IRF540NSTRLPBF
  • Share:

Infineon Technologies IRF540NSTRLPBF

Manufacturer No:
IRF540NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRLPBF is a high-performance N-channel MOSFET produced by Infineon Technologies. It is part of the HEXFET® Power MOSFET family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is designed for high-efficiency and reliability in various power management applications, offering fast switching speeds and a ruggedized device design.

Key Specifications

ParameterTypical ValueMaximum ValueUnits
Drain-to-Source Voltage (VDSS)-100V
Continuous Drain Current (ID) at TC = 25°C-33A
Continuous Drain Current (ID) at TC = 100°C-23A
Pulsed Drain Current (IDM)-110A
Power Dissipation (PD) at TC = 25°C-130W
Gate-to-Source Voltage (VGS)-±20V
On-Resistance (RDS(on)) at VGS = 10V44mΩ-Ω
Operating Junction Temperature (TJ)--55 to +175°C
Storage Temperature Range (TSTG)--55 to +150°C

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a low on-resistance of 44mΩ at VGS = 10V.
  • Fast Switching: Known for fast switching speeds, making it suitable for high-frequency applications.
  • Fully Avalanche Rated: Ensures the device can withstand avalanche conditions.
  • High Operating Temperature: Can operate up to 175°C junction temperature.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The IRF540NSTRLPBF is suitable for a wide variety of power management applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the IRF540NSTRLPBF?
    The maximum drain-to-source voltage is 100V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current at TC = 25°C is 33A.
  3. What is the on-resistance (RDS(on)) at VGS = 10V?
    The on-resistance at VGS = 10V is 44mΩ.
  4. What is the operating junction temperature range of the IRF540NSTRLPBF?
    The operating junction temperature range is -55 to +175°C.
  5. Is the IRF540NSTRLPBF lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What is the maximum power dissipation (PD) at TC = 25°C?
    The maximum power dissipation at TC = 25°C is 130W.
  7. What are some common applications of the IRF540NSTRLPBF?
    Common applications include power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial power management systems.
  8. What is the gate-to-source voltage (VGS) range?
    The gate-to-source voltage range is ±20V.
  9. What is the storage temperature range (TSTG) of the IRF540NSTRLPBF?
    The storage temperature range is -55 to +150°C.
  10. Is the IRF540NSTRLPBF fully avalanche rated?
    Yes, it is fully avalanche rated.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.74
55

Please send RFQ , we will respond immediately.

Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSTRLPBF IRF540STRLPBF IRF540NSTRRPBF IRF540ZSTRLPBF IRF520NSTRLPBF IRF530NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Last Time Buy Obsolete Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 33A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 44mOhm @ 16A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 71 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1960 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 130W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK PG-TO263-3 D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

BC847BWE6327
BC847BWE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BCX52E6327HTSA1
BCX52E6327HTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRLML9301TRPBF
IRLML9301TRPBF
Infineon Technologies
MOSFET P-CH 30V 3.6A SOT23
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
TLE6209RAUMA2
TLE6209RAUMA2
Infineon Technologies
IC MOTOR DRIVER 4.75V-5.5V 20DSO