IRF530NPBF
  • Share:

Infineon Technologies IRF530NPBF

Manufacturer No:
IRF530NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 17A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF530NPBF is a 100V single N-channel HEXFET power MOSFET produced by Infineon Technologies. It is packaged in a TO-220AB through-hole configuration, making it suitable for a wide range of applications. This MOSFET is part of the IR MOSFET family, which utilizes proven silicon processes to offer high performance and reliability. The device is optimized for low-frequency applications and features advanced process technology, dynamic dv/dt rating, and fast switching capabilities.

Key Specifications

Parameter Min. Typ. Max. Units Conditions
Drain to Source Voltage (Vds) - - 100 V -
Gate to Source Voltage (Vgs) - - ±20 V -
Continuous Drain Current (Id) - - 17 A Vgs = 10V, TJ = 25°C
Pulsed Drain Current (Idm) - - 60 A TJ = 25°C
Power Dissipation (Pd) - - 70 W TJ = 25°C
On Resistance (Rds(on)) - - 0.09 Ω Vgs = 10V
Gate Source Threshold Voltage (Vgs(th)) - - 4 V -
Operating Junction Temperature (TJ) -55 - 175 °C -
Storage Temperature Range (TSTG) -55 - 175 °C -

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • Advanced Process Technology: Achieves extremely low on-resistance per silicon area and dynamic dv/dt rating.
  • Fast Switching and Fully Avalanche Rated: Ensures high efficiency and reliability in various applications.
  • High Current Rating: Supports continuous drain current of 17A and pulsed drain current of 60A.
  • Industry Standard Package: TO-220AB through-hole package allows for easy design and drop-in replacement).
  • Wide Availability: Optimized for broad availability from distribution partners).
  • High Performance in Low Frequency Applications: Suitable for applications switching below 100kHz).

Applications

  • DC Motors and Inverters: Ideal for motor control and inverter applications due to its high current and low on-resistance).
  • Switch Mode Power Supplies (SMPS): Used in power management systems requiring high efficiency and reliability).
  • Lighting and Load Switches: Suitable for lighting control and load switching applications).
  • Battery Powered Applications: Applicable in battery-powered devices requiring efficient power management).
  • Industrial and Consumer Electronics: Used in various industrial and consumer electronic devices for power management).

Q & A

  1. What is the maximum drain to source voltage (Vds) of the IRF530NPBF?

    The maximum drain to source voltage (Vds) is 100V).

  2. What is the continuous drain current (Id) of the IRF530NPBF at 25°C?

    The continuous drain current (Id) is 17A at Vgs = 10V and TJ = 25°C).

  3. What is the on-resistance (Rds(on)) of the IRF530NPBF?

    The on-resistance (Rds(on)) is 0.09Ω at Vgs = 10V).

  4. What is the operating junction temperature range of the IRF530NPBF?

    The operating junction temperature range is from -55°C to 175°C).

  5. Is the IRF530NPBF fully avalanche rated?

    Yes, the IRF530NPBF is fully avalanche rated).

  6. What type of package does the IRF530NPBF come in?

    The IRF530NPBF comes in a TO-220AB through-hole package).

  7. What is the maximum gate to source voltage (Vgs) of the IRF530NPBF?

    The maximum gate to source voltage (Vgs) is ±20V).

  8. Is the IRF530NPBF RoHS compliant?

    Yes, the IRF530NPBF is RoHS compliant).

  9. What are some typical applications of the IRF530NPBF?

    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications).

  10. What is the power dissipation (Pd) of the IRF530NPBF at 25°C?

    The power dissipation (Pd) is 70W at TJ = 25°C).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.13
563

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF530NPBF IRF540NPBF IRF530PBF IRF530SPBF IRF530NSPBF IRF520NPBF IRF5305PBF
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 33A (Tc) 14A (Tc) 14A (Tc) 17A (Tc) 9.7A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V 160mOhm @ 8.4A, 10V 160mOhm @ 8.4A, 10V 90mOhm @ 9A, 10V 200mOhm @ 5.7A, 10V 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 71 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V 37 nC @ 10 V 25 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V 1960 pF @ 25 V 670 pF @ 25 V 670 pF @ 25 V 920 pF @ 25 V 330 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 70W (Tc) 130W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 70W (Tc) 48W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS16UE6727HTSA1
BAS16UE6727HTSA1
Infineon Technologies
DIODE GP 80V 100MA SC74
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC860BWH6327XTSA1
BC860BWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCX5410E6327
BCX5410E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC857CB5003XT
BC857CB5003XT
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A