IRF540NPBF
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Infineon Technologies IRF540NPBF

Manufacturer No:
IRF540NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NPBF is a Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is packaged in a TO-220AB package, which is widely preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The IRF540NPBF is designed for high voltage, high speed applications and is fully avalanche rated, making it a reliable choice for various power management needs.

Key Specifications

Parameter Value Unit
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 100 V
Drain-Source On Resistance-Max [Rds(on)] 44 mΩ
Rated Power Dissipation [Pd] 130 W
Gate Charge [Qg] 71 nC
Gate-Source Voltage-Max [Vgss] 20 V
Drain Current [Id] 33 A
Turn-on Delay Time 11 ns
Turn-off Delay Time 39 ns
Rise Time 35 ns
Fall Time 35 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold [Vgs(th)] 4 V
Technology Si
Height - Max 8.77 mm
Length 10.54 mm
Input Capacitance 1960 pF
Package Style TO-220-3 (TO-220AB)

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: With a maximum drain-source on-resistance of 44 mΩ.
  • Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage and current conditions.
  • 175°C Operating Temperature: Allows for operation in high-temperature environments.
  • Fast Switching: Features fast switching times with rise and fall times of 35 ns each.
  • Fully Avalanche Rated: Tested for 100% avalanche capability, ensuring reliability in demanding applications.
  • Lead-Free: Compliant with RoHS standards.

Applications

  • Switch Mode Power Supply (SMPS): Ideal for high-efficiency power supply designs.
  • Uninterruptible Power Supply (UPS): Suitable for backup power systems requiring high reliability.
  • Power Factor Correction (PFC): Used in PFC circuits to improve power factor and efficiency.
  • DC Motors and Inverters: Applicable in motor control and inverter systems due to its high current rating and fast switching capabilities.
  • Lighting and Load Switches: Can be used in various lighting applications and as load switches due to its robust design.
  • Battery Powered Applications: Suitable for battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRF540NPBF?

    The maximum drain-to-source voltage (Vdss) is 100 V.

  2. What is the maximum drain-source on-resistance (Rds(on)) of the IRF540NPBF?

    The maximum drain-source on-resistance (Rds(on)) is 44 mΩ.

  3. What is the rated power dissipation (Pd) of the IRF540NPBF?

    The rated power dissipation (Pd) is 130 W.

  4. What is the maximum gate-source voltage (Vgss) of the IRF540NPBF?

    The maximum gate-source voltage (Vgss) is 20 V.

  5. What is the maximum drain current (Id) of the IRF540NPBF?

    The maximum drain current (Id) is 33 A.

  6. What is the operating temperature range of the IRF540NPBF?

    The operating temperature range is -55°C to +175°C.

  7. Is the IRF540NPBF fully avalanche rated?

    Yes, the IRF540NPBF is 100% avalanche tested and fully avalanche rated.

  8. What package type does the IRF540NPBF come in?

    The IRF540NPBF comes in a TO-220AB package.

  9. What are some common applications of the IRF540NPBF?

    Common applications include switch mode power supplies, uninterruptible power supplies, power factor correction, DC motors, inverters, lighting, and load switches.

  10. Is the IRF540NPBF lead-free?

    Yes, the IRF540NPBF is lead-free and compliant with RoHS standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF540NPBF IRF540SPBF IRF540PBF IRF540ZPBF IRF540NSPBF IRF520NPBF IRF530NPBF IRF540NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 28A (Tc) 36A (Tc) 33A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 44mOhm @ 16A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 71 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 1960 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 92W (Tc) 130W (Tc) 48W (Tc) 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D²PAK (TO-263) TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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