Overview
The 2SK4177-DL-E is a high-performance N-Channel Silicon MOSFET produced by onsemi. This device is designed for general-purpose switching applications and is known for its low ON-resistance, low input capacitance, and ultrahigh-speed switching capabilities. The MOSFET is fabricated using the high reliability HVP (High Voltage Process) technology, ensuring robust and reliable operation in various electronic systems.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | - | 1500 | V |
| Gate-to-Source Voltage | VGSS | - | ±20 | V |
| Drain Current (DC) | ID | - | 2 | A |
| Drain Current (Pulse) | IDP | PW≤10μs, duty cycle≤1% | 4 | A |
| Allowable Power Dissipation | PD | Tc=25°C | 80 | W |
| Channel Temperature | Tch | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 to +150 | °C |
| Avalanche Energy (Single Pulse) | EAS | VDD=50V, L=20mH, IAV=2A | 41 | mJ |
| Input Capacitance (Ciss) | Ciss | Vds=30V | 380 | pF |
| Gate Charge (Qg) | Qg | Vgs=10V | 37.5 | nC |
| Static Drain-to-Source On-State Resistance (Rds(on)) | Rds(on) | Vds=200V, Vgs=10V, Id=2A | 13 | Ω |
| Package / Case | - | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
Key Features
- Low ON-Resistance: The 2SK4177-DL-E features a low static drain-to-source on-state resistance (Rds(on)) of 13 Ω at Vgs=10V and Id=2A, ensuring minimal power loss during operation.
- Low Input Capacitance: With an input capacitance (Ciss) of 380 pF at Vds=30V, this MOSFET is optimized for high-speed switching applications.
- Ultrahigh-Speed Switching: The device is designed for ultrahigh-speed switching, making it suitable for applications requiring fast switching times.
- High Reliability HVP Process: Fabricated using the high reliability HVP process, this MOSFET ensures robust and reliable operation in various electronic systems.
- High Voltage and Current Handling: The MOSFET can handle a drain-to-source voltage (VDSS) of 1500V and a continuous drain current (ID) of 2A, making it suitable for high-power applications.
Applications
- General-Purpose Switching: The 2SK4177-DL-E is a general-purpose switching device, suitable for a wide range of switching applications in electronic systems.
- Industrial Control Circuits: Its high voltage and current handling capabilities make it ideal for use in industrial control circuits and power management systems.
- Power Supplies and Converters: The MOSFET can be used in power supplies, DC-DC converters, and other power management circuits due to its high efficiency and reliability.
- Automotive and High-Reliability Systems: Although not specifically automotive-qualified, its high reliability and robustness make it a candidate for use in demanding environments).
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the 2SK4177-DL-E?
The maximum drain-to-source voltage (VDSS) is 1500V).
- What is the maximum continuous drain current (ID) of the 2SK4177-DL-E?
The maximum continuous drain current (ID) is 2A).
- What is the typical input capacitance (Ciss) of the 2SK4177-DL-E?
The typical input capacitance (Ciss) is 380 pF at Vds=30V).
- What is the maximum gate-to-source voltage (VGSS) of the 2SK4177-DL-E?
The maximum gate-to-source voltage (VGSS) is ±20V).
- What is the package type of the 2SK4177-DL-E?
The package types include TO-263-3, D²Pak (2 Leads + Tab), and TO-263AB).
- What is the maximum allowable power dissipation (PD) of the 2SK4177-DL-E?
The maximum allowable power dissipation (PD) is 80W at Tc=25°C).
- What is the channel temperature (Tch) rating of the 2SK4177-DL-E?
The channel temperature (Tch) rating is 150°C).
- Is the 2SK4177-DL-E RoHS compliant?
Yes, the 2SK4177-DL-E is lead-free and RoHS compliant).
- What is the typical gate charge (Qg) of the 2SK4177-DL-E?
The typical gate charge (Qg) is 37.5 nC at Vgs=10V).
- What are some common applications of the 2SK4177-DL-E?
Common applications include general-purpose switching, industrial control circuits, power supplies, and DC-DC converters).
