STD8N65M5
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STMicroelectronics STD8N65M5

Manufacturer No:
STD8N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 7A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD8N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.

The STD8N65M5 is available in a DPAK (TO-252) package and is part of a family that includes the STB8N65M5 and STF8N65M5, each with different packaging options. These MOSFETs are characterized by their excellent switching performance, low gate charge, and input capacitance, as well as being 100% avalanche tested.

Key Specifications

Parameter Value Unit
VDS @ TJ max. 710 V
RDS(on) max. 0.60 Ω
ID 7 A
PTOT 70 W
Gate Input Resistance (Rg) 2 - 8 Ω
Total Gate Charge (Qg) 15 nC
Output Capacitance (Coss) 18 pF
Reverse Transfer Capacitance (Crss) 2 pF
Turn-off Delay Time (td(off)) 50 ns

Key Features

  • Extremely low RDS(on)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • Available in DPAK (TO-252) package
  • ECOPACK compliant for environmental sustainability

Applications

The STD8N65M5 is particularly suited for switching applications that demand high power and superior efficiency. These include but are not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Industrial and automotive applications requiring robust and efficient power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD8N65M5?

    The maximum drain-source voltage (VDS) is 710 V.

  2. What is the maximum on-resistance (RDS(on)) of the STD8N65M5?

    The maximum on-resistance (RDS(on)) is 0.60 Ω.

  3. What is the maximum continuous drain current (ID) of the STD8N65M5?

    The maximum continuous drain current (ID) is 7 A.

  4. What are the key features of the STD8N65M5?

    The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and being 100% avalanche tested.

  5. In what package is the STD8N65M5 available?

    The STD8N65M5 is available in a DPAK (TO-252) package.

  6. What are some typical applications for the STD8N65M5?

    Typical applications include power supplies, DC-DC converters, motor control and drive systems, and high-frequency switching circuits.

  7. Is the STD8N65M5 environmentally compliant?
  8. What is the total gate charge (Qg) of the STD8N65M5?

    The total gate charge (Qg) is 15 nC.

  9. What is the turn-off delay time (td(off)) of the STD8N65M5?

    The turn-off delay time (td(off)) is 50 ns.

  10. Where can I find detailed mechanical data for the DPAK package?

    Detailed mechanical data for the DPAK package can be found in the datasheet, specifically in the package information section.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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