Overview
The STF38N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it highly suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Maximum Drain-Source Voltage) | 650 | V |
| VGS (Maximum Gate-Source Voltage) | ±25 | V |
| ID (Maximum Drain Current) | 30 | A |
| RDS(on) (Maximum Drain-Source On-State Resistance) | 0.095 | Ω |
| Tj (Maximum Junction Temperature) | 150 | °C |
| Pd (Maximum Power Dissipation) | 35 | W |
| Qg (Total Gate Charge) | 71 | nC |
| tr (Rise Time) | 9 | nS |
| Coss (Output Capacitance) | 74 | pF |
| Package | TO-220FP |
Key Features
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
- Worldwide best RDS(on) * area
- Innovative proprietary vertical process technology combined with PowerMESH™ horizontal layout structure
Applications
The STF38N65M5 is particularly suited for switching applications due to its high power density, outstanding efficiency, and excellent switching performance.
Q & A
- What is the maximum drain-source voltage of the STF38N65M5?
The maximum drain-source voltage is 650 V.
- What is the maximum gate-source voltage of the STF38N65M5?
The maximum gate-source voltage is ±25 V.
- What is the maximum drain current of the STF38N65M5?
The maximum drain current is 30 A.
- What is the typical on-state resistance of the STF38N65M5?
The typical on-state resistance is 0.095 Ω.
- What is the maximum junction temperature of the STF38N65M5?
The maximum junction temperature is 150 °C.
- What is the maximum power dissipation of the STF38N65M5?
The maximum power dissipation is 35 W.
- What package types are available for the STF38N65M5?
The STF38N65M5 is available in the TO-220FP package.
- What are the key features of the STF38N65M5?
The key features include higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.
- What applications is the STF38N65M5 suited for?
The STF38N65M5 is suited for switching applications due to its high power density and efficiency.
- What is the total gate charge of the STF38N65M5?
The total gate charge is 71 nC.
- What is the rise time of the STF38N65M5?
The rise time is 9 nS.
