IRF540NSTRLPBF
  • Share:

Infineon Technologies IRF540NSTRLPBF

Manufacturer No:
IRF540NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRLPBF is a high-performance N-channel MOSFET produced by Infineon Technologies. It is part of the HEXFET® Power MOSFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is designed for high-efficiency and reliability in various power management applications, offering fast switching speeds and a ruggedized device design.

Key Specifications

ParameterTypical ValueMaximum ValueUnits
Drain-to-Source Voltage (VDSS)-100V
Continuous Drain Current (ID) at TC = 25°C-33A
Continuous Drain Current (ID) at TC = 100°C-23A
Pulsed Drain Current (IDM)-110A
Power Dissipation (PD) at TC = 25°C-130W
Gate-to-Source Voltage (VGS)-±20V
On-Resistance (RDS(on)) at VGS = 10V44mΩ-Ω
Operating Junction Temperature (TJ)--55 to +175°C
Storage Temperature Range (TSTG)--55 to +150°C

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a low on-resistance of 44mΩ at VGS = 10V.
  • Fast Switching: Known for fast switching speeds, making it suitable for high-frequency applications.
  • Fully Avalanche Rated: Ensures the device can withstand avalanche conditions.
  • High Operating Temperature: Can operate up to 175°C junction temperature.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The IRF540NSTRLPBF is suitable for a wide variety of power management applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the IRF540NSTRLPBF?
    The maximum drain-to-source voltage is 100V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current at TC = 25°C is 33A.
  3. What is the on-resistance (RDS(on)) at VGS = 10V?
    The on-resistance at VGS = 10V is 44mΩ.
  4. What is the operating junction temperature range of the IRF540NSTRLPBF?
    The operating junction temperature range is -55 to +175°C.
  5. Is the IRF540NSTRLPBF lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What is the maximum power dissipation (PD) at TC = 25°C?
    The maximum power dissipation at TC = 25°C is 130W.
  7. What are some common applications of the IRF540NSTRLPBF?
    Common applications include power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial power management systems.
  8. What is the gate-to-source voltage (VGS) range?
    The gate-to-source voltage range is ±20V.
  9. What is the storage temperature range (TSTG) of the IRF540NSTRLPBF?
    The storage temperature range is -55 to +150°C.
  10. Is the IRF540NSTRLPBF fully avalanche rated?
    Yes, it is fully avalanche rated.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.74
55

Please send RFQ , we will respond immediately.

Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSTRLPBF IRF540STRLPBF IRF540NSTRRPBF IRF540ZSTRLPBF IRF520NSTRLPBF IRF530NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Last Time Buy Obsolete Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 33A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 44mOhm @ 16A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 71 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1960 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 130W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK PG-TO263-3 D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC846SH6327XTSA1
BC846SH6327XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC817K-16WH6327
BC817K-16WH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
TLE6251DST
TLE6251DST
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5