STH15NB50FI
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STMicroelectronics STH15NB50FI

Manufacturer No:
STH15NB50FI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 10.5A ISOWAT218
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH15NB50FI is a high-performance N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) designed by STMicroelectronics. This device utilizes the advanced PowerMESH™ technology, which incorporates a proprietary edge termination structure and a new patent-pending strip layout. These innovations result in exceptional electrical characteristics, including low on-resistance, high avalanche capability, and minimized gate charge. The STH15NB50FI is packaged in both TO-247 and ISOWATT218 formats, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Symbol Value Unit
Drain-source Voltage (VGS = 0) VDS 500 V
Gate-source Voltage VGS ± 30 V
Drain Current (continuous) at Tc = 25°C ID 10.5 A
Drain Current (continuous) at Tc = 100°C ID 6.6 A
Drain Current (pulsed) IDM 58.4 A
Total Dissipation at Tc = 25°C Ptot 80 W
Static Drain-source On Resistance RDS(on) < 0.36 Ω
Gate Threshold Voltage VGS(th) 3 - 5 V
Max. Operating Junction Temperature Tj 150 °C
Thermal Resistance Junction-case Rthj-case 1.56 °C/W

Key Features

  • High voltage MESH OVERLAY process for outstanding performance.
  • Extremely high dv/dt capability.
  • ± 30V gate to source voltage rating.
  • 100% avalanche tested.
  • Very low intrinsic capacitances.
  • Gate charge minimized.
  • Exceptional avalanche and dv/dt capabilities.
  • Unrivalled gate charge and switching characteristics.

Applications

  • High current, high speed switching applications.
  • Switch mode power supplies (SMPS).
  • DC-AC converters for welding equipment.
  • Uninterruptible power supplies (UPS).
  • Motor drive applications.

Q & A

  1. What is the maximum drain-source voltage of the STH15NB50FI MOSFET?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current at 25°C for the STH15NB50FI?

    The continuous drain current (ID) at 25°C is 10.5 A.

  3. What is the gate-source voltage rating for the STH15NB50FI?

    The gate-source voltage (VGS) rating is ± 30 V.

  4. What is the maximum operating junction temperature for the STH15NB50FI?

    The maximum operating junction temperature (Tj) is 150°C.

  5. What are the typical applications of the STH15NB50FI MOSFET?

    Typical applications include high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies (UPS), and motor drive applications.

  6. What is the thermal resistance junction-case for the STH15NB50FI in the ISOWATT218 package?

    The thermal resistance junction-case (Rthj-case) is 1.56 °C/W.

  7. Is the STH15NB50FI 100% avalanche tested?
  8. What is the static drain-source on resistance (RDS(on)) of the STH15NB50FI?

    The static drain-source on resistance (RDS(on)) is less than 0.36 Ω.

  9. What is the gate threshold voltage (VGS(th)) range for the STH15NB50FI?

    The gate threshold voltage (VGS(th)) range is 3 to 5 V.

  10. Is the STH15NB50FI still in production?

    No, the STH15NB50FI is no longer manufactured and is considered obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOWATT-218
Package / Case:ISOWATT-218-3
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