IRF5305PBF
  • Share:

Infineon Technologies IRF5305PBF

Manufacturer No:
IRF5305PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 55V 31A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5305PBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is part of the fifth generation HEXFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is housed in a TO-220AB package, which is widely preferred for commercial and industrial applications due to its low thermal resistance and cost-effectiveness. The device is shipped in tubes, with 50 units per tube.

Key Specifications

Parameter Value Units
Fet Type P-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 55 V
Drain-Source On Resistance-Max (Rds(on)) 0.06 Ω
Rated Power Dissipation 110 W
Gate Charge (Qg) 63 nC
Gate-Source Voltage-Max (Vgss) 20 V
Drain Current 31 A
Turn-on Delay Time 14 ns
Turn-off Delay Time 39 ns
Rise Time 66 ns
Fall Time 63 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4 V
Technology Silicon
Height - Max 8.77 mm
Length 10.54 mm
Input Capacitance 1200 pF

Key Features

  • Advanced Process Technology: Utilizes fifth generation HEXFET technology for low on-resistance per silicon area.
  • Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions.
  • 175°C Operating Temperature: High operating temperature range for reliability in demanding applications.
  • Fast Switching: Quick turn-on and turn-off times enhance efficiency and performance.
  • P-Channel: Suitable for a variety of applications requiring P-Channel MOSFETs.
  • Fully Avalanche Rated: Capable of withstanding high energy pulses.
  • Lead-Free: Compliant with environmental regulations.

Applications

The IRF5305PBF is versatile and can be used in a wide range of applications, including:

  • DC Motors: For motor control and drive systems.
  • Inverters: In power conversion and inverter circuits.
  • SMPS (Switch-Mode Power Supplies): For efficient power supply designs.
  • Lighting: In lighting control and power management systems.
  • Load Switches: For controlling and switching loads in various circuits.
  • Battery Powered Applications: In devices and systems powered by batteries.

Q & A

  1. What is the drain-to-source voltage rating of the IRF5305PBF?

    The drain-to-source voltage (Vdss) rating is 55V.

  2. What is the maximum drain current of the IRF5305PBF?

    The maximum drain current is 31A.

  3. What is the on-resistance of the IRF5305PBF?

    The maximum on-resistance (Rds(on)) is 0.06Ω.

  4. What is the operating temperature range of the IRF5305PBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type does the IRF5305PBF come in?

    The IRF5305PBF comes in a TO-220AB package.

  6. Is the IRF5305PBF lead-free?

    Yes, the IRF5305PBF is lead-free.

  7. What are the key features of the IRF5305PBF?

    Key features include advanced process technology, dynamic dv/dt rating, fast switching, and full avalanche rating.

  8. What are some common applications for the IRF5305PBF?

    Common applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.

  9. How many units are shipped per tube?

    There are 50 units shipped per tube.

  10. What is the gate-source threshold voltage of the IRF5305PBF?

    The gate-source threshold voltage is 4V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.59
474

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5305PBF IRF530NPBF IRF530PBF IRF530SPBF IRF5305SPBF IRF5305LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Obsolete
FET Type P-Channel N-Channel N-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 100 V 100 V 100 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 17A (Tc) 14A (Tc) 14A (Tc) 31A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V 90mOhm @ 9A, 10V 160mOhm @ 8.4A, 10V 160mOhm @ 8.4A, 10V 60mOhm @ 16A, 10V 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 37 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V 63 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 920 pF @ 25 V 670 pF @ 25 V 670 pF @ 25 V 1200 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 70W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAW 56 E6433
BAW 56 E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
TLE6251DST
TLE6251DST
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN