay time of 12ns, rise time of 37ns, turn-off delay time of 152ns, and fall time of 59ns.
- Compact Packaging: The TO-263-2L package is compact and offers good thermal dissipation, making it ideal for space-constrained designs.
- High Current Handling: The MOSFET can handle continuous drain currents up to 2A and pulse currents up to 4A under specific conditions.
Applications
- Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
- Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
- Industrial Automation: Applicable in various industrial automation systems where high reliability and performance are required.
- Aerospace and Defense: Given its high voltage and current ratings, it can be used in aerospace and defense applications where robust performance is critical.
Q & A
- What is the maximum drain-to-source breakdown voltage of the 2SK4177-DL-1E?
The maximum drain-to-source breakdown voltage is 1500V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 2A.
- What is the typical on-state resistance of the 2SK4177-DL-1E?
The typical on-state resistance (RDS(on)) is 10Ω at VGS=10V.
- What is the package type of the 2SK4177-DL-1E?
The package type is TO-263-2L (D2PAK).
- What are the fast switching times of this MOSFET?
The turn-on delay time is 12ns, rise time is 37ns, turn-off delay time is 152ns, and fall time is 59ns.
- Is the 2SK4177-DL-1E still in production?
No, the 2SK4177-DL-1E is listed as obsolete and is no longer manufactured.
- What is the input capacitance of the 2SK4177-DL-1E?
The input capacitance (Ciss) is typically 380pF at VDS=30V and f=1MHz.
- What are the storage temperature limits for this MOSFET?
The storage temperature range is -55°C to +150°C.
- What is the total gate charge of the 2SK4177-DL-1E?
The total gate charge (Qg) is typically 37.5nC at VDS=200V, VGS=10V, and ID=2A.
- What are some common applications for the 2SK4177-DL-1E?
Common applications include high-voltage power supplies, motor control, industrial automation, and aerospace and defense systems.