MMBT6429LT1G
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onsemi MMBT6429LT1G

Manufacturer No:
MMBT6429LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT6429LT1G is an NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose amplifier applications and is known for its reliability and performance in various electronic circuits. It is packaged in a SOT-23 (TO-236) case, making it suitable for surface-mount technology (SMT) assembly.

Key Specifications

ParameterValue
Transistor PolarityNPN
Collector-Emitter Voltage (VCEO) Max45 V
Collector-Base Voltage (VCBO)55 V
Maximum DC Collector Current200 mA
Power Dissipation225 mW
Package TypeSOT-23 (TO-236)

Key Features

  • NPN bipolar junction transistor suitable for general-purpose amplifier applications.
  • High collector-emitter voltage (VCEO) of 45 V and collector-base voltage (VCBO) of 55 V.
  • Maximum DC collector current of 200 mA.
  • Low power dissipation of 225 mW.
  • SOT-23 (TO-236) package for surface-mount technology.
  • ROHS compliant.

Applications

The MMBT6429LT1G is versatile and can be used in a variety of applications, including:

  • General-purpose amplifiers.
  • Switching circuits.
  • Audio amplifiers.
  • Automotive and industrial control systems.
  • Consumer electronics.

Q & A

  1. What is the transistor polarity of the MMBT6429LT1G?
    The transistor polarity of the MMBT6429LT1G is NPN.
  2. What is the maximum collector-emitter voltage (VCEO) of the MMBT6429LT1G?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  3. What is the maximum DC collector current of the MMBT6429LT1G?
    The maximum DC collector current is 200 mA.
  4. What is the power dissipation of the MMBT6429LT1G?
    The power dissipation is 225 mW.
  5. What package type is the MMBT6429LT1G available in?
    The MMBT6429LT1G is available in a SOT-23 (TO-236) package.
  6. Is the MMBT6429LT1G ROHS compliant?
    Yes, the MMBT6429LT1G is ROHS compliant.
  7. What are some common applications of the MMBT6429LT1G?
    The MMBT6429LT1G is commonly used in general-purpose amplifiers, switching circuits, audio amplifiers, automotive and industrial control systems, and consumer electronics.
  8. Where can I find detailed specifications for the MMBT6429LT1G?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser, Newark, and Octopart.
  9. What is the collector-base voltage (VCBO) of the MMBT6429LT1G?
    The collector-base voltage (VCBO) is 55 V.
  10. Is the MMBT6429LT1G suitable for surface-mount technology (SMT)?
    Yes, the MMBT6429LT1G is suitable for surface-mount technology (SMT) due to its SOT-23 (TO-236) package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 100µA, 5V
Power - Max:225 mW
Frequency - Transition:700MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
MMBT6428LT1G
MMBT6428LT1G
TRANS NPN 50V 0.2A SOT23-3
NSVMMBT6429LT1G
NSVMMBT6429LT1G
TRANS NPN 45V 0.2A SOT23-3
MMBT6429LT1
MMBT6429LT1
TRANS SS NPN 45V LN SOT23

Similar Products

Part Number MMBT6429LT1G MMBT6427LT1G MMBT6428LT1G MMBT6429LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN - Darlington NPN NPN
Current - Collector (Ic) (Max) 200 mA 500 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 40 V 50 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 1.5V @ 500µA, 500mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 1µA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100µA, 5V 20000 @ 100mA, 5V 250 @ 100µA, 5V 500 @ 100µA, 5V
Power - Max 225 mW 225 mW 225 mW 225 mW
Frequency - Transition 700MHz - 700MHz 700MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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