STF8N65M5
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STMicroelectronics STF8N65M5

Manufacturer No:
STF8N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 7A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF8N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer high performance and reliability in various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-State Resistance)0.56 Ohm (typ.)
ID (Drain Current)7 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220, TO-220FP

Key Features

  • MDmesh M5 technology for high efficiency and low on-state resistance
  • High voltage rating of 650 V
  • Low RDS(on) of 0.56 Ohm (typ.) for reduced power losses
  • High current capability of 7 A
  • Wide operating temperature range from -55°C to 150°C
  • Avalanche ruggedness and high switching performance

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and consumer electronics
  • Automotive systems (where applicable)
  • Renewable energy systems such as solar and wind power

Q & A

  1. What is the maximum drain-source voltage of the STF8N65M5?
    The maximum drain-source voltage is 650 V.
  2. What is the typical on-state resistance of the STF8N65M5?
    The typical on-state resistance is 0.56 Ohm.
  3. What is the maximum drain current of the STF8N65M5?
    The maximum drain current is 7 A.
  4. What is the operating junction temperature range of the STF8N65M5?
    The operating junction temperature range is from -55°C to 150°C.
  5. In which packages is the STF8N65M5 available?
    The STF8N65M5 is available in TO-220 and TO-220FP packages.
  6. What technology is used in the STF8N65M5?
    The STF8N65M5 uses MDmesh M5 technology.
  7. What are some common applications of the STF8N65M5?
    Common applications include power supplies, DC-DC converters, motor control, and industrial electronics.
  8. Is the STF8N65M5 suitable for automotive applications?
    While it is not specifically marked as automotive-grade, it can be used in certain automotive systems where its specifications meet the requirements.
  9. What is the total power dissipation of the STF8N65M5?
    The total power dissipation is dependent on the package and thermal conditions.
  10. Does the STF8N65M5 have avalanche ruggedness?
    Yes, the STF8N65M5 has avalanche ruggedness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF8N65M5 STF38N65M5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V 95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 100 V 3000 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 35W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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