IRF540NSTRRPBF
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Infineon Technologies IRF540NSTRRPBF

Manufacturer No:
IRF540NSTRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NSTRRPBF is a 100V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is designed to support various applications such as DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications. The device is packaged in a TO-220AB package, which is widely accepted in the industry for its low thermal resistance and cost-effectiveness.

Key Specifications

Parameter Value
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 100V
Drain-Source On Resistance-Max 44mΩ
Rated Power Dissipation 130W
Gate Charge (Qg) 71nC
Gate-Source Voltage-Max (Vgss) 20V
Drain Current 33A
Turn-on Delay Time 11ns
Turn-off Delay Time 39ns
Rise Time 35ns
Fall Time 35ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4V
Technology Silicon (Si)
Height - Max 8.77mm
Length 10.54mm
Input Capacitance 1960pF
Package Style TO-220AB

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: Offers a maximum drain-source on-resistance of 44mΩ.
  • Dynamic dv/dt Rating: Suitable for applications requiring robust dv/dt performance.
  • Fast Switching: Features fast switching times with a turn-on delay of 11ns and a turn-off delay of 39ns.
  • Fully Avalanche Rated: Ensures reliability under avalanche conditions.
  • Lead-Free: Compliant with lead-free regulations.
  • Industry Standard Package: Packaged in a TO-220AB package, which is widely accepted for its low thermal resistance and cost-effectiveness.

Applications

The IRF540NSTRRPBF is versatile and can be used in a variety of applications, including:

  • DC Motors
  • Inverters
  • Switch-Mode Power Supplies (SMPS)
  • Lighting Systems
  • Load Switches
  • Battery-Powered Applications

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRF540NSTRRPBF?

    The maximum drain-to-source voltage (Vdss) is 100V.

  2. What is the maximum drain current of the IRF540NSTRRPBF?

    The maximum drain current is 33A.

  3. What is the typical on-resistance of the IRF540NSTRRPBF?

    The maximum drain-source on-resistance is 44mΩ.

  4. What is the operating temperature range of the IRF540NSTRRPBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type is the IRF540NSTRRPBF available in?

    The IRF540NSTRRPBF is available in a TO-220AB package.

  6. Is the IRF540NSTRRPBF lead-free?
  7. What are some common applications for the IRF540NSTRRPBF?
  8. What is the gate charge (Qg) of the IRF540NSTRRPBF?

    The gate charge (Qg) is 71nC.

  9. What is the turn-on delay time of the IRF540NSTRRPBF?

    The turn-on delay time is 11ns.

  10. Is the IRF540NSTRRPBF fully avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
IRF540NSTRLPBF
IRF540NSTRLPBF
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IRF540NSTRRPBF
IRF540NSTRRPBF
MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF
IRF540NSPBF
MOSFET N-CH 100V 33A D2PAK

Similar Products

Part Number IRF540NSTRRPBF IRF540STRRPBF IRF540ZSTRRPBF IRF520NSTRRPBF IRF530NSTRRPBF IRF540NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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