IRF5305PBF
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Infineon Technologies IRF5305PBF

Manufacturer No:
IRF5305PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 55V 31A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF5305PBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is part of the fifth generation HEXFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is housed in a TO-220AB package, which is widely preferred for commercial and industrial applications due to its low thermal resistance and cost-effectiveness. The device is shipped in tubes, with 50 units per tube.

Key Specifications

Parameter Value Units
Fet Type P-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 55 V
Drain-Source On Resistance-Max (Rds(on)) 0.06 Ω
Rated Power Dissipation 110 W
Gate Charge (Qg) 63 nC
Gate-Source Voltage-Max (Vgss) 20 V
Drain Current 31 A
Turn-on Delay Time 14 ns
Turn-off Delay Time 39 ns
Rise Time 66 ns
Fall Time 63 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4 V
Technology Silicon
Height - Max 8.77 mm
Length 10.54 mm
Input Capacitance 1200 pF

Key Features

  • Advanced Process Technology: Utilizes fifth generation HEXFET technology for low on-resistance per silicon area.
  • Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions.
  • 175°C Operating Temperature: High operating temperature range for reliability in demanding applications.
  • Fast Switching: Quick turn-on and turn-off times enhance efficiency and performance.
  • P-Channel: Suitable for a variety of applications requiring P-Channel MOSFETs.
  • Fully Avalanche Rated: Capable of withstanding high energy pulses.
  • Lead-Free: Compliant with environmental regulations.

Applications

The IRF5305PBF is versatile and can be used in a wide range of applications, including:

  • DC Motors: For motor control and drive systems.
  • Inverters: In power conversion and inverter circuits.
  • SMPS (Switch-Mode Power Supplies): For efficient power supply designs.
  • Lighting: In lighting control and power management systems.
  • Load Switches: For controlling and switching loads in various circuits.
  • Battery Powered Applications: In devices and systems powered by batteries.

Q & A

  1. What is the drain-to-source voltage rating of the IRF5305PBF?

    The drain-to-source voltage (Vdss) rating is 55V.

  2. What is the maximum drain current of the IRF5305PBF?

    The maximum drain current is 31A.

  3. What is the on-resistance of the IRF5305PBF?

    The maximum on-resistance (Rds(on)) is 0.06Ω.

  4. What is the operating temperature range of the IRF5305PBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type does the IRF5305PBF come in?

    The IRF5305PBF comes in a TO-220AB package.

  6. Is the IRF5305PBF lead-free?

    Yes, the IRF5305PBF is lead-free.

  7. What are the key features of the IRF5305PBF?

    Key features include advanced process technology, dynamic dv/dt rating, fast switching, and full avalanche rating.

  8. What are some common applications for the IRF5305PBF?

    Common applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.

  9. How many units are shipped per tube?

    There are 50 units shipped per tube.

  10. What is the gate-source threshold voltage of the IRF5305PBF?

    The gate-source threshold voltage is 4V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF5305PBF IRF530NPBF IRF530PBF IRF530SPBF IRF5305SPBF IRF5305LPBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Obsolete
FET Type P-Channel N-Channel N-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 100 V 100 V 100 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 17A (Tc) 14A (Tc) 14A (Tc) 31A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V 90mOhm @ 9A, 10V 160mOhm @ 8.4A, 10V 160mOhm @ 8.4A, 10V 60mOhm @ 16A, 10V 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 37 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V 63 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 920 pF @ 25 V 670 pF @ 25 V 670 pF @ 25 V 1200 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 70W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 110W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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