FDB12N50TM
  • Share:

onsemi FDB12N50TM

Manufacturer No:
FDB12N50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 11.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB12N50TM is a high-performance N-channel MOSFET produced by onsemi. This device is packaged in the D2PAK format and is designed for high-power applications requiring efficient switching and minimal losses. The FDB12N50TM is known for its robust characteristics, making it suitable for a wide range of industrial, automotive, and consumer electronics applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)500 V
Id (Continuous Drain Current)11.5 A
Rds(on) (On-Resistance)0.55 Ω @ Vgs = 10 V, Id = 6 A
Pd (Power Dissipation)165 W
Vgs(th) (Gate Threshold Voltage)3 V @ Id = 250 μA
Idm (Pulse Drain Current)46 A

Key Features

  • High voltage rating of 500 V, making it suitable for high-power applications.
  • Low on-resistance of 0.55 Ω, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 11.5 A and pulse drain current of 46 A.
  • High power dissipation of 165 W, ensuring reliable operation in demanding environments.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The FDB12N50TM is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems such as electric vehicles and hybrid vehicles.
  • Industrial control and automation.
  • Consumer electronics requiring high-power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDB12N50TM?
    The maximum drain-source voltage is 500 V.
  2. What is the continuous drain current of the FDB12N50TM?
    The continuous drain current is 11.5 A.
  3. What is the on-resistance of the FDB12N50TM at Vgs = 10 V and Id = 6 A?
    The on-resistance is 0.55 Ω.
  4. What is the power dissipation of the FDB12N50TM?
    The power dissipation is 165 W.
  5. Is the FDB12N50TM ROHS compliant?
    Yes, the FDB12N50TM is ROHS compliant.
  6. What is the gate threshold voltage of the FDB12N50TM?
    The gate threshold voltage is 3 V at Id = 250 μA.
  7. What is the pulse drain current of the FDB12N50TM?
    The pulse drain current is 46 A.
  8. In what package is the FDB12N50TM available?
    The FDB12N50TM is available in the D2PAK package.
  9. What are some common applications of the FDB12N50TM?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  10. Where can I find detailed specifications for the FDB12N50TM?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, LCSC, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):165W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.92
427

Please send RFQ , we will respond immediately.

Related Product By Categories

FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT