IRF540NSPBF
  • Share:

Infineon Technologies IRF540NSPBF

Manufacturer No:
IRF540NSPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSPBF is a N-Channel power MOSFET transistor produced by Infineon Technologies. It is designed for use in a wide range of power switching applications, leveraging advanced process technology to offer high performance and reliability. The device is housed in a rugged TO-220AB package and is RoHS3 compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

ParameterValue
Drain-to-Source Voltage (Vds)100V
Gate-to-Source Voltage (Vgs)±20V
Continuous Drain Current (Id)33A
Power Dissipation (Pd)130W
On-Resistance (Rds(on))44mΩ
Input Capacitance (Ciss)1960pF (max)
Gate Charge (Qg)71nC (max)
Operating Temperature (Tj)-55°C to 175°C
Package TypeTO-220AB

Key Features

  • High power handling capability with 33A continuous drain current and 130W power dissipation.
  • Low on-resistance of 44mΩ maximizes efficiency.
  • Wide operating temperature range of -55°C to 175°C.
  • Fast switching speed and low gate charge for high-frequency performance.
  • Robust design with protection against electrostatic discharge (ESD).
  • Planar cell structure for wide Safe Operating Area (SOA).
  • Industry standard through-hole power package for ease of design and drop-in replacement.

Applications

  • Switch-mode power supplies.
  • Motor drives.
  • Inverters.
  • Amplifiers.
  • Industrial and automotive electronics.
  • DC motors and lighting applications.
  • Battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF540NSPBF?
    The maximum drain-to-source voltage is 100V.
  2. What is the continuous drain current rating of the IRF540NSPBF?
    The continuous drain current rating is 33A.
  3. What is the on-resistance of the IRF540NSPBF?
    The on-resistance is 44mΩ.
  4. What is the operating temperature range of the IRF540NSPBF?
    The operating temperature range is -55°C to 175°C.
  5. Is the IRF540NSPBF RoHS compliant?
    Yes, the IRF540NSPBF is RoHS3 compliant.
  6. What type of package does the IRF540NSPBF come in?
    The IRF540NSPBF comes in a TO-220AB package.
  7. What are some common applications of the IRF540NSPBF?
    Common applications include switch-mode power supplies, motor drives, inverters, amplifiers, and industrial and automotive electronics.
  8. Does the IRF540NSPBF have any protection features?
    Yes, it has protection against electrostatic discharge (ESD).
  9. Is the IRF540NSPBF suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its fast switching speed and low gate charge.
  10. Is the IRF540NSPBF a mature product?
    Yes, the IRF540NSPBF is a mature and well-established product with no plans for discontinuation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
10

Please send RFQ , we will respond immediately.

Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSPBF IRF540SPBF IRF540ZSPBF IRF520NSPBF IRF530NSPBF IRF540NLPBF IRF540NPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) 130W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS 70-05 B5003
BAS 70-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAV 70S E6433
BAV 70S E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS21E6359HTMA1
BAS21E6359HTMA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC857SH6327
BC857SH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRF540NLPBF
IRF540NLPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO262
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
AUIR3313STRL
AUIR3313STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I