IRF540NSTRLPBF
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Infineon Technologies IRF540NSTRLPBF

Manufacturer No:
IRF540NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRLPBF is a high-performance N-channel MOSFET produced by Infineon Technologies. It is part of the HEXFET® Power MOSFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is designed for high-efficiency and reliability in various power management applications, offering fast switching speeds and a ruggedized device design.

Key Specifications

ParameterTypical ValueMaximum ValueUnits
Drain-to-Source Voltage (VDSS)-100V
Continuous Drain Current (ID) at TC = 25°C-33A
Continuous Drain Current (ID) at TC = 100°C-23A
Pulsed Drain Current (IDM)-110A
Power Dissipation (PD) at TC = 25°C-130W
Gate-to-Source Voltage (VGS)-±20V
On-Resistance (RDS(on)) at VGS = 10V44mΩ-Ω
Operating Junction Temperature (TJ)--55 to +175°C
Storage Temperature Range (TSTG)--55 to +150°C

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a low on-resistance of 44mΩ at VGS = 10V.
  • Fast Switching: Known for fast switching speeds, making it suitable for high-frequency applications.
  • Fully Avalanche Rated: Ensures the device can withstand avalanche conditions.
  • High Operating Temperature: Can operate up to 175°C junction temperature.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The IRF540NSTRLPBF is suitable for a wide variety of power management applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the IRF540NSTRLPBF?
    The maximum drain-to-source voltage is 100V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current at TC = 25°C is 33A.
  3. What is the on-resistance (RDS(on)) at VGS = 10V?
    The on-resistance at VGS = 10V is 44mΩ.
  4. What is the operating junction temperature range of the IRF540NSTRLPBF?
    The operating junction temperature range is -55 to +175°C.
  5. Is the IRF540NSTRLPBF lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What is the maximum power dissipation (PD) at TC = 25°C?
    The maximum power dissipation at TC = 25°C is 130W.
  7. What are some common applications of the IRF540NSTRLPBF?
    Common applications include power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial power management systems.
  8. What is the gate-to-source voltage (VGS) range?
    The gate-to-source voltage range is ±20V.
  9. What is the storage temperature range (TSTG) of the IRF540NSTRLPBF?
    The storage temperature range is -55 to +150°C.
  10. Is the IRF540NSTRLPBF fully avalanche rated?
    Yes, it is fully avalanche rated.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRF540NSPBF
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Similar Products

Part Number IRF540NSTRLPBF IRF540STRLPBF IRF540NSTRRPBF IRF540ZSTRLPBF IRF520NSTRLPBF IRF530NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Last Time Buy Obsolete Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 33A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 44mOhm @ 16A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 71 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1960 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 130W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK PG-TO263-3 D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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