IRF540NPBF
  • Share:

Infineon Technologies IRF540NPBF

Manufacturer No:
IRF540NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NPBF is a Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is packaged in a TO-220AB package, which is widely preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The IRF540NPBF is designed for high voltage, high speed applications and is fully avalanche rated, making it a reliable choice for various power management needs.

Key Specifications

Parameter Value Unit
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 100 V
Drain-Source On Resistance-Max [Rds(on)] 44
Rated Power Dissipation [Pd] 130 W
Gate Charge [Qg] 71 nC
Gate-Source Voltage-Max [Vgss] 20 V
Drain Current [Id] 33 A
Turn-on Delay Time 11 ns
Turn-off Delay Time 39 ns
Rise Time 35 ns
Fall Time 35 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold [Vgs(th)] 4 V
Technology Si
Height - Max 8.77 mm
Length 10.54 mm
Input Capacitance 1960 pF
Package Style TO-220-3 (TO-220AB)

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: With a maximum drain-source on-resistance of 44 mΩ.
  • Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage and current conditions.
  • 175°C Operating Temperature: Allows for operation in high-temperature environments.
  • Fast Switching: Features fast switching times with rise and fall times of 35 ns each.
  • Fully Avalanche Rated: Tested for 100% avalanche capability, ensuring reliability in demanding applications.
  • Lead-Free: Compliant with RoHS standards.

Applications

  • Switch Mode Power Supply (SMPS): Ideal for high-efficiency power supply designs.
  • Uninterruptible Power Supply (UPS): Suitable for backup power systems requiring high reliability.
  • Power Factor Correction (PFC): Used in PFC circuits to improve power factor and efficiency.
  • DC Motors and Inverters: Applicable in motor control and inverter systems due to its high current rating and fast switching capabilities.
  • Lighting and Load Switches: Can be used in various lighting applications and as load switches due to its robust design.
  • Battery Powered Applications: Suitable for battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRF540NPBF?

    The maximum drain-to-source voltage (Vdss) is 100 V.

  2. What is the maximum drain-source on-resistance (Rds(on)) of the IRF540NPBF?

    The maximum drain-source on-resistance (Rds(on)) is 44 mΩ.

  3. What is the rated power dissipation (Pd) of the IRF540NPBF?

    The rated power dissipation (Pd) is 130 W.

  4. What is the maximum gate-source voltage (Vgss) of the IRF540NPBF?

    The maximum gate-source voltage (Vgss) is 20 V.

  5. What is the maximum drain current (Id) of the IRF540NPBF?

    The maximum drain current (Id) is 33 A.

  6. What is the operating temperature range of the IRF540NPBF?

    The operating temperature range is -55°C to +175°C.

  7. Is the IRF540NPBF fully avalanche rated?

    Yes, the IRF540NPBF is 100% avalanche tested and fully avalanche rated.

  8. What package type does the IRF540NPBF come in?

    The IRF540NPBF comes in a TO-220AB package.

  9. What are some common applications of the IRF540NPBF?

    Common applications include switch mode power supplies, uninterruptible power supplies, power factor correction, DC motors, inverters, lighting, and load switches.

  10. Is the IRF540NPBF lead-free?

    Yes, the IRF540NPBF is lead-free and compliant with RoHS standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.34
570

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF540NPBF IRF540SPBF IRF540PBF IRF540ZPBF IRF540NSPBF IRF520NPBF IRF530NPBF IRF540NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 28A (Tc) 36A (Tc) 33A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 44mOhm @ 16A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 71 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 1960 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 92W (Tc) 130W (Tc) 48W (Tc) 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D²PAK (TO-263) TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
TLE6251DST
TLE6251DST
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS452RATMA1
BTS452RATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
S29GL128P90TFIR10
S29GL128P90TFIR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP