Overview
The MMBT6428LT1G is an NPN silicon amplifier transistor produced by onsemi. This device is designed for general-purpose amplification and switching applications. It is part of the MMBT6428 and MMBT6429 series, which are known for their high current gain and low noise characteristics. The MMBT6428LT1G is packaged in a SOT-23 (TO-236) case, making it suitable for a wide range of electronic circuits where space is a concern.
Key Specifications
| Rating | Symbol | MMBT6428LT1G | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) | hFE | 250 - 500 | |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) | VCE(sat) | 0.2 - 0.6 | Vdc |
| Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) | VBE(on) | 0.56 - 0.66 | Vdc |
Key Features
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- High Current Gain: Offers a DC current gain (hFE) of 250 to 500, making it suitable for amplification tasks.
- Low Noise Characteristics: Features low noise voltage and current, ideal for applications requiring minimal noise interference.
- Compact SOT-23 Package: Ideal for space-constrained designs.
Applications
- General-Purpose Amplification: Suitable for a variety of amplification tasks in electronic circuits.
- Switching Applications: Can be used in switching circuits due to its high current gain and low saturation voltage.
- Automotive Electronics: Qualified for automotive use with AEC-Q101 certification.
- Consumer Electronics: Used in various consumer electronic devices where compact size and high performance are required.
Q & A
- What is the maximum collector-emitter voltage for the MMBT6428LT1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc. - What is the package type of the MMBT6428LT1G?
The device is packaged in a SOT-23 (TO-236) case. - Is the MMBT6428LT1G RoHS compliant?
Yes, the MMBT6428LT1G is Pb-Free, Halogen Free/BFR Free and RoHS compliant. - What is the typical DC current gain (hFE) of the MMBT6428LT1G?
The typical DC current gain (hFE) ranges from 250 to 500. - What are the junction and storage temperature ranges for the MMBT6428LT1G?
The junction and storage temperature ranges are -55°C to +150°C. - Is the MMBT6428LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the collector-emitter saturation voltage for the MMBT6428LT1G?
The collector-emitter saturation voltage (VCE(sat)) is between 0.2 and 0.6 Vdc. - What is the base-emitter on voltage for the MMBT6428LT1G?
The base-emitter on voltage (VBE(on)) is between 0.56 and 0.66 Vdc. - What is the thermal resistance, junction-to-ambient for the MMBT6428LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W. - What is the total device dissipation for the MMBT6428LT1G on an FR-5 board at 25°C?
The total device dissipation (PD) is 225 mW.
