IRF540NSPBF
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Infineon Technologies IRF540NSPBF

Manufacturer No:
IRF540NSPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The IRF540NSPBF is a N-Channel power MOSFET transistor produced by Infineon Technologies. It is designed for use in a wide range of power switching applications, leveraging advanced process technology to offer high performance and reliability. The device is housed in a rugged TO-220AB package and is RoHS3 compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

ParameterValue
Drain-to-Source Voltage (Vds)100V
Gate-to-Source Voltage (Vgs)±20V
Continuous Drain Current (Id)33A
Power Dissipation (Pd)130W
On-Resistance (Rds(on))44mΩ
Input Capacitance (Ciss)1960pF (max)
Gate Charge (Qg)71nC (max)
Operating Temperature (Tj)-55°C to 175°C
Package TypeTO-220AB

Key Features

  • High power handling capability with 33A continuous drain current and 130W power dissipation.
  • Low on-resistance of 44mΩ maximizes efficiency.
  • Wide operating temperature range of -55°C to 175°C.
  • Fast switching speed and low gate charge for high-frequency performance.
  • Robust design with protection against electrostatic discharge (ESD).
  • Planar cell structure for wide Safe Operating Area (SOA).
  • Industry standard through-hole power package for ease of design and drop-in replacement.

Applications

  • Switch-mode power supplies.
  • Motor drives.
  • Inverters.
  • Amplifiers.
  • Industrial and automotive electronics.
  • DC motors and lighting applications.
  • Battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF540NSPBF?
    The maximum drain-to-source voltage is 100V.
  2. What is the continuous drain current rating of the IRF540NSPBF?
    The continuous drain current rating is 33A.
  3. What is the on-resistance of the IRF540NSPBF?
    The on-resistance is 44mΩ.
  4. What is the operating temperature range of the IRF540NSPBF?
    The operating temperature range is -55°C to 175°C.
  5. Is the IRF540NSPBF RoHS compliant?
    Yes, the IRF540NSPBF is RoHS3 compliant.
  6. What type of package does the IRF540NSPBF come in?
    The IRF540NSPBF comes in a TO-220AB package.
  7. What are some common applications of the IRF540NSPBF?
    Common applications include switch-mode power supplies, motor drives, inverters, amplifiers, and industrial and automotive electronics.
  8. Does the IRF540NSPBF have any protection features?
    Yes, it has protection against electrostatic discharge (ESD).
  9. Is the IRF540NSPBF suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its fast switching speed and low gate charge.
  10. Is the IRF540NSPBF a mature product?
    Yes, the IRF540NSPBF is a mature and well-established product with no plans for discontinuation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF540NSPBF IRF540SPBF IRF540ZSPBF IRF520NSPBF IRF530NSPBF IRF540NLPBF IRF540NPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) 130W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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