IRF540NSTRRPBF
  • Share:

Infineon Technologies IRF540NSTRRPBF

Manufacturer No:
IRF540NSTRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRRPBF is a 100V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is designed to support various applications such as DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications. The device is packaged in a TO-220AB package, which is widely accepted in the industry for its low thermal resistance and cost-effectiveness.

Key Specifications

Parameter Value
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 100V
Drain-Source On Resistance-Max 44mΩ
Rated Power Dissipation 130W
Gate Charge (Qg) 71nC
Gate-Source Voltage-Max (Vgss) 20V
Drain Current 33A
Turn-on Delay Time 11ns
Turn-off Delay Time 39ns
Rise Time 35ns
Fall Time 35ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4V
Technology Silicon (Si)
Height - Max 8.77mm
Length 10.54mm
Input Capacitance 1960pF
Package Style TO-220AB

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a maximum drain-source on-resistance of 44mΩ.
  • Dynamic dv/dt Rating: Suitable for applications requiring robust dv/dt performance.
  • Fast Switching: Features fast switching times with a turn-on delay of 11ns and a turn-off delay of 39ns.
  • Fully Avalanche Rated: Ensures reliability under avalanche conditions.
  • Lead-Free: Compliant with lead-free regulations.
  • Industry Standard Package: Packaged in a TO-220AB package, which is widely accepted for its low thermal resistance and cost-effectiveness.

Applications

The IRF540NSTRRPBF is versatile and can be used in a variety of applications, including:

  • DC Motors
  • Inverters
  • Switch-Mode Power Supplies (SMPS)
  • Lighting Systems
  • Load Switches
  • Battery-Powered Applications

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRF540NSTRRPBF?

    The maximum drain-to-source voltage (Vdss) is 100V.

  2. What is the maximum drain current of the IRF540NSTRRPBF?

    The maximum drain current is 33A.

  3. What is the typical on-resistance of the IRF540NSTRRPBF?

    The maximum drain-source on-resistance is 44mΩ.

  4. What is the operating temperature range of the IRF540NSTRRPBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type is the IRF540NSTRRPBF available in?

    The IRF540NSTRRPBF is available in a TO-220AB package.

  6. Is the IRF540NSTRRPBF lead-free?
  7. What are some common applications for the IRF540NSTRRPBF?
  8. What is the gate charge (Qg) of the IRF540NSTRRPBF?

    The gate charge (Qg) is 71nC.

  9. What is the turn-on delay time of the IRF540NSTRRPBF?

    The turn-on delay time is 11ns.

  10. Is the IRF540NSTRRPBF fully avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.75
296

Please send RFQ , we will respond immediately.

Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSTRRPBF IRF540STRRPBF IRF540ZSTRRPBF IRF520NSTRRPBF IRF530NSTRRPBF IRF540NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAT54-05WH6327
BAT54-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV70WE6327BTSA1
BAV70WE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN