STH15NB50FI
  • Share:

STMicroelectronics STH15NB50FI

Manufacturer No:
STH15NB50FI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 10.5A ISOWAT218
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH15NB50FI is a high-performance N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) designed by STMicroelectronics. This device utilizes the advanced PowerMESH™ technology, which incorporates a proprietary edge termination structure and a new patent-pending strip layout. These innovations result in exceptional electrical characteristics, including low on-resistance, high avalanche capability, and minimized gate charge. The STH15NB50FI is packaged in both TO-247 and ISOWATT218 formats, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Symbol Value Unit
Drain-source Voltage (VGS = 0) VDS 500 V
Gate-source Voltage VGS ± 30 V
Drain Current (continuous) at Tc = 25°C ID 10.5 A
Drain Current (continuous) at Tc = 100°C ID 6.6 A
Drain Current (pulsed) IDM 58.4 A
Total Dissipation at Tc = 25°C Ptot 80 W
Static Drain-source On Resistance RDS(on) < 0.36 Ω
Gate Threshold Voltage VGS(th) 3 - 5 V
Max. Operating Junction Temperature Tj 150 °C
Thermal Resistance Junction-case Rthj-case 1.56 °C/W

Key Features

  • High voltage MESH OVERLAY process for outstanding performance.
  • Extremely high dv/dt capability.
  • ± 30V gate to source voltage rating.
  • 100% avalanche tested.
  • Very low intrinsic capacitances.
  • Gate charge minimized.
  • Exceptional avalanche and dv/dt capabilities.
  • Unrivalled gate charge and switching characteristics.

Applications

  • High current, high speed switching applications.
  • Switch mode power supplies (SMPS).
  • DC-AC converters for welding equipment.
  • Uninterruptible power supplies (UPS).
  • Motor drive applications.

Q & A

  1. What is the maximum drain-source voltage of the STH15NB50FI MOSFET?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current at 25°C for the STH15NB50FI?

    The continuous drain current (ID) at 25°C is 10.5 A.

  3. What is the gate-source voltage rating for the STH15NB50FI?

    The gate-source voltage (VGS) rating is ± 30 V.

  4. What is the maximum operating junction temperature for the STH15NB50FI?

    The maximum operating junction temperature (Tj) is 150°C.

  5. What are the typical applications of the STH15NB50FI MOSFET?

    Typical applications include high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies (UPS), and motor drive applications.

  6. What is the thermal resistance junction-case for the STH15NB50FI in the ISOWATT218 package?

    The thermal resistance junction-case (Rthj-case) is 1.56 °C/W.

  7. Is the STH15NB50FI 100% avalanche tested?
  8. What is the static drain-source on resistance (RDS(on)) of the STH15NB50FI?

    The static drain-source on resistance (RDS(on)) is less than 0.36 Ω.

  9. What is the gate threshold voltage (VGS(th)) range for the STH15NB50FI?

    The gate threshold voltage (VGS(th)) range is 3 to 5 V.

  10. Is the STH15NB50FI still in production?

    No, the STH15NB50FI is no longer manufactured and is considered obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOWATT-218
Package / Case:ISOWATT-218-3
0 Remaining View Similar

In Stock

-
234

Please send RFQ , we will respond immediately.

Same Series
STW15NB50
STW15NB50
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN