FDB12N50TM
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onsemi FDB12N50TM

Manufacturer No:
FDB12N50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 11.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB12N50TM is a high-performance N-channel MOSFET produced by onsemi. This device is packaged in the D2PAK format and is designed for high-power applications requiring efficient switching and minimal losses. The FDB12N50TM is known for its robust characteristics, making it suitable for a wide range of industrial, automotive, and consumer electronics applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)500 V
Id (Continuous Drain Current)11.5 A
Rds(on) (On-Resistance)0.55 Ω @ Vgs = 10 V, Id = 6 A
Pd (Power Dissipation)165 W
Vgs(th) (Gate Threshold Voltage)3 V @ Id = 250 μA
Idm (Pulse Drain Current)46 A

Key Features

  • High voltage rating of 500 V, making it suitable for high-power applications.
  • Low on-resistance of 0.55 Ω, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 11.5 A and pulse drain current of 46 A.
  • High power dissipation of 165 W, ensuring reliable operation in demanding environments.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The FDB12N50TM is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems such as electric vehicles and hybrid vehicles.
  • Industrial control and automation.
  • Consumer electronics requiring high-power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDB12N50TM?
    The maximum drain-source voltage is 500 V.
  2. What is the continuous drain current of the FDB12N50TM?
    The continuous drain current is 11.5 A.
  3. What is the on-resistance of the FDB12N50TM at Vgs = 10 V and Id = 6 A?
    The on-resistance is 0.55 Ω.
  4. What is the power dissipation of the FDB12N50TM?
    The power dissipation is 165 W.
  5. Is the FDB12N50TM ROHS compliant?
    Yes, the FDB12N50TM is ROHS compliant.
  6. What is the gate threshold voltage of the FDB12N50TM?
    The gate threshold voltage is 3 V at Id = 250 μA.
  7. What is the pulse drain current of the FDB12N50TM?
    The pulse drain current is 46 A.
  8. In what package is the FDB12N50TM available?
    The FDB12N50TM is available in the D2PAK package.
  9. What are some common applications of the FDB12N50TM?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  10. Where can I find detailed specifications for the FDB12N50TM?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, LCSC, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):165W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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