IRF540NSTRRPBF
  • Share:

Infineon Technologies IRF540NSTRRPBF

Manufacturer No:
IRF540NSTRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRRPBF is a 100V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is designed to support various applications such as DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications. The device is packaged in a TO-220AB package, which is widely accepted in the industry for its low thermal resistance and cost-effectiveness.

Key Specifications

Parameter Value
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 100V
Drain-Source On Resistance-Max 44mΩ
Rated Power Dissipation 130W
Gate Charge (Qg) 71nC
Gate-Source Voltage-Max (Vgss) 20V
Drain Current 33A
Turn-on Delay Time 11ns
Turn-off Delay Time 39ns
Rise Time 35ns
Fall Time 35ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4V
Technology Silicon (Si)
Height - Max 8.77mm
Length 10.54mm
Input Capacitance 1960pF
Package Style TO-220AB

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a maximum drain-source on-resistance of 44mΩ.
  • Dynamic dv/dt Rating: Suitable for applications requiring robust dv/dt performance.
  • Fast Switching: Features fast switching times with a turn-on delay of 11ns and a turn-off delay of 39ns.
  • Fully Avalanche Rated: Ensures reliability under avalanche conditions.
  • Lead-Free: Compliant with lead-free regulations.
  • Industry Standard Package: Packaged in a TO-220AB package, which is widely accepted for its low thermal resistance and cost-effectiveness.

Applications

The IRF540NSTRRPBF is versatile and can be used in a variety of applications, including:

  • DC Motors
  • Inverters
  • Switch-Mode Power Supplies (SMPS)
  • Lighting Systems
  • Load Switches
  • Battery-Powered Applications

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRF540NSTRRPBF?

    The maximum drain-to-source voltage (Vdss) is 100V.

  2. What is the maximum drain current of the IRF540NSTRRPBF?

    The maximum drain current is 33A.

  3. What is the typical on-resistance of the IRF540NSTRRPBF?

    The maximum drain-source on-resistance is 44mΩ.

  4. What is the operating temperature range of the IRF540NSTRRPBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type is the IRF540NSTRRPBF available in?

    The IRF540NSTRRPBF is available in a TO-220AB package.

  6. Is the IRF540NSTRRPBF lead-free?
  7. What are some common applications for the IRF540NSTRRPBF?
  8. What is the gate charge (Qg) of the IRF540NSTRRPBF?

    The gate charge (Qg) is 71nC.

  9. What is the turn-on delay time of the IRF540NSTRRPBF?

    The turn-on delay time is 11ns.

  10. Is the IRF540NSTRRPBF fully avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.75
296

Please send RFQ , we will respond immediately.

Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSTRRPBF IRF540STRRPBF IRF540ZSTRRPBF IRF520NSTRRPBF IRF530NSTRRPBF IRF540NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAT 54 B5003
BAT 54 B5003
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
BCX56-16E6433
BCX56-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847CWH6327XTSA1
BC847CWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC817K25WH6327XTSA1
BC817K25WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC857CB5003XT
BC857CB5003XT
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
SPP20N60C3XKSA1
SPP20N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
BTS5210LAUMA1
BTS5210LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
CY7C68013A-128AXC
CY7C68013A-128AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 128LQFP