Infineon Technologies IRF540NSTRLPBF

Manufacturer No:: IRF540NSTRLPBF
Manufacturer:: Infineon Technologies
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:

Product Introduction

Overview

The IRF540NSTRLPBF is a high-performance N-channel MOSFET produced by Infineon Technologies. It is part of the HEXFET® Power MOSFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is designed for high-efficiency and reliability in various power management applications, offering fast switching speeds and a ruggedized device design.

Key Specifications

Parameter	Typical Value	Maximum Value	Units
Drain-to-Source Voltage (V_DSS)	-	100	V
Continuous Drain Current (I_D) at T_C = 25°C	-	33	A
Continuous Drain Current (I_D) at T_C = 100°C	-	23	A
Pulsed Drain Current (I_DM)	-	110	A
Power Dissipation (P_D) at T_C = 25°C	-	130	W
Gate-to-Source Voltage (V_GS)	-	±20	V
On-Resistance (R_DS(on)) at V_GS = 10V	44mΩ	-	Ω
Operating Junction Temperature (T_J)	-	-55 to +175	°C
Storage Temperature Range (T_STG)	-	-55 to +150	°C

Key Features

Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Ultra Low On-Resistance: Offers a low on-resistance of 44mΩ at V_GS = 10V.
Fast Switching: Known for fast switching speeds, making it suitable for high-frequency applications.
Fully Avalanche Rated: Ensures the device can withstand avalanche conditions.
High Operating Temperature: Can operate up to 175°C junction temperature.
Lead-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The IRF540NSTRLPBF is suitable for a wide variety of power management applications, including:

Power supplies and DC-DC converters.
Motor control and drive systems.
High-frequency switching applications.
Automotive systems requiring high reliability and efficiency.
Industrial power management systems.

Q & A

What is the maximum drain-to-source voltage (V_DSS) of the IRF540NSTRLPBF?
The maximum drain-to-source voltage is 100V.
What is the continuous drain current (I_D) at T_C = 25°C?
The continuous drain current at T_C = 25°C is 33A.
What is the on-resistance (R_DS(on)) at V_GS = 10V?
The on-resistance at V_GS = 10V is 44mΩ.
What is the operating junction temperature range of the IRF540NSTRLPBF?
The operating junction temperature range is -55 to +175°C.
Is the IRF540NSTRLPBF lead-free and RoHS compliant?
Yes, it is lead-free and RoHS compliant.
What is the maximum power dissipation (P_D) at T_C = 25°C?
The maximum power dissipation at T_C = 25°C is 130W.
What are some common applications of the IRF540NSTRLPBF?
Common applications include power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial power management systems.
What is the gate-to-source voltage (V_GS) range?
The gate-to-source voltage range is ±20V.
What is the storage temperature range (T_STG) of the IRF540NSTRLPBF?
The storage temperature range is -55 to +150°C.
Is the IRF540NSTRLPBF fully avalanche rated?
Yes, it is fully avalanche rated.

In Stock

UnitPrice: $1.74

Quantity: 55

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Part Number	IRF540NSTRLPBF	IRF540STRLPBF	IRF540NSTRRPBF	IRF540ZSTRLPBF	IRF520NSTRLPBF	IRF530NSTRLPBF
Manufacturer	Infineon Technologies	Vishay Siliconix	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Last Time Buy	Obsolete	Last Time Buy	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V	100 V	100 V	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)	28A (Tc)	33A (Tc)	36A (Tc)	9.7A (Tc)	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	44mOhm @ 16A, 10V	77mOhm @ 17A, 10V	44mOhm @ 16A, 10V	26.5mOhm @ 22A, 10V	200mOhm @ 5.7A, 10V	90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V	72 nC @ 10 V	71 nC @ 10 V	63 nC @ 10 V	25 nC @ 10 V	37 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1960 pF @ 25 V	1700 pF @ 25 V	1960 pF @ 25 V	1770 pF @ 25 V	330 pF @ 25 V	920 pF @ 25 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	130W (Tc)	3.7W (Ta), 150W (Tc)	130W (Tc)	92W (Tc)	3.8W (Ta), 48W (Tc)	3.8W (Ta), 70W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	D²PAK (TO-263)	D2PAK	PG-TO263-3	D2PAK	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Infineon Technologies IRF540NSTRLPBF

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

IRF540NSTRLPBF

IRF540NSTRRPBF

IRF540NSPBF

Similar Products

Related Product By Categories

BSN20BKR

AO3407A

SCTWA30N120

FDMS86520L

IRF3710PBF

STW20N95K5

BUK7Y2R0-40HX

STF3NK100Z

BSN20BK215

STD60N55F3

PH5030AL,115

STP24N65M2

Related Product By Brand

BAV199E6327HTSA1

BAV70UE6327HTSA1

BAS28E6359HTMA1

BCP54-16E6433

BCV26E327

BCV47E6433HTMA1

BC80740WE6327BTSA1

BCX5616E6433HTMA1

BSS138WH6433XTMA1

ITS716GFUMA1

XDPE12284C0000XUMA1

FM28V100-TG

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	71 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1960 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	130W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB